Techniques of using a Transmission Charged Particle Microscope for diffraction pattern detection are disclosed. An example method including irradiating at least a portion of a specimen with a charged particle beam, using an imaging system to collect charged particles that traverse the specimen during said irradiation, and to direct them onto a detector configured to operate in a particle counting mode, using said detector to record a diffraction pattern of said irradiated portion of the specimen, recording said diffraction pattern iteratively in a series of successive detection frames, and during recording of each frame, using a scanning assembly for causing relative motion of said diffraction pattern and said detector, so as to cause each local intensity maximum in said pattern to trace out a locus on said detector.

Techniques for adapting an adaptive specimen image acquisition system using an artificial neural network (ANN) are disclosed. An adaptive specimen image acquisition system is configurable to scan a specimen to produce images of varying qualities. An adaptive specimen image acquisition system first scans a specimen to produce a low-quality image. An ANN identifies objects of interest within the specimen image. A scan mask indicates regions of the image corresponding to the objects of interest. The adaptive specimen image acquisition system scans only the regions of the image corresponding to the objects of interest, as indicated by the scan mask, to produce a high-quality image. The low-quality image and the high-quality image are merged in a final image. The final image shows the objects of interest at a higher quality, and the rest of the specimen at a lower quality.

The purpose of the present invention is to provide a scintillator for a charged particle beam device and a charged particle beam device which achieve both an increase in emission intensity and a reduction in afterglow intensity. This scintillator for a charged particle beam device is characterized by comprising a substrate (13), a buffer layer (14) formed on a surface of the substrate (13), a stack (12) of a light emitting layer (15) and a barrier layer (16) formed on a surface of the buffer layer (14), and a conductive layer (17) formed on a surface of the stack (12) and by being configured such that the light emitting layer (15) contains InGaN, the barrier layer (16) contains GaN, and the ratio b/a of the thickness b of the barrier layer (16) to the thickness a of the light emitting layer (15) is 11 to 25.

The objective of the present invention is to provide a charged particle beam device for setting, from an image of a trench-like groove or a pit, device conditions for finding a hole or the like provided in the trench or the pit, or measuring a hole or the like provided inside the trench or the like with high accuracy. In the present invention, a charged particle beam device comprises: a deflector for causing a charged particle beam emitted from a charged particle source to perform a scan; a detector for detecting a charged particle obtained on the basis of the scanning of the charged particle beam; and a computation processing device for generating an image on the basis of the output of the detector. In the charged particle beam device, the computation processing device specifies, from within the generated image, a relatively dark region with respect to other parts thereof, and controls the deflector in such a manner that the charged particle beam selectively scans a sample position corresponding to the dark region.

A wafer inspection system is disclosed. According to certain embodiments, the system includes an electron detector that includes circuitry to detect secondary electrons or backscattered electrons (SE/B SE) emitted from a wafer. The electron beam system also includes a current detector that includes circuitry to detect an electron-beam-induced current (EBIC) from the wafer. The electron beam system further includes a controller having one or more processors and a memory, the controller including circuitry to: acquire data regarding the SE/BSE; acquire data regarding the EBIC; and determine structural information of the wafer based on an evaluation of the SE/BSE data and the EBIC data.

There is provided a method of image acquisition capable of reducing the effects of diffraction contrast. This method of image acquisition is implemented in an electron microscope for generating electron microscope images with electrons transmitted through a sample. The method starts with obtaining the plural electron microscope images while causing relative variations in the direction of incidence of an electron beam with respect to the sample. An image is generated by accumulating the plural electron microscope images.

Techniques for adapting an adaptive specimen image acquisition system using an artificial neural network (ANN) are disclosed. An adaptive specimen image acquisition system is configurable to scan a specimen to produce images of varying qualities. An adaptive specimen image acquisition system first scans a specimen to produce a low-quality image. An ANN identifies objects of interest within the specimen image. A scan mask indicates regions of the image corresponding to the objects of interest. The adaptive specimen image acquisition system scans only the regions of the image corresponding to the objects of interest, as indicated by the scan mask, to produce a high-quality image. The low-quality image and the high-quality image are merged in a final image. The final image shows the objects of interest at a higher quality, and the rest of the specimen at a lower quality.

A method for chemical identification of a sample having nanostructures includes the steps of irradiating the surface at wavelengths for each of a first and a second of the nanostructures that are uniquely absorbed by each of the first nanostructure and the second nanostructure such that each is excited to modulate at a first or a second nanostructure frequency, respectively. The method continues with the steps of irradiating the surface with electron beams incident on each of the first and second nanostructure, wherein at least one of secondary electrons, backscattered electrons and transmitted electrons are modulated at the frequency corresponding to each of the first and second nanostructure frequencies. A chemical map of the sample at an atomic scale is then created. A microscope is provided to carry out the method.

The present invention relates to an image generation method for an objective for generating an image corresponding to a multi-frame image from image signals obtained by scanning a small number of frames are proposed. To achieve the above objective, there is proposed a method of performing two-dimensionally scanning on an object on a sample with a beam a plurality of times, generating a first image by integrating image signals obtained by a plurality of times of scanning at a first timing among the image signals generated based on the plurality of times of the two-dimensional scanning (S103), generating a second image based on the smaller number of times of scanning than the number of times of scanning at the first timing including scanning after the first timing (S105), training a learning device by using teacher data with the second image as an input and the first image as an output (S108), and inputting input image signals obtained by the smaller number of times of scanning than the number of times of scanning at the first timing to the trained learning device to output an estimated image.

Aspects of the present disclosure involve a data capturing and processing system that intentionally captures data and/or data sets with missing pieces of information. The data and/or datasets may include various types of data, such as one-dimensional signals, two-dimensional images (or other images), and/or three-dimensional structures. The captured data is processed to restore missing information into the data and/or data sets, thereby enabling simultaneous pattern recognition and image recovery.