An electron beam apparatus including: an electron beam source configured to generate an electron beam; a beam conversion unit including an aperture array configured to generate a plurality of beamlets from the electron beam, and a deflector unit configured to deflect one or more groups of the plurality of beamlets; and a projection system configured to project the plurality of beamlets onto an object, wherein the deflector unit is configured to deflect the one or more groups of the plurality of beamlets to impinge on the object at different angles of incidence, each beamlet in a group having substantially the same angle of incidence on the object.

A measuring apparatus that irradiates a sample with a charged particle beam to observe the sample includes a particle source that outputs the charged particle beam, a lens that collects the charged particle beam, a detector that detects a signal of emitted electrons emitted from the sample which is irradiated with the charged particle beam, and a control device that controls the output of the charged particle beam and the detection of the signal of the emitted electrons in accordance with an observation condition, in which the control device sets, as the observation condition, a first parameter for controlling an irradiation cycle of the charged particle beam, a second parameter for controlling a pulse width of the pulsed charged particle beam, and a third parameter for controlling detection timing of the signal of the emitted electron within the irradiation time of the pulsed charged particle beam, and the third parameter is determined in accordance with a difference in intensity of signals of the plurality of the emitted electrons emitted from the irradiation position of the charged particle beam.

This charged particle beam device is provided with: a plurality of detectors for detecting secondary particles, the detectors being disposed in a symmetrical manner around the optical axis of a primary charged particle beam closer to the charged particle source side than an objective lens; electrodes for forming an electric field oriented in directions corresponding to each of the plurality of detectors, the electrodes being provided on the travel routes of secondary particles from a sample to the detectors; and a control power supply for applying a voltage to the electrodes. Adjusting the voltage applied to each of the electrodes makes it possible to detect, upon deflecting, the secondary particles, and to control the range of azimuths of the secondary particles to be detected.

Techniques of using a Transmission Charged Particle Microscope for diffraction pattern detection are disclosed. An example method including irradiating at least a portion of a specimen with a charged particle beam, using an imaging system to collect charged particles that traverse the specimen during said irradiation, and to direct them onto a detector configured to operate in a particle counting mode, using said detector to record a diffraction pattern of said irradiated portion of the specimen, recording said diffraction pattern iteratively in a series of successive detection frames, and during recording of each frame, using a scanning assembly for causing relative motion of said diffraction pattern and said detector, so as to cause each local intensity maximum in said pattern to trace out a locus on said detector.

Techniques for adapting an adaptive specimen image acquisition system using an artificial neural network (ANN) are disclosed. An adaptive specimen image acquisition system is configurable to scan a specimen to produce images of varying qualities. An adaptive specimen image acquisition system first scans a specimen to produce a low-quality image. An ANN identifies objects of interest within the specimen image. A scan mask indicates regions of the image corresponding to the objects of interest. The adaptive specimen image acquisition system scans only the regions of the image corresponding to the objects of interest, as indicated by the scan mask, to produce a high-quality image. The low-quality image and the high-quality image are merged in a final image. The final image shows the objects of interest at a higher quality, and the rest of the specimen at a lower quality.

The invention relates to a device for examining and/or processing an element for photolithography with a beam of charged particles, wherein the device comprises: (a) means for acquiring measurement data while the element for photolithography is exposed to the beam of charged particles; and (b) means for predetermining a drift of the beam of charged particles relative to the element for photolithography with a trained machine learning model and/or a predictive filter, wherein the trained machine learning model and/or the predictive filter use(s) at least the measurement data as input data.

A device may include an electron source, a detector, and a deflector. The electron source may be directed toward a sample area. The detector may receive an electron signal or an electron-induced signal. A deflector may be positioned between the electron source and the sample. The deflector may modulate an intensity of the electron source directed to the sample area according to an electron dose waveform having a continuously variable temporal profile.

There is provided a method of image acquisition capable of reducing the effects of diffraction contrast. This method of image acquisition is implemented in an electron microscope for generating electron microscope images with electrons transmitted through a sample. The method starts with obtaining the plural electron microscope images while causing relative variations in the direction of incidence of an electron beam with respect to the sample. An image is generated by accumulating the plural electron microscope images.

Techniques for adapting an adaptive specimen image acquisition system using an artificial neural network (ANN) are disclosed. An adaptive specimen image acquisition system is configurable to scan a specimen to produce images of varying qualities. An adaptive specimen image acquisition system first scans a specimen to produce a low-quality image. An ANN identifies objects of interest within the specimen image. A scan mask indicates regions of the image corresponding to the objects of interest. The adaptive specimen image acquisition system scans only the regions of the image corresponding to the objects of interest, as indicated by the scan mask, to produce a high-quality image. The low-quality image and the high-quality image are merged in a final image. The final image shows the objects of interest at a higher quality, and the rest of the specimen at a lower quality.

A wafer topography measurement system can be paired with a scanning electron microscope. A topography threshold can be applied to wafer topography data about the wafer, which was obtained with the wafer topography measurement system. A metrology sampling plan can be generated for the wafer. This metrology sampling plan can include locations in the wafer topography data above the topography threshold. The scanning electron microscope can scan the wafer using the metrology sampling plan and identify defects.