A method for implementing a scanning electron microscopy characterisation technique for the determination of at least one critical dimension of the structure of a sample in the field of dimensional metrology, known as CD-SEM technique, the method including producing an experimental image representative of the structure of the sample and derived from a scanning electron microscope, from a first theoretical model based on parametric mathematical functions, calculating a second theoretical model obtained by algebraic summation of a corrective term, the corrective term being the convolution product between a given convolution kernel and the first theoretical model, the second theoretical model comprising a set of parameters to determine, and determining the set of parameters present in the second theoretical model by means of an adjustment between the second theoretical model and the experimental image.

There is provided a method of aberration measurement capable of reducing the effects of image drift. The novel method of aberration measurement is for use in an electron microscope. The method comprises the steps of: acquiring a first image that is a TEM (transmission electron microscope) image of a sample; scanning the illumination angle of an electron beam impinging on the sample and acquiring a second image by multiple exposure of a plurality of TEM images generated at different illumination angles; and calculating aberrations from the first and second images.

To provide a charged particle beam device which enables observation and evaluation of the surface and the inside of a sample with low damage to the sample, the charged particle beam device has: a charged particle beam source 2; a sample table 9 in which the sample 210 is placed; a charged particle beam optical system which pulsates a charged particle beam 100 and irradiates the charged particle beam to the sample at an acceleration voltage within a range of 0 kV to 5 kV; a split distance selector 125 for selecting a measurement object of the sample; and a split distance setting unit 124 for setting a split distance in one line scanning of the charged particle beam on the sample.

A charged particle beam device capable of removing a foreign matter adhered to an electric field-correcting electrode arranged in an outer peripheral portion of a measurement sample is provided. The invention is directed to a charged particle beam device including a sample stage provided with the measurement sample and an electric field-correcting electrode correcting an electric field in the vicinity of the outer peripheral portion of the measurement sample and in which the measurement sample is measured by being irradiated with a charged particle beam, wherein a foreign-matter removal control unit controls a power source connected to the electric field-correcting electrode such that an absolute value of a voltage to be applied to the electric field-correcting electrode is equal to or more than an absolute value of a voltage to be applied to the electric field-correcting electrode when the measurement sample is measured.

A device for observing a specimen, such as a charged particle beam device exemplified by a scanning electron microscope and a transmission electron microscope in which an operator can specify minute bubbles with high contrast in a charged particle beam image of a liquid subjected to processing of generating bubbles, using a phenomenon in which contrast as high as an operator can specify minute bubbles is provided in a charged particle beam image of a specimen including an ionic liquid and a liquid subjected to processing of generating bubbles, thus making it possible to recognize minute bubbles in a liquid.

There is provided a crystal orientation figure creating device for use in a charged particle beam device for making a charged particle beam irradiated to a surface of a sample, the crystal orientation figure creating device being configured to create a crystal orientation figure, which is a figure representing a crystal coordinate system of a crystal at a position selected on the surface with respect to an incident direction of the charged particle beam, the crystal orientation figure creating device including: an orientation information acquiring unit configured to acquire crystal orientation information with respect to the incident direction at the selected position; an incident direction information acquiring unit configured to acquire information relating to an incident direction of the charged particle beam with respect to the sample; and a crystal orientation figure creating unit configured to create a crystal orientation figure in a changed incident direction at the selected position, based on the crystal orientation information acquired by the orientation information acquiring unit, and the information relating to the incident direction at the time when the crystal orientation information is acquired and the information relating to the changed incident direction, acquired by the incident direction information acquiring unit.

This charged particle beam device is provided with: a plurality of detectors for detecting secondary particles, the detectors being disposed in a symmetrical manner around the optical axis of a primary charged particle beam closer to the charged particle source side than an objective lens; electrodes for forming an electric field oriented in directions corresponding to each of the plurality of detectors, the electrodes being provided on the travel routes of secondary particles from a sample to the detectors; and a control power supply for applying a voltage to the electrodes. Adjusting the voltage applied to each of the electrodes makes it possible to detect, upon deflecting, the secondary particles, and to control the range of azimuths of the secondary particles to be detected.

This charged particle beam device is provided with: a plurality of detectors for detecting secondary particles, the detectors being disposed in a symmetrical manner around the optical axis of a primary charged particle beam closer to the charged particle source side than an objective lens; electrodes for forming an electric field oriented in directions corresponding to each of the plurality of detectors, the electrodes being provided on the travel routes of secondary particles from a sample to the detectors; and a control power supply for applying a voltage to the electrodes. Adjusting the voltage applied to each of the electrodes makes it possible to detect, upon deflecting, the secondary particles, and to control the range of azimuths of the secondary particles to be detected.

A heat map of probable defects in an image can be represented as a matrix of defect probability index corresponding to each pixel. The image may be generated from data received from a detector of a scanning electron microscope or other inspection tools. A number of pixels in the image that exceed a corresponding threshold in the matrix can be quantified.

A heat map of probable defects in an image can be represented as a matrix of defect probability index corresponding to each pixel. The image may be generated from data received from a detector of a scanning electron microscope or other inspection tools. A number of pixels in the image that exceed a corresponding threshold in the matrix can be quantified.