A computing unit generates a to-be-used-in-computation netlist on the basis of a to-be-used-in-calculation device model corresponding to a correction sample, estimates a first application result, on the basis of the to-be-used-in-computation netlist and an optical condition, when a charged particle beam is applied to the correction sample under the optical condition, compares the first application result and a second application result based on a detection signal when the charged particle beam is applied to the correction sample under the optical condition, and corrects the optical condition when the first application result and the second application result differ from each other.

A rapid and automatic virus imaging and analysis system includes (i) electron optical sub-systems (EOSs), each of which has a large field of view (FOV) and is capable of instant magnification switching for rapidly scanning a virus sample; (ii) sample management sub-systems (SMSs), each of which automatically loads virus samples into one of the EOSs for virus sample scanning and then unloads the virus samples from the EOS after the virus sample scanning is completed; (iii) virus detection and classification sub-systems (VDCSs), each of which automatically detects and classifies a virus based on images from the EOS virus sample scanning; and (iv) a cloud-based collaboration sub-system for analyzing the virus sample scanning images, storing images from the EOS virus sample scanning, and storing and analyzing machine data associated with the EOSs, the SMSs, and the VDCSs.

Disclosed are articles comprising substrate and graphene coating that are configured to support a sample for electron or optical microscopy. Also disclosed are methods of making the same and methods of using the same in imaging technology.

Sample preparation system and method which enable electron microscope observation of a sample slice with simple structure and process are provided. The sample preparation system includes at least one of a plasma treatment apparatus and a sputtering apparatus, as well as a slice collecting apparatus. The plasma treatment apparatus is configured to feed a resin tape in a plasma irradiation area to irradiate the resin tape with plasma, thereby continuously hydrophilizing the resin tape. The sputtering apparatus is configured to feed the resin tape in a sputtering area to continuously perform sputtering on the resin tape, thereby imparting conductivity to the resin tape. The slice collecting apparatus is configured to serially collect slices cut out from a sample onto the resin tape having been subjected to plasma treatment or sputtering.

An image forming method includes: arranging a sample between a first main surface of an insulating thin film and a counter electrode, measuring an impedance value by inputting an AC potential signal to the counter electrode, scanning a physical beam while focusing and irradiating a conductive thin film given to cover a second main surface of the insulating thin film with the physical beam to lower an insulation property of the insulating thin film directly below an irradiation position, guiding the AC potential signal to the irradiation position, and forming an image from the impedance value corresponding to the irradiation position.

A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EU mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.

A method for measuring critical dimension is provided. The method includes the steps of: receiving a critical-dimension scanning electron microscopy (CD-SEM) image of a semiconductor wafer; performing an image-sharpening process and an image de-noise process on the CD-SEM image to generate a first image; performing an edge detection process on the first image to generate a second image; performing a connected-component labeling process on the second image to generate an output image; and calculating a critical-dimension information table of the semiconductor wafer according to the output image.

The present disclosure relates to a detection system, and, more particularly, to system for detection of passive voltage contrast and methods of use. The system includes a chamber; a stage provided within the chamber, configured to stage a target structure; an electron beam apparatus which is structured to emit an e-beam toward the stage; and a laser source which emits a laser signal toward the stage, at a same area as the e-beam.

A system for ultra-high temperature in-situ fretting fatigue experiment, includes a heat preservation cover defining a, a heating device arranged in the mounting space, a first test sample, a second test sample, and a clamping device arranged in the mounting space. The first test sample and the second test sample are arranged at an upper end of the heating device along a horizontal direction. A mortise is formed at an end of the first test sample facing towards the second test sample. A tenon mating with the mortise is formed at an end of the second test sample facing towards the first test sample. The clamping device is configured to be clamped at two ends of the mated first test sample and second test sample and to apply a periodically reciprocating loading along a length direction of the first test sample and the second test sample.

Systems and methods of forming images of a sample using a multi-beam apparatus are disclosed. The method may include generating a plurality of secondary electron beams from a plurality of probe spots on the sample upon interaction with a plurality of primary electron beams. The method may further include adjusting an orientation of the plurality of primary electron beams interacting with the sample, directing the plurality of secondary electron beams away from the plurality of primary electron beams, compensating astigmatism aberrations of the plurality of directed secondary electron beams, focusing the plurality of directed secondary electron beams onto a focus plane, detecting the plurality of focused secondary electron beams by a charged-particle detector, and positioning a detection plane of the charged-particle detector at or close to the focus plane.