A magnetic media disk is fabricated by depositing magnetic layers over the disk, then depositing protective later over the magnetic layer, and then performing ion implant process to implant ions into the protective coating. A system for performing the ion implant of the magnetic media disk includes two ion implant chambers. During operation one chamber performs ion implant and one chamber performs chamber cleaning by maintaining inside a plasma of cleaning gas without a disk present inside the chamber.

An apparatus includes a beam scanner applying, during a non-uniform scanning mode, a plurality of different waveforms generating a scan of an ion beam along a scan direction, wherein a given waveform comprises a plurality of scan segments, wherein a first scan segment comprises a first scan rate and a second scan segment comprises a second scan rate different from the first scan rate; a current detector intercepting the ion beam outside of a substrate region and recording a measured integrated current of the ion beam for a given waveform; and a scan adjustment component coupled to the beam scanner and comprising logic to determine: when a beam width of the ion beam along the scan direction exceeds a threshold; and a plurality of current ratios based on the measured integrated current of the ion beam for at least two different waveforms of the plurality of waveforms.

A beam current density distribution adjustment device is provided. The device includes member pairs in a long side direction of a ribbon beam, the member pairs adjusting a beam current density distribution in the long side direction of the ribbon beam by using an electric field or a magnetic field, members of each of the member pairs being disposed with the ribbon beam in-between the members. Opposing surfaces of the member pairs adjacent to each other in the long side direction of the ribbon beam are partially not parallel to a traveling direction of the ribbon beam.

A mass analyzing electromagnet is provided. The mass analyzing electromagnet includes an analysis tube having an internal zone formed as a passage for the ion beam; and a shield member mounted to an inner wall surface of the analyzing tube, a portion of the shield member intersecting with a direction perpendicular to a traveling direction of an ion beam and a mass-based separation direction of the ion beam so as to block a portion of the ion beam.

A microbolometer device integrated with CMOS and BiCMOS technologies and methods of manufacture are disclosed. The method includes forming a microbolometer unit cell, comprises damaging a portion of a substrate to form a damaged region. The method further includes forming infrared (IR) absorbing material on the damaged region. The method further includes isolating the IR absorbing material by forming a cavity underneath the IR absorbing material.

The present invention is related to an apparatus for transporting a charged particle beam. The apparatus may include means for scanning the charged particle beam on a target, a dipole magnet arranged upstream of the means for scanning, at least three quadrupole lenses arranged between the dipole magnet and the means for scanning and means for adjusting the field strength of said at least three quadrupole lenses in function of the scanning angle of the charged particle beam. The apparatus can be made at least single achromatic.

An ion implantation system has an ion source configured to form an ion beam. A mass analyzer mass analyzes the ion beam, a scanning element scans the ion beam in a horizontal direction and a parallelizing lens translates the fanned-out scanned beam into parallel shifting scanning ion beam. For applications needing not only a mean incident angle, but highly-aligned ion incident angles and a tight angular distribution, a slit apparatus is positioned at horizontal and/or vertical front focal points of the parallelizing lens. Minimum horizontal and/or vertical angular distributions of the ion beam on the workpiece are attained by controlling a beam focusing lens upstream of the scanning element for the best beam transmission through the slit system.

A method includes forming a resist pattern, the resist pattern having trenches oriented lengthwise along a first direction and separated by resist walls along both the first direction and a second direction perpendicular to the first direction. The method further includes loading the resist pattern into an ion implanter so that a top surface of the resist pattern faces an ion travel direction, and tilting the resist pattern so that the ion travel direction forms a tilt angle with respect to an axis perpendicular to the top surface of the resist pattern. The method further includes rotating the resist pattern around the axis to a first position; implanting ions into the resist walls with the resist pattern at the first position; rotating the resist pattern around the axis by 180 degrees to a second position; and implanting ions into the resist walls with the resist pattern at the second position.

An ion source including a chamber housing defining an ion source chamber and including an extraction plate on a front side thereof, the extraction plate having an extraction aperture formed therein, and a tubular cathode disposed within the ion source chamber and having an opening formed in a front half thereof nearest the extraction aperture, wherein a rear half of the tubular cathode furthest from the extraction aperture is closed.

The disclosure provides a metal ion source emitting device comprising a ceramic chamber, a leading-out electrode chamber and three cathodes hermetically connected, a trigger electrode fixed on a ceramic insulating element, a cathode target material fixed on an indirect cooling channel, a limiting element fixed on a fixed element, the fixed element fixing the indirect cooling channel on a cathode cooling pipe, the cathode cooling pipe fixed on a cathode flange, a trigger binding post connected with the trigger electrode, a leading-out electrode and an accelerating electrode arranged right below a cathode in the leading-out electrode chamber, and leading-out slits formed on the accelerating electrode and the leading-out electrode. According to the emitting device, three cathodes can operate simultaneously with only one anode, increasing irradiation area of an ion source, and improving the operating efficiency and energy utilization rate, with a more compact emitting source and larger processing area.