Adaptive endpoint detection is applied to delayering of a multi-layer sample utilizing a combination of dynamic and predetermined parameters. Tuned predetermined parameters, varying between layers of the sample, allow automated operation across multiple sites of a device. A semiconductor logic device is described, having a zone of thick metal layers and a zone of thin metal layers. The described techniques can be integrated with analysis operations and can be applied across a wide range of device types and manufacturing processes.

Methods and apparatuses for capturing volume information of microscopic samples include a microscope system having at least one particle beam column, by which a beam of focused, charged particles can be generated, and an in-situ microtome, i.e., a microtome integrated in the microscope system. The method cam include a) providing a sample including a volume of interest (VOI); b) setting a cut surface lying within the sample; c) defining the set cut surface as processing surface; d) exposing the cut surface by virtue of ablating sample material by cutting with the in-situ microtome; and e) processing the sample with the particle beam, wherein the start point of the processing is disposed on the exposed processing surface.

A method of evaluating a region of interest of a sample including: positioning the sample within in a vacuum chamber of an evaluation tool that includes a scanning electron microscope (SEM) column and a focused ion beam (FIB) column; acquiring a plurality of two-dimensional images of the region of interest by alternating a sequence of delayering the region of interest with a charged particle beam from the FIB column and imaging a surface of the region of interest with the SEM column; generating an initial three-dimensional data cube representing the region of interest by stacking the plurality of two-dimensional images on top of each other in an order in which they were acquired; identifying distortions within the initial three-dimensional data cube; and creating an updated three-dimensional data cube that includes corrections for the identified distortions.

Multiple features in a sample are analyzed based on a first sample image of a first surface and a second sample image of a second surface. The first surface includes cross-sections of the multiple features, and the second surface includes cross-sections of the multiple features at different sample depths relative to the first surface. The second surface formed by milling the sample to remove at least a part of the first surface. A 3D model of the multiple features is constructed by comparing the cross-sections of multiple features in the second image and corresponding cross-sections of the multiple features in the first image.

An apparatus and a method for micromachining samples is provided. The apparatus includes an integral combination of a sample holder, a focused ion beam exposure system for projecting a FIB onto a first position on the sample, and a light optical microscope. The LM is configured for imaging or monitoring said first position. The method includes the steps of capturing LM images of the sample, determining a position and physical dimensions of a region of interest in the sample based on the LM images, establishing from the LM images settings of the sample holder and/or the FIB exposure system, for micromachining the sample to bring the region of interest more closer to the surface, and moving the sample or the trajectory of the FIB to locate the first position on the sample accordingly, and activating the FIB for micromachining the sample.

A liquid metal ion source (50) includes: a reservoir (10) configured to hold an ion material (M) forming a liquid metal; a needle electrode (20); an extraction electrode (22) configured to cause an ion of the ion material to be emitted from a distal end of the needle electrode; a beam diaphragm (24), which is arranged on a downstream side of the extraction electrode, and is configured to limit a beam diameter of the ion; and a vacuum chamber (30) configured to accommodate and hold the reservoir, the needle electrode, the extraction electrode, and the beam diaphragm in vacuum, wherein the liquid metal ion source further includes an oxidizing gas introducing portion (40), and wherein the oxidizing gas introducing portion communicates to the vacuum chamber, and is configured to introduce an oxidizing gas into a periphery of the needle electrode.

Disclosed herein are techniques directed toward a protective shutter for a charged particle microscope. An example apparatus at least includes a charged particle column and a focused ion beam (FIB) column, a gas injection nozzle coupled to a translation device, the translation device configured to insert the gas injection nozzle in close proximity to a stage, and a shutter coupled to the gas injection nozzle and arranged to be disposed between the sample and the SEM column when the gas injection nozzle is inserted in close proximity to the stage.

A method and apparatus for material deposition onto a sample to form a protective layer composed of at least two materials that have been formulated and arranged according to the material properties of the sample.

Provided is a machining technology to obtain a desired machining content while suppressing a possibility of causing a redeposition in a machining surface. The invention is directed to provide an ion milling device which includes an ion source which emits an ion beam, a sample holder which holds a sample, and a sample sliding mechanism which slides the sample holder in a direction including a normal direction of an axis of the ion beam.

A method for attaching a prepared sample to a carrier in a focused ion beam chamber. The method includes reducing a temperature within the chamber to substantially below room temperature followed by moving the prepared sample adjacent to a substrate carrier surface. The temperature can be lowered sufficiently to establish a cryogenic condition in the chamber. Attachment of the prepared sample to the substrate carrier is done by controlling the focused ion beam to raster a target area of the surface in the absence of a gas deposition precursor, to sputter material onto the base of the sample and the substrate carrier surface, thereby binding the prepared sample to the substrate carrier.