The focused ion beam apparatus includes: an electron beam column; a focused ion beam column; a sample stage; a coordinate acquisition unit configured to acquire, when a plurality of irradiation positions to which the focused ion beam is to be applied are designated on a sample, plane coordinates of each of the irradiation positions; a movement amount calculation unit configured to calculate, based on the plane coordinates, a movement amount by which the sample stage is to be moved to a eucentric height so that the eucentric height matches an intersection position at which the electron beam and the focused ion beam match each other at each of the irradiation positions; and a sample stage movement control unit configured to move, based on the movement amount, the sample stage to the eucentric height at each of the irradiation positions.

Described herein are a system and method of preparing integrated circuits (ICs) so that the ICs remain electrically active and can have their active circuitry probed for diagnostic and characterization purposes using charged particle beams. The system employs an infrared camera capable of looking through the silicon substrate of the ICs to image electrical circuits therein, a focused ion beam system that can both image the IC and selectively remove substrate material from the IC, a scanning electron microscope that can both image structures on the IC and measure voltage contrast signals from active circuits on the IC, and a means of extracting heat generated by the active IC. The method uses the system to identify the region of the IC to be probed, and to selectively remove all substrate material over the region to be probed using ion bombardment, and further identifies endpoint detection means of milling to the required depth so as to observe electrical states and waveforms on the active IC.

A charged particle buncher includes a series of spaced apart electrodes arranged to generate a shaped electric field. The series includes a first electrode, a last electrode and one or more intermediate electrodes. The charged particle buncher includes a waveform device attached to the electrodes and configured to apply a periodic potential waveform to each electrode independently in a manner so as to form a quasi-electrostatic time varying potential gradient between adjacent electrodes and to cause spatial distribution of charged particles that form a plurality of nodes and antinodes. The nodes have a charged particle density and the antinodes have substantially no charged particle density, and the nodes and the antinodes are formed from a charged particle beam with an energy less than or equal to 500 keV.

Systems and methods of sample preparation using dual ion beam trenching are described. In an example, an inside of a semiconductor package is non-destructively imaged to determine a region of interest (ROI). A mask is positioned over the semiconductor package, and a mask window is aligned with the ROI. A first ion beam and a second ion beam are swept, simultaneously or sequentially, along an edge of the mask window to trench the semiconductor package and to expose the ROI for analysis.

Provided is a charged particle beam apparatus including a focused ion beam column, a sample holder, a stage supporting the sample holder, a securing member rotating unit, a stage driving unit, and a control device. The sample holder includes a securing member fixing a sample. The securing member rotating unit rotates the securing member around a first rotational axis and a second rotational axis. The stage driving unit translates the stage in three dimensions and rotates the stage around a third rotational axis. The control device acquires a correction value for correcting a change in a position of a center of rotation for rotation around at least one among a first rotational axis, a second rotational axis, and a third rotational axis. The control device translates the stage according to the correction value.

A semiconductor analysis system includes a machining device that machines semiconductor wafer to prepare a thin film sample for observation, a transmission electron microscope device that acquires a transmission electron microscope image of the thin film sample, and a host control device that controls the machining device and the transmission electron microscope device. The host control device evaluates the thin film sample based on the transmission electron microscope image, updates machining conditions based on an evaluation result of the thin film sample, and outputs the updated machining conditions to the machining device.

The invention relates to method of milling and imaging a sample. The method comprises the step of providing an imaging system, as well as a milling beam source. The method comprises the steps of milling, using a milling beam from said milling beam source, a sample to remove a layer of the sample; and imaging, using said imaging system, an exposed surface of the sample. As defined herein, the method further comprises the step of determining a relative position of said sample, and using said determined relative position of said sample in said milling step for positioning said sample relative to said milling beam. The relative position of said sample can be a working distance with respect to the imaging system, which can be determined by means of an autofocus procedure.

The disclosure relates to a method of preparing a sample in a charged particle microscope. The method comprises the steps of providing a sample carrier having a mechanical support contour and a grid member connected thereto. The method comprises the step of connecting said sample carrier to a mechanical stage device of the charged particle microscope. Additionally, the method comprises the step of providing a sample, for example a chunk-shaped or lamella-shaped sample and connecting said sample to the grid member of the sample carrier. The method allows, in an embodiment, easy and reliable transfer of a sample between a bulk sample and a sample carrier.

Provided is a machining technology to obtain a desired machining content while suppressing a possibility of causing a redeposition in a machining surface. The invention is directed to provide an ion milling device which includes an ion source which emits an ion beam, a sample holder which holds a sample, and a sample sliding mechanism which slides the sample holder in a direction including a normal direction of an axis of the ion beam.

The present invention provides a charged particle beam apparatus capable of efficiently reducing the effect of a residual magnetic field when SEM observation is performed. The charged particle beam apparatus according to the present invention includes a first mode for passing a direct current to a second coil after turning off a first coil, and a second mode for passing an alternating current to the second coil after turning off the first coil.