Systems and methods for increasing peak ion energy with a low angular spread of ions are described. In one of the systems, multiple radio frequency (RF) generators that are coupled to an upper electrode associated with a plasma chamber are operated in two different states, such as two different frequency levels, for pulsing of the RF generators. The pulsing of the RF generators facilitates a transfer of ion energy during one of the states to another one of the states for increasing ion energy during the other state to further increase a rate of processing a substrate.

An etching method includes: (a) providing, on a support, a substrate having the first region covering the second region and the second region defining a recess receiving the first region, (b) etching the first region until or immediately before the second region is exposed, (c) exposing the substrate to plasma generated from a first process gas containing C and F atoms using a first RF signal and forming a deposit on the substrate, (d) exposing the deposit to plasma generated from a second process gas containing an inert gas using a first RF signal and selectively etching the first region to the second region, and (e) repeating (c) and (d). (c) includes using the RF signal with a frequency of 60 to 300 MHz and/or setting the support to 100 to 200° C. to control a ratio of C to F atoms in the deposit to greater than 1.

An etching method and a plasma processing apparatus form a recess with an intended shape. The etching method includes (a) providing a substrate including a silicon-containing film and a mask on the silicon-containing film. The silicon-containing film including a first region and a second region having a boundary therebetween as viewed in cross section in a direction perpendicular to a plane direction of the substrate. The boundary includes a slope extending in a direction inclined with respect to the plane direction. The method further includes (b) etching, after (a), the first region with first plasma generated from a first process gas to form a recess, (c) supplying, after (b), second plasma generated from a second process gas containing tungsten to the substrate, and (d) etching, after (c), the recess with third plasma generated from a third process gas. The recess crosses the slope in the cross section after (d).

An etching method and a plasma processing apparatus form a recess with an intended shape. The etching method includes (a) providing a substrate, the substrate including a silicon-containing film and a mask on the silicon-containing film; (b) etching the silicon-containing film with a first plasma to form a recess, the first plasma generated from a first process gas; (c) supplying a second plasma to the substrate, the second plasma generated from a second process gas comprising tungsten; and (d) etching the recess with a third plasma generated from a third process gas.

A white light illumination source can illuminate a region of a substrate to be plasma etched with an incident light beam. A camera takes successive images of the region being illuminated during a plasma etch process. Image processing techniques can be applied to the images so as to identify a location of at least one feature on the substrate and to measure a reflectivity signal at the location. The plasma etch process can be modified in response to the measured reflectivity signal at the location.

A plasma processing apparatus includes an electrostatic chuck, a connection surface being provided at a periphery of the electrostatic chuck; an edge adjustment ring, arranged around the electrostatic chuck in a circumferential direction, an inner wall of the edge adjustment ring being opposite to an outer wall of the electrostatic chuck; and an edge ring, arranged around the electrostatic chuck and above the connection surface, and located above the edge adjustment ring. The edge adjustment ring includes an annular body and an annular protrusion protruding toward the edge ring, and the annular body is relatively close to the electrostatic chuck.

There is provided a plasma processing apparatus comprising: a plasma processing chamber; a substrate support disposed in the plasma processing chamber; a lower electrode disposed in the substrate support; a conductive member disposed above the substrate support, the conductive member having at least one coolant inlet and at least one coolant outlet, the conductive member being connected to an RF potential or a DC potential; and an upper electrode assembly including: a conductive plate detachably connected to a bottom surface of the conductive member, the conductive plate having one or more coolant channels communicating with the at least one coolant inlet and the at least one coolant outlet; an electrode plate disposed below the conductive plate; and a conductive bonding sheet disposed between the electrode plate and the conductive plate.

A semiconductor reaction chamber includes a chamber body, a dielectric window, a gas inlet member, a carrier, an upper radio frequency assembly, and a plurality of ultraviolet light generation devices. The dielectric window is arranged at a top of the chamber body. The gas inlet member is arranged at a center position of the dielectric window and configured to introduce a process gas into the chamber body. The carrier is arranged inside the chamber body and configured to carry a to-be-processed wafer. The upper radio frequency assembly is arranged above the chamber body and configured to ionize the process gas introduced into the chamber body to generate a plasma and first ultraviolet light. The plurality of ultraviolet light generation devices is arranged between the dielectric window and the carrier and around the gas inlet member and configured to generate second ultraviolet light radiating toward the carrier.

A plasma processing apparatus 100, which has an impact on global warming and allows for high-throughput plasma processing, includes a chamber 1 in which plasma is generated, a mounting table 2 disposed in the chamber, wherein a substrate S is mounted on the mounting table 2, and a gas supply source 3 (3a to 3d) for supplying gas for generating plasma in the chamber, wherein the substrate is subjected to deep etching by executing alternately and repeatedly an etching process S2 of etching the substrate by using plasma and a protective film deposition process S3 of depositing a protective film in a recess formed through the etching process by using plasma. It is characterized in that, in the protective film deposition process S3, a mixed gas of C.sub.4F.sub.8 and 2,3,3,3-tetrafluoropropene is supplied from the gas supply sources 3b, 3c into the chamber as gas supplied for generating plasma.

A method for cleaning a plasma processing chamber comprising one or more cycles is provided. Each cycle comprises performing an oxygen containing plasma cleaning phase, performing a volatile chemistry type residue cleaning phase, and performing a fluorine containing plasma cleaning phase.