According to an embodiment, an apparatus for a plasma processing system is provided. The apparatus includes a conductive conical frustum having an open top base, an open bottom base, and a surface area coupling the open top base to the open bottom base. A conductive cylinder is positioned within the conductive conical frustum with a closed bottom base and an open top base. The open top base of the conductive cylinder is connected to sidewalls of the open top base of the conductive conical frustum. The conductive cylinder has a height shorter than the height of the conductive conical frustum. The apparatus is configured to provide a broadband RF transition from a matching network to a resonating structure of the plasma processing system for frequencies ranging between 13 megahertz (MHz) and 220 MHz.

This disclosure describes designs and methods for via cleaning, peeling protective film, and providing mild surface roughening and cleaning of a computer chip. A system may include a first electrode configured to generate plasma associated with cleaning vias by etching a residual material associated with smearing; an electrostatic stage configured to generate an electrostatic force associated with peeling the dielectric protective film from the semiconductor; and a stage on which the semiconductor is positioned while the electrostatic stage peels the dielectric protective film from the semiconductor, wherein the plasma is further associated with roughening a surface of the semiconductor after peeling the dielectric protective film from the semiconductor.

Apparatus and method for the plasma treatment of surfaces with a first electrode and a second electrode, the apparatus and method comprises an alternating voltage source between the first and second electrodes, and an electrical field forming, at least between the first and second electrodes, an effective area, which is arranged in front of the first electrode and in which the surface to be treated can be positioned, wherein the second electrode is arranged closer to the effective area than the first electrode. The apparatus and method provides at least one process gas channel for at least one stream of process gas with at least one outlet at the first electrode, wherein the at least one outlet points in the direction of the effective area, the at least one stream of process gas impinges on the electrical field, the electrical field converts the at least one stream of process gas into a stream of plasma, and the stream of plasma impinges on the effective area.

A substrate holding method includes loading a first substrate into a first chamber and placing the first substrate on an electrostatic chuck disposed in the first chamber; applying a first voltage to an electrostatic electrode of the electrostatic chuck to attract the first substrate to the electrostatic chuck; unloading the electrostatic chuck from the first chamber; grinding a front surface of the electrostatic chuck; disposing the electrostatic chuck in a second chamber; placing the second substrate on the electrostatic chuck disposed in the second chamber; applying a second voltage smaller than the first voltage to the electrostatic electrode to attract the second substrate to the electrostatic chuck; and before the attracting of the second substrate, calculating a value of the second voltage by using a value of the first voltage and a value of a thickness of a dielectric of the electrostatic chuck disposed in the second chamber.

A system and method for manufacturing a lattice structure of ionized particles on a substrate, wherein the process may be improved by controlling the number of ionized particles that are ejected from an ionizer and directed to a substrate, and wherein the ionized particles are disposed on the substrate, thereby enabling the creation of a lattice structure that may be as thin as a single layer of ionized particles.

A plasma treatment method subjects a long object to be treated to plasma treatment by placing the long object to be treated in contact with plasma, the density distribution of which varies while selectively passing the long object to be treated through an area having high plasma density so that a surface of the long object can be thoroughly and uniformly subjected to plasma treatment. The method is applied to a plasma treatment apparatus, and a plasma-treated long object can be obtained by the method.

A method of post-deposition processing includes performing a preheat process in a radical treatment chamber, the preheat process comprising exposing a substrate having a metal layer formed thereon to purge gas and purging the purge gas at a pressure of between 400 Torr and 535 Torr, and performing a radical treatment process in the radical treatment chamber, the radical treatment process comprising exposing the substrate to radical species.

Disclosed is a display device, including a first substrate having flexibility including a pixel region and a frame region around the pixel region, a pixel arranged on a first surface of the first substrate in the pixel region, and a terminal section arranged in the frame region and connected to the pixel, in which the first substrate includes an adjustment region between the pixel and the terminal section, the adjustment region having a different Young's modulus from those of the pixel region and the frame region.

Sterilization apparatus comprising a sterilization instrument configured to be inserted through the instrument channel of a surgical scoping device and a withdrawal device for withdrawing the sterilization instrument from the instrument channel at a predetermined rate. The sterilization instrument comprises an elongate probe having a probe tip with a first electrode and a second electrode arranged to produce an electric field from received RF and/or microwave frequency EM energy. In operation the instrument may disinfect an inner surface of the instrument channel by emitting energy whilst being withdrawn through the channel.

A treatment-target modification device is configured to modify a treatment target being conveyed, with discharge. The treatment-target modification device includes: a hydrophilization unit configured to perform hydrophilization treatment on the treatment target (20; and a measurement unit configured to measure two-dimensional distribution of a reflectance spectrum of light reflected from the hydrophilization-treated treatment target.