Exemplary methods of semiconductor processing may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the semiconductor processing chamber. The methods may include forming a silicon-containing material on the substrate. The silicon-containing material may be characterized by a stress of greater than or about ?200 MPa. The methods may include annealing the substrate at a temperature of greater than or about 700? C.

Exemplary processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed in the processing region. The substrate may define a feature within the substrate. The methods may include forming plasma effluents of the silicon-containing precursor. The methods may include depositing a silicon-containing material on the substrate. The methods may include providing a hydrogen-containing precursor to the processing region of the semiconductor processing chamber. The methods may include forming plasma effluents of the hydrogen-containing precursor. The methods may include etching the silicon-containing material from a sidewall of the feature within the substrate with the plasma effluents of the hydrogen-containing precursor. The methods may include densifying remaining silicon-containing material within the feature defined within the substrate.

Disclosed is a display device, including a first substrate having flexibility including a pixel region and a frame region around the pixel region, a pixel arranged on a first surface of the first substrate in the pixel region, and a terminal section arranged in the frame region and connected to the pixel, in which the first substrate includes an adjustment region between the pixel and the terminal section, the adjustment region having a different Young's modulus from those of the pixel region and the frame region.

Methods of forming microelectronic devices comprise forming a dielectric layer on a substrate, the dielectric layer comprising at least one feature defining a gap including sidewalls and a bottom. The methods include forming a hardmask on the dielectric layer; selectively depositing a self-assembled monolayer (SAM) on the bottom of the gap and on the hardmask; treating the microelectronic device with a plasma to remove the self-assembled monolayer (SAM) from the hardmask; forming a barrier layer on the dielectric layer and on the hardmask; selectively depositing a metal liner on the barrier layer on the sidewall; and performing a gap fill process on the metal liner.

A substrate holding method includes loading a first substrate into a first chamber and placing the first substrate on an electrostatic chuck disposed in the first chamber; applying a first voltage to an electrostatic electrode of the electrostatic chuck to attract the first substrate to the electrostatic chuck; unloading the electrostatic chuck from the first chamber; grinding a front surface of the electrostatic chuck; disposing the electrostatic chuck in a second chamber; placing the second substrate on the electrostatic chuck disposed in the second chamber; applying a second voltage smaller than the first voltage to the electrostatic electrode to attract the second substrate to the electrostatic chuck; and before the attracting of the second substrate, calculating a value of the second voltage by using a value of the first voltage and a value of a thickness of a dielectric of the electrostatic chuck disposed in the second chamber.

A gas delivery system for a substrate processing system includes a first manifold and a second manifold. A gas delivery sub-system selectively delivers gases from gas sources. The gas delivery sub-system delivers a first gas mixture to the first manifold and a second gas mixture. A gas splitter includes an inlet in fluid communication with an outlet of the second manifold, a first outlet in fluid communication with an outlet of the first manifold, and a second outlet. The gas splitter splits the second gas mixture into a first portion at a first flow rate that is output to the first outlet and a second portion at a second flow rate that is output to the second outlet. First and second zones of the substrate processing system are in fluid communication with the first and second outlets of the gas splitter, respectively.

A treatment-target modification device is configured to modify a treatment target being conveyed, with discharge. The treatment-target modification device includes: a hydrophilization unit configured to perform hydrophilization treatment on the treatment target (20; and a measurement unit configured to measure two-dimensional distribution of a reflectance spectrum of light reflected from the hydrophilization-treated treatment target.

The present disclosure is directed to a variable sintered coating or a variable microstructure coating as well as an apparatus and method of making such a variable coating onto substrates. The substrate has some electrical conductivity and is used as one electrode while an ionized gas is used as the other electrode that is moved over the areas of the powder coating to be sintered. An electrical current is used to cause a plasma produced through the gas, resulting in a combined energy and temperature profile sufficient for powder-powder and powder-substrate bonding. This preferred method is referred to as flame-assisted flash sintering (FAFS).

A scrubber may include a plasma processing unit including a plasma generating device and a power generating device, a combustion processing unit including a combustor, which is used to form a flame, a connection conduit connected to the plasma processing unit and spaced apart from the combustion processing unit, and a back-end processing unit connected to the combustion processing unit. The connection conduit may be used to supply a waste gas to the plasma generating device, and the plasma generating device may be configured to form plasma using the waste gas. The plasma and combustion processing units may be configured to provide a first reaction space, in which the plasma is formed, and a second reaction space, in which the flame is formed.

A substrate-treatment method includes (a) providing a substrate at a stage, the substrate including a silicon nitride-containing film, in which a recess defined by a top, a side wall, and a bottom is formed, and a silicon film exposed from the bottom of the recess; (b) forming a silicon oxide film along the recess; (c) exposing the silicon oxide film to a plasma of a process gas containing a hydrogen gas, thereby modifying the silicon oxide film at the top and bottom of the recess selectively relative to the side wall by an anisotropic plasma treatment; and (d) selectively removing the modified silicon oxide film at the top and bottom of the recess through chemical etching without using a plasma, thereby retaining the silicon oxide film at the side wall of the recess.