According to various embodiments, a wafer chuck may include at least one support region configured to support a wafer in a receiving area; a central cavity surrounded by the at least one support region configured to support the wafer only along an outer perimeter; and a boundary structure surrounding the receiving area configured to retain the wafer in the receiving area.

A plasma gate device comprises a plasma creation chamber, first through fourth dielectrics, and first through sixth electrodes. The plasma creation chamber is a space in which plasma is created from a first fluid and a second fluid. The first and second dielectrics form upper and lower boundaries on a first side of the plasma creation chamber. The third and fourth dielectrics form upper and lower boundaries on a second side of the plasma creation chamber. The first and second electrodes receive voltages to generate a first electric field which creates a first plasma on the first side of the plasma creation chamber. The third and fourth electrodes receive voltages to generate a second electric field which creates a second plasma on the second side of the plasma creation chamber. The fifth electrode extracts electrons from the first plasma. The sixth electrode injects electrons into the second plasma.

Methods include producing tunable carbon structures and combining carbon structures with a polymer to form a composite material. Carbon structures include crinkled graphene. Methods also include functionalizing the carbon structures, either in-situ, within the plasma reactor, or in a liquid collection facility. The plasma reactor has a first control for tuning the specific surface area (SSA) of the resulting tuned carbon structures as well as a second, independent control for tuning the SSA of the tuned carbon structures. The composite materials that result from mixing the tuned carbon structures with a polymer results in composite materials that exhibit exceptional favorable mechanical and/or other properties. Mechanisms that operate between the carbon structures and the polymer yield composite materials that exhibit these exceptional mechanical properties are also examined.

Device for hydrogen sulfide plasma dissociation includes a plasma chemical reactor including an arc plasma generator that has a cathode and an anode; the anode having a working surface for contacting hydrogen sulfide plasma, wherein the working surface is made from a material that includes stainless steel, tungsten or molybdenum; the cathode having a tip for arc attachment where a cathode spot is formed, wherein the cathode tip is made from pure tungsten, pure molybdenum, a tungsten or molybdenum alloy with tungsten as a major component or a composite material in which tungsten or molybdenum is the major component; and a flow path configured to have an inlet for gaseous hydrogen sulfide for dissociation in plasma into hydrogen and sulfur, and an outlet for gaseous products of hydrogen sulfide plasma dissociation. Optionally, the alloy or composite material has up to 10% low work function elements (thorium, cerium, lanthanum, or zirconium).

Methods include producing a plurality of carbon particles in a plasma reactor, functionalizing the plurality of carbon particles in-situ in the plasma reactor to promote adhesion to a binder, and combining the plurality of carbon particles with the binder to form a composite material. The plurality of carbon particles comprises 3D graphene, where the 3D graphene comprises a pore matrix and graphene nanoplatelet sub-particles in the form of at least one of: single layer graphene, few layer graphene, or many layer graphene. Methods also include producing a plurality of carbon particles in a plasma reactor; functionalizing, in the plasma reactor, the plurality of carbon particles to promote chemical bonding with a resin; and combining, within the plasma reactor, the functionalized plurality of carbon particles with the resin to form a composite material.

A plasma gate device comprises a plasma creation chamber, first through fourth dielectrics, and first through sixth electrodes. The plasma creation chamber is a space in which plasma is created from a first fluid and a second fluid. The first and second dielectrics form upper and lower boundaries on a first side of the plasma creation chamber. The third and fourth dielectrics form upper and lower boundaries on a second side of the plasma creation chamber. The first and second electrodes receive voltages to generate a first electric field which creates a first plasma on the first side of the plasma creation chamber. The third and fourth electrodes receive voltages to generate a second electric field which creates a second plasma on the second side of the plasma creation chamber. The fifth electrode extracts electrons from the first plasma. The sixth electrode injects electrons into the second plasma.

According to various embodiments, a wafer chuck may include at least one support region configured to support a wafer in a receiving area; a central cavity surrounded by the at least one support region configured to support the wafer only along an outer perimeter; and a boundary structure surrounding the receiving area configured to retain the wafer in the receiving area.

Methods include producing a plurality of carbon particles in a plasma reactor, functionalizing the plurality of carbon particles in-situ in the plasma reactor to promote adhesion to a binder, and combining the plurality of carbon particles with the binder to form a composite material. The plurality of carbon particles comprises 3D graphene, where the 3D graphene comprises a pore matrix and graphene nanoplatelet sub-particles in the form of at least one of: single layer graphene, few layer graphene, or many layer graphene. Methods also include producing a plurality of carbon particles in a plasma reactor; functionalizing, in the plasma reactor, the plurality of carbon particles to promote chemical bonding with a resin; and combining, within the plasma reactor, the functionalized plurality of carbon particles with the resin to form a composite material.

A method for recovering ashing rate in a plasma processing chamber includes positioning a substrate in a processing volume of a processing chamber, wherein the substrate has a silicon chloride residue formed thereon. The method further includes evaporating the silicon chloride residue from the substrate. The method further includes depositing the evaporated silicon chloride on one or more interior surfaces in the processing volume. The method further includes exposing the deposited silicon chloride to an oxidizing environment to convert the deposited silicon chloride to a silicon oxide passivation layer. The oxidizing environment can comprise an oxygen-containing plasma, oxygen radicals, or a combination thereof.

The present invention increases uniformity of plasma processing in a surface to be processed of an object to be processed or increases uniformity of plasma processing between objects to be processed. There is provided a plasma processing apparatus including: a processing container; a gas supply system; an exhaust system; a plasma generating unit; a gas flow path installed between an outer wall of the processing container and the plasma generating unit, the gas flow path guiding a temperature controlling gas to flow along the outer wall of the processing container; a plurality of gas introduction holes disposed along a circumferential direction of the processing container and configured to introduce the temperature controlling gas into the gas flow path; and a gas exhaustion hole configured to exhaust the temperature controlling gas passed through the gas flow path.