A method for separating a solid-body layer from a donor substrate includes: providing a donor substrate having a planar surface, a longitudinal axis orthogonal to the planar surface, and a peripheral surface; producing a plurality of modifications within the donor substrate using at least one LASER beam, wherein the at least one LASER beam penetrates the donor substrate via the peripheral surface at an angle not equal to 90° relative to the longitudinal axis of the donor substrate; producing a stress-inducing polymer layer on the planar surface of the donor substrate; and producing mechanical stresses in the donor substrate by a thermal treatment of the stress-inducing polymer layer, wherein the mechanical stresses produce a crack for separating the solid-body layer, and wherein the crack propagates along the modifications.

A silicon wafer for an electronic component, having an epitaxially grown silicon layer on a carrier substrate and the silicon layer is removed as a silicon wafer from the carrier substrate, in which at least one p-dopant and at least one n-dopant are introduced into the silicon layer during the epitaxial growth. The dopants are introduced into the silicon layer such that the silicon layer is formed having an electrically active p-doping and an electrically active n-doping, each greater than 1×10.sup.14 cm.sup.−3.

A manufacturing method of a carrier for a double-side polishing apparatus, including: preparing a carrier base material and insert thicker than the carrier base material, inserting the insert into a holding hole so as to protrude the insert from both sides of the front surface and back surface of the carrier base material, measuring each of a front protruding amount of the insert protruded from front surface of the carrier base material and a back protruding amount of the insert protruded from back surface of the carrier base material, setting each rotational speed of the upper turn table and lower turn table in starting-up polishing of the carrier so as to decrease the difference between the front protruding amount and back protruding amount, and a starting-up polishing step to subject the carrier to starting-up polishing at each set rotational speed of the upper turn table and the lower turn table.

A SiC single crystal, wherein difference between the curving amount of the atomic arrangement surface on the cut surface cut along the <1-100> direction through the center in plan view and the curving amount of the atomic arrangement surface on the cut surface cut along the <11-20> direction that passes through the center of view and is perpendicular to the <1-100> direction is 60 μm or less.

Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

Systems, apparatuses, and methods are provided for predicting or determining irregular processing parameters during processing of a semiconductor wafer in a semiconductor processing apparatus, such as an etching apparatus. A semiconductor processing apparatus includes a load port that is configured to receive a semiconductor wafer. A process chamber is coupled to the load port, and a fan is configured to selectively vary a flow of fluid in the process chamber. One or more sensors are provided in the process chamber and are configured to sense one or more processing parameters in the process chamber. A controller is coupled to the one or more sensors and to the fan, and the controller is configured to control the fan to vary the flow of fluid in the process chamber based on the sensed one or more processing parameters.

The invention relates to a method for separating at least one solid-state layer (4) from at least one solid (1). The method according to the invention includes the steps of: producing a plurality of modifications (9) by means of laser beams in the interior of the solid (1) in order to form a separation plane (8); producing a composite structure by arranging or producing layers and/or components (150) on or above an initially exposed surface (5) of the solid (1), the exposed surface (5) being part of the solid-state layer (4) to be separated; introducing an external force into the solid (1) in order to create stresses in the solid (1), the external force being so great that the stresses cause a crack to propagate along the separation plane (8), wherein the modifications for forming the separation plane (8) are produced before the composite structure is produced.

A method for disassembling a stack of at least three substrates. The invention relates to the techniques for transferring thin films in the microelectronics field. It proposes a method for disassembling a stack of at least three substrates having between them two interfaces, one interface of which has an adhesion energy and an interface of which has an adhesion energy, with less than, the method comprising: 1) implementing a removal of material on the first substrate, in order to expose a surface of the second substrate, 2) transferring the stack onto a flexible adhesive film so that the surface has, with an adhesive layer of the film, an adhesion energy greater than, and 3) disassembling the third substrate at the interface between the second substrate and the third substrate. The method makes it possible to open the stack via the interface thereof with the highest adhesion energy.

Implementations of a method of forming a plurality of semiconductor devices on a semiconductor substrate may include: providing a semiconductor substrate having a first surface, a second surface, a size, and a thickness where the second surface opposes the first surface and the thickness is between the first surface and the second surface. The method may include processing the semiconductor substrate through a plurality of semiconductor device fabrication processes to form a plurality of semiconductor devices on the first surface. The thickness may be between 100 microns and 575 microns and the size may be 150 mm. The semiconductor substrate may not be coupled with a carrier or support.

Embodiments of the present disclosure generally relate to an optically transparent substrate, comprising a major surface having a peripheral edge region with an orientation feature formed therein, and a texture formed on the peripheral edge region, the texture having an opacity that is greater than an opacity of the major surface.