The present disclosure provides a method for wafer bonding, including providing a wafer, forming a sacrificial layer on a top surface of the first wafer, trimming an edge of the first wafer to obtain a first wafer area, cleaning the top surface of the first wafer, removing the sacrificial layer, and bonding the top surface of the first wafer to a second wafer having a second wafer area greater than the first wafer area.

A semiconductor substrate manufacturing method according to an embodiment comprises the steps of: contaminating at least one of a surface layer of a doped semiconductor substrate having a specific resistance of less than 0.1 .Math.cm and a bulk layer below the surface layer with at least one metal of Fe, Cu, and Ni; performing dry oxidation at 950 C. for 30 minutes to forcibly form an oxide film on the surface of the semiconductor substrate; and assessing at least one of the presence and the degree of contamination of metal contained in at least one of the oxide film-formed surface layer and bulk layer by using a photoluminescence assessment method.

An InP substrate that is a group III-V compound semiconductor substrate includes particles of greater than or equal to 0.19 m in particle size at less than or equal to 0.22 particles/cm.sup.2 or particles of greater than or equal to 0.079 m in particle size at less than or equal to 20 particles/cm.sup.2 on the main surface. An epilayer-attached InP substrate that is an epilayer-attached group III-V compound semiconductor substrate includes the InP substrate mentioned above and an epitaxial layer disposed on the main surface of the InP substrate, and includes LPDs of greater than or equal to 0.24 m in circle-equivalent diameter at less than or equal to 10 defects/cm.sup.2 or LPDs of greater than or equal to 0.136 m in circle-equivalent diameter at less than or equal to 30 defects/cm.sup.2 on the main surface in a case where the epitaxial layer has a thickness of 0.3 m.

A method of making a device substrate article having a device modified substrate supported on a glass carrier substrate, including: treating at least a portion of the first surface of a device substrate, at least a portion of a first surface of a glass carrier, or a combination thereof, wherein the treating produces a surface having: silicon; oxygen; carbon; and fluorine amounts; and a metal to fluorine ratio as defined herein; contacting the treated surface with an untreated or like-treated counterpart device substrate or glass carrier substrate to form a laminate comprised of the device substrate bonded to the glass carrier substrate; modifying at least a portion of the non-bonded second surface of the device substrate of the laminate with at least one device surface modification treatment; and separating the device substrate having the device modified second surface from the glass carrier substrate.

During a pre-treat process, hydrogen plasma is used to remove contaminants (e.g., oxygen, carbon) from a surface of a wafer. The hydrogen plasma may be injected into the plasma chamber via an elongated injector nozzle. Using such elongated injector nozzle, a flow of hydrogen plasma with a significant radial velocity flows over the wafer surface, and transports volatile compounds and other contaminant away from the wafer surface to an exhaust manifold. A protective liner made from crystalline silicon or polysilicon may be disposed on an inner surface of the plasma chamber to prevent contaminants from being released from the surface of the plasma chamber. To further decrease the sources of contaminants, an exhaust restrictor made from silicon may be employed to prevent hydrogen plasma from flowing into the exhaust manifold and prevent volatile compounds and other contaminants from flowing from the exhaust manifold back into the plasma chamber.

Methods of doping a semiconductor material are disclosed. Some embodiments provide for conformal doping of three dimensional structures. Some embodiments provide for doping with high concentrations of boron for p-type doping.

Methods and apparatus for processing a substrate include cleaning and self-assembly monolayer (SAM) formation for subsequent reverse selective atomic layer deposition. An apparatus may include a process chamber with a processing volume and a substrate support including a pedestal, a remote plasma source fluidly coupled to the process chamber and configured to produce radicals or ionized gas mixture with radicals that flow into the processing volume to remove residue or oxides from a surface of the substrate, a first gas delivery system with a first ampoule configured to provide at least one first chemical into the processing volume to produce a SAM on the surface of the substrate, a heating system located in the pedestal and configured to heat a substrate by flowing gas on a backside of the substrate, and a vacuum system fluidly coupled to the process chamber and configured to control heating of the substrate.

Describes are shutter disks comprising one or more of titanium (Ti), barium (Ba), or cerium (Ce) for physical vapor deposition (PVD) that allows pasting to minimize outgassing and control defects during etching of a substrate. The shutter disks incorporate getter materials that are highly selective to reactive gas molecules, including O.sub.2, CO, CO.sub.2, and water.

The present disclosure provides a method for wafer bonding, including providing a wafer, forming a sacrificial layer on a top surface of the first wafer, trimming an edge of the first wafer to obtain a first wafer area, cleaning the top surface of the first wafer, removing the sacrificial layer, and bonding the top surface of the first wafer to a second wafer having a second wafer area greater than the first wafer area.

A system and method for cleaning and inspecting ring frames is disclosed here. In one embodiment, a ring frame processing system includes: a cleaning station configured to remove a first tape on a first surface of a ring frame using a first blade, clean first adhesive residues from the first tape on the first surface of the ring frame using a first wheel brush, and remove second adhesive residues from a second tape on a second surface of the ring frame using a second blade; and an inspection station, wherein the inspection station comprises an automated optical inspection system configured to determine the cleanness of the first and second surfaces of the ring frame after cleaning.