Apparatus for cleaning a workpiece to remove foreign matter sticking to the workpiece includes a chuck table having a holding surface for holding the workpiece and a cleaning unit provided so as to face the workpiece for spraying a cleaning fluid to clean the workpiece. The cleaning unit includes a cleaning nozzle having a nozzle hole for spraying the cleaning fluid toward the workpiece, and a water film forming nozzle having an annular slit formed so as to surround the nozzle hole of the cleaning nozzle. The annular slit sprays the cleaning fluid in the form of a film having a conical shape, and extends from the annular slit to the workpiece held on the chuck table. The cleaning fluid sprayed from the nozzle hole of the cleaning nozzle has a columnar shape surrounded by the cleaning fluid sprayed from the annular slit of the water film forming nozzle.

Methods and tools for de-bonding and cleaning substrates are disclosed. A method includes de-bonding a surface of a first substrate from a second substrate, and after de-bonding, cleaning the surface of the first substrate. The cleaning comprises physically contacting a cleaning mechanism to the surface of the first substrate. A tool includes a de-bonding module and a cleaning module. The de-bonding module comprises a first chuck, a radiation source configured to emit radiation toward the first chuck, and a first robot arm having a vacuum system. The vacuum system is configured to secure and remove a substrate from the first chuck. The cleaning module comprises a second chuck, a spray nozzle configured to spray a fluid toward the second chuck, and a second robot arm having a cleaning device configured to physically contact the cleaning device to a substrate on the second chuck.

Provided is a method and system for stripping an ion implanted resist or performing a post-ash clean using a single substrate tool. Cleaning objectives and cleaning operating variables are selected for optimization. The first step immerses the substrate in a first treatment chemical, while concurrently irradiating the substrate with UV light, the process completed in a first process time, a first flow rate, and a first rotation speed of the substrate. The second step dispenses onto the substrate a second treatment chemical at a second temperature and a second composition, the second treatment chemical dispensed at a dispense temperature, and completed in a second process time and a second rotation speed. The two or more selected cleaning operating variables comprise UV wavelength, UV power, first concentration, first rotation speed, first flow rate, second process time, second rotation speed, percentage of residue removal, and dispense temperature.

A system for laser ashing of polyimide for a semiconductor manufacturing process is provided. The system includes: a semiconductor chip, a top chip attached to the semiconductor chip by a connection layer, a supporting material, a polyimide glue layer disposed between the supporting material and semiconductor chip, a plasma asher, and an ashing laser configured to ash the polyimide glue on the semiconductor chip.

A bonded assembly may be formed by performing a chip plasma clean process on a semiconductor chip; generating at least one chip infrared image of a cleaned side of the semiconductor chip; measuring an average emissivity of at least one metallic region in the at least one chip infrared image; performing a subsequent processing step selected from a bonding step and an alternative processing step based on the measured average emissivity. The bonding step is performed if the measured average emissivity is less than a predetermined emissivity threshold value. The alternative processing step is performed if the measured average emissivity is greater than the predetermined emissivity threshold value. The alternative processing step may be selected from an additional clean step and an additional inspection step.

Representative implementations of techniques and methods include processing singulated dies in preparation for bonding. A plurality of semiconductor die components may be singulated from a wafer component, the semiconductor die components each having a substantially planar surface. Particles and shards of material may be removed from edges of the plurality of semiconductor die component. Additionally, one or more of the plurality of semiconductor die components may be bonded to a prepared bonding surface, via the substantially planar surface.

In one embodiment, semiconductor die are singulated from a semiconductor wafer having a layer of material by placing the semiconductor wafer onto a carrier tape with the layer of material adjacent the carrier tape, forming singulation lines through the semiconductor wafer to expose the layer of material within the singulation lines, and separating portions of the layer of material using a fluid.

The present invention provides a method of unit level liquid crystal display device assembly process for liquid crystal on silicon. It starts with sawing silicon wafer and ITO glass substrate. Then good silicon dies and ITO glass dies will be picked and transferred to separate carriers. Alignment layers will respectively be coated on each silicon die and ITO glass die after cleaning. Then there are two options for the following steps. In method one, silicon die and ITO glass die lamination comes after coating frame adhesive. Then frame adhesive is cured. The liquid crystal will fill the cell and then seal the fill port. Die mounting, wire bonding and encapsulation will come along with external ITO connection to call it an end. In method two, frame adhesive precedes internal connection and LC one drop fill. Then silicon die and ITO glass die are laminated before frame adhesive cure. Afterwards die mount, wire bonding and encapsulation come last.

Methods and tools for de-bonding and cleaning substrates are disclosed. A method includes de-bonding a surface of a first substrate from a second substrate, and after de-bonding, cleaning the surface of the first substrate. The cleaning comprises physically contacting a cleaning mechanism to the surface of the first substrate. A tool includes a de-bonding module and a cleaning module. The de-bonding module comprises a first chuck, a radiation source configured to emit radiation toward the first chuck, and a first robot arm having a vacuum system. The vacuum system is configured to secure and remove a substrate from the first chuck. The cleaning module comprises a second chuck, a spray nozzle configured to spray a fluid toward the second chuck, and a second robot arm having a cleaning device configured to physically contact the cleaning device to a substrate on the second chuck.

A mounting apparatus of a chip including a mechanism configured to arrange a front surface of a chip and a front surface of a substrate to face each other such that a back surface of the chip is attached to a sheet, the sheet having a first portion corresponding to the selected chip and a the second portion arranged at a periphery of the first portion corresponding to the selected chip in the sheet when seen in a direction perpendicular to the front surface of the substrate; a holding mechanism moving in a direction that is not perpendicular to the front surface of the substrate and arranged to hold the second portion of the sheet; and a pushing mechanism for pushing the back surface of the chip through the first portion of the sheet so that the front surface of the chip is brought close to the front surface of the substrate with the first portion deformed in a state where the second portion is held by the holding mechanism, and configured to release the pushing mechanism from the first portion of the sheet to strip the sheet from the back surface of the chip.