A method of operating a wafer processing system includes etching a batch of wafers. The method also includes transferring at least a portion of the batch of wafers to a first front opening universal pod (FOUP). The method further includes purging an interior of the first FOUP with an inert gas. The method additionally includes transporting the first FOUP from a first loading port to a second loading port. The method also includes monitoring an elapsed time from the purging. The method further includes performing a second purging of the interior of the first FOUP if the elapsed time exceeds a threshold time. The method additionally includes cleaning the batch of wafers.

Methods and tools for de-bonding and cleaning substrates are disclosed. A method includes de-bonding a surface of a first substrate from a second substrate, and after de-bonding, cleaning the surface of the first substrate. The cleaning comprises physically contacting a cleaning mechanism to the surface of the first substrate. A tool includes a de-bonding module and a cleaning module. The de-bonding module comprises a first chuck, a radiation source configured to emit radiation toward the first chuck, and a first robot arm having a vacuum system. The vacuum system is configured to secure and remove a substrate from the first chuck. The cleaning module comprises a second chuck, a spray nozzle configured to spray a fluid toward the second chuck, and a second robot arm having a cleaning device configured to physically contact the cleaning device to a substrate on the second chuck.

A semiconductor device has a semiconductor wafer. The semiconductor wafer includes a plurality of semiconductor die. An insulating layer is formed over an active surface of the semiconductor die. A trench is formed in a non-active area of the semiconductor wafer between the semiconductor die. The trench extends partially through the semiconductor wafer. A carrier with adhesive layer is provided. The semiconductor die are disposed over the adhesive layer and carrier simultaneously as a single unit. A backgrinding operation is performed to remove a portion of the semiconductor wafer and expose the trench. The adhesive layer holds the semiconductor die in place during the backgrinding operation. An encapsulant is deposited over the semiconductor die and into the trench. The carrier and adhesive layer are removed. The encapsulated semiconductor die are cleaned and singulated into individual semiconductor devices. The electrical performance and functionality of the semiconductor devices are tested.

A method for removing undesirable particles from a semiconductor package is disclosed. The method comprises dispensing dry ice into random cavities of the semiconductor package, and removing the undesirable particles from the random cavities using the dry ice, where the dry ice causes the undesirable particles to dislodge from the random cavities, and where the undesirable particles are removed through an exhaust system. The method further comprises placing the semiconductor package into a vacuum, dispensing nitrogen into the random cavities, and hermetically sealing the semiconductor package so as to produce a hermetic semiconductor package. At least one of the random cavities is on a surface of a semiconductor die in the semiconductor package.

A wafer processing method includes a wafer holding step of holding a wafer having devices formed on the front side, a protective film forming step of forming a water-soluble protective film on the front side of the wafer, a laser beam applying step of applying a laser beam to the wafer along streets, a cleaning step of cleaning the wafer to then remove the protective film, and a foreign matter removing step of removing foreign matter from the wafer when a predetermined period of time has elapsed after cleaning. This period of time is set as a period of time until a phosphorus containing reaction product produced at a laser processed portion is evaporated to react with water in the air, thereby producing the foreign matter containing phosphorus on bumps formed on each device.

A substrate cleaning apparatus may include a substrate support having a support surface to support a substrate to be cleaned, wherein the substrate support is rotatable about a central axis normal to the support surface; a first nozzle to provide a first cleaning gas to a region of the inner volume corresponding to the position of an edge of the substrate when the substrate is supported by the support surface of the substrate support; a first annular body disposed opposite and spaced apart from the support surface of the substrate support by a gap, the first annular body having a central opening defined by an inner wall shaped to provide a reducing size of the gap between the first annular body and the support surface in a radially outward direction; and a first gas inlet to provide a first gas to the central opening of the first annular body.

An process including supplying a mixture of a treatment liquid, ozone, carbon dioxide and optional agents for treatment of a non-diced or diced workpiece comprised of chemically sensitive materials within a system having a liquid supply line between a reservoir containing the treatment liquid and a treatment chamber housing the workpiece, one or more nozzles accepting the treatment liquid from the liquid supply line and spraying same onto the surface of the workpiece, including the process of spraying ozone introduced into an environment containing the workpiece, and the injection of carbon dioxide into the environment to preserve the workpiece support by controlling the liquid layer of the processing liquid, the processing temperature, and the introduction of carbon dioxide and ozone into the reaction chamber.

In one embodiment, semiconductor die are singulated from a semiconductor wafer having a layer of material by placing the semiconductor wafer onto a carrier tape with the layer of material adjacent the carrier tape, forming singulation lines through the semiconductor wafer to expose the layer of material within the singulation lines, and separating portions of the layer of material using a fluid.

A method for inspection of a semiconductor device is disclosed. In one aspect, the method includes performing a processing step in manufacturing of the semiconductor device, wherein a compound is at least in contact with the semiconductor device. The method also includes capturing an image on a two-dimensional image sensor of an area of at least part of the semiconductor device, wherein the captured image comprises spectral information for a plurality of positions in the area, and wherein the spectral information comprises intensity of incident electro-magnetic radiation for a plurality of different wavelength bands across a spectrum of wavelengths. The method also includes processing the spectral information of the captured image for each of the plurality of positions to determine whether residue of the compound is present in the position. The method also includes outputting information indicating positions for which residue of the compound is present for controlling a subsequent processing step in manufacturing of the semiconductor device.

Implementations of methods of forming a plurality of semiconductor die may include forming a damage layer beneath a surface of a die street in a semiconductor substrate, singulating the semiconductor substrate along the die street into a plurality of semiconductor die, and removing one or more particulates in the die street after singulating through applying sonic energy to the plurality of semiconductor die.