H01L21/02082

Composition for removing polymer

Disclosed is a composition for removing polymers. The composition contains a fluorinated alkyl compound, a polar aprotic solvent, and an acyclic secondary or tertiary amine compound.

METHOD FOR CLEANING SUBSTRATE AND CLEANING DEVICE
20230260780 · 2023-08-17 ·

According to one embodiment, a method including supplying a liquid onto a substrate, solidifying the liquid on the substrate to form a solidified body, and melting the solidified body of the liquid on the substrate is provided. When solidifying the liquid, an internal pressure of the liquid on the substrate is varied.

METHODS FOR STRIPPING AND CLEANING SEMICONDUCTOR STRUCTURES
20230260779 · 2023-08-17 ·

Methods for removing an oxide film and for cleaning silicon-on-insulator structures are disclosed. The methods may involve immersing the silicon-on-insulator structure in a stripping bath to strip an oxide film from the surface of the silicon-on-insulator structure. The stripped silicon-on-insulator structure is immersed in an ozone bath comprising ozone. The ozone-treated silicon-on-insulator structure may be immersed in an SC-1 bath comprising ammonium hydroxide and hydrogen peroxide to clean the structure.

MULTI-WAFER DEPOSITION TOOL FOR REDUCING RESIDUAL DEPOSITION ON TRANSFER BLADES AND METHODS OF OPERATING THE SAME
20220139758 · 2022-05-05 ·

A multi-wafer deposition tool includes a vacuum enclosure including a platen laterally surrounding multiple wafer stages, a spindle-blade assembly including a spindle and multiple transfer blades attached to the spindle, and a controller configured to transfer wafers between the multiple wafer stages through rotation of the multiple transfer blades around a rotation axis pasting through the spindle. A chamber clean process may be performed while the transfer blades of the spindle-blade assembly are positioned over the multiple wafer stages. Alternatively or additionally, a deposition cycle may be performed while the transfer blades of the spindle-blade assembly are positioned between neighboring pairs of the wafer stages and while a purge gas that flows out of purge gas openings into spaces between the wafer stages.

Cleaning composition for removing oxide and method of cleaning using the cleaning composition

The present disclosure relates to a cleaning composition for removing an oxide including an acid selected from an organic acid, an inorganic acid, and a combination thereof; a salt selected from an organic salt, an inorganic salt, and a combination thereof; a surfactant; and water, and a method of cleaning using the cleaning composition.

Method for removing organic cured film on substrate, and acidic cleaning liquid

A method includes contacting an organic cured film with an acidic cleaning liquid including sulfuric acid and a water-soluble organic solvent and does not include a compound capable of generating nitronium ions. An amount of the sulfuric acid in the acidic cleaning liquid is 40% by mass or more, and an amount of water in the acidic cleaning liquid is 5% by mass or less.

Multi-wafer deposition tool for reducing residual deposition on transfer blades and methods of operating the same

A multi-wafer deposition tool includes a vacuum enclosure including a platen laterally surrounding multiple wafer stages, a spindle-blade assembly including a spindle and multiple transfer blades attached to the spindle, and a controller configured to transfer wafers between the multiple wafer stages through rotation of the multiple transfer blades around a rotation axis pasting through the spindle. A chamber clean process may be performed while the transfer blades of the spindle-blade assembly are positioned over the multiple wafer stages. Alternatively or additionally, a deposition cycle may be performed while the transfer blades of the spindle-blade assembly are positioned between neighboring pairs of the wafer stages and while a purge gas that flows out of purge gas openings into spaces between the wafer stages.

Methods for stripping and cleaning semiconductor structures

Methods for removing an oxide film and for cleaning silicon-on-insulator structures are disclosed. The methods may involve immersing the silicon-on-insulator structure in a stripping bath to strip an oxide film from the surface of the silicon-on-insulator structure. The stripped silicon-on-insulator structure is immersed in an ozone bath comprising ozone. The ozone-treated silicon-on-insulator structure may be immersed in an SC-1 bath comprising ammonium hydroxide and hydrogen peroxide to clean the structure.

Composition for Removing Polymer

Disclosed is a composition for removing polymers. The composition contains a fluorinated alkyl compound, a polar aprotic solvent, and an acyclic secondary or tertiary amine compound.

Cleaning sheet, manufacturing method of semiconductor device and manufacturing method of cleaning sheet
20220250285 · 2022-08-11 ·

A cleaning sheet is interposed between resin molding mold surfaces and cleans the resin molding mold surfaces with a cleaning resin. The cleaning sheet is composed of a paper material, and is impregnated with a thermosetting resin and cured from the front surface layer to the back surface layer of the paper material.