A cleaning apparatus of a substrate processing apparatus according to an exemplary embodiment includes a nozzle and a scanner. The nozzle ejects a gas toward in an inner wall surface of a processing chamber in which a substrate is processed. The scanner causes the nozzle to scan along the inner wall surface of the processing chamber in the processing chamber.

Disclosed is a composition for removing polymers. The composition contains a fluorinated alkyl compound, a polar aprotic solvent, and an acyclic secondary or tertiary amine compound.

A PERC solar cell capable of improving photoelectric conversion efficiency and a preparation method thereof are provided. The solar cell consecutively includes, from the bottom up, a rear silver electrode (1), a rear aluminum field (2), a rear silicon nitride film (3), a rear aluminum oxide film (4), P-type silicon (5), N-type silicon (6), a front silicon nitride film (7), and a front silver electrode (8). The rear aluminum field (2) is connected to the P-type silicon (5) via a rear aluminum strip (10). The P-type silicon (5) is a silicon wafer of the cell. The N-type silicon (6) is an N-type emitter formed by diffusion via the front surface of the silicon wafer. The front silicon nitride film (7) is deposited on the front surface of the silicon wafer. The rear aluminum oxide film (4) is deposited on the rear surface of the silicon wafer. The rear aluminum oxide film (3) is deposited after the front silicon nitride film (7) is deposited on the silicon wafer, and the rear surface of the silicon wafer is washed before depositing the rear aluminum oxide film (3). The cell can significantly improves passivation effect of the rear aluminum oxide film and improve the open-circuit voltage and short-circuit current of the cell, thereby increasing photoelectric conversion efficiency of the cell.

Provided is a cleaning device that can prevent reduction of an electrostatic clamping force in a vacuum state and can remove foreign matter in a vacuum processing chamber of a semiconductor manufacturing apparatus. The cleaning device includes: a foreign matter attraction unit 4 in which attraction electrodes 3 composed of a pair of electrodes are provided inside an insulator; and an attraction control unit 5 that turns on a control switch to charge the attraction electrodes and generate an electrostatic clamping force on a surface of the insulator to enable attraction of foreign matter, wherein the control switch of the attraction control unit 5 is a remotely-operable switch that is externally operable, and foreign matter in the vacuum processing chamber can be removed by an electrostatic clamping force generated in a vacuum state by turning on the control switch for the cleaning device in a vacuum closed space closed in the vacuum state.

Methods of drying a semiconductor substrate may include applying a drying agent to a semiconductor substrate, where the drying agent wets the semiconductor substrate. The methods may include heating a chamber housing the semiconductor substrate to a temperature above an atmospheric pressure boiling point of the drying agent until a vapor-liquid equilibrium of the drying agent within the chamber has been reached. The methods may further include venting the chamber, where the venting vaporizes the liquid phase of the drying agent from the semiconductor substrate.

In equipment that executes a drying process of forming a liquid membrane on a top surface of a substrate W which is held horizontally and gradually enlarging a dry area from which the liquid membrane has been removed, quality of the drying process is determined. Specifically, first, the top surface of the substrate is repeatedly imaged by an imaging unit during execution of the drying process. Then, it is determined whether the dry area is in a normal state based on a plurality of captured images acquired by the imaging. Accordingly, it is possible to quantitatively determine whether a dry area is in a normal state based on a plurality of captured images.

A substrate processing apparatus includes a substrate processing part that supplies a processing liquid from a processing liquid supply part to a mounted substrate to execute liquid processing, a liquid drainage part that has a recovery channel connected to a storage part that stores the processing liquid and drains the processing liquid used for the liquid processing, and a control unit executes a processing recipe for the liquid processing and a cleaning recipe for cleaning the substrate processing part and the liquid drainage part. The control unit executes a cleaning operation for supplying a cleaning liquid from a cleaning liquid supply part to clean the substrate processing part and the liquid drainage part and subsequently executes a return operation for supplying the processing liquid from the processing liquid supply part to replace the cleaning liquid attached to the substrate processing part and the liquid drainage part with the processing liquid.

The present disclosure provides a method for cleaning a lanthanum gallium silicate wafer which comprises the following steps: at a step of 1, a cleaning solution constituted of phosphorous acid, hydrogen peroxide and deionized water is utilized to clean the lanthanum gallium silicate wafer with a megahertz sound wave; at a step of 2, the cleaned lanthanum gallium silicate wafer is rinsed and dried by spinning; at a step of 3, a cleaning solution constituted of ammonia, hydrogen peroxide and deionized water is utilized to clean the lanthanum gallium silicate wafer with the megahertz sound wave; at a step of 4, the cleaned lanthanum gallium silicate wafer is rinsed and dried by spinning; and at a step of 5, the rinsed and dried wafer is placed in an oven to be baked. The present invention shortens a period of acidic cleaning process and prolongs a period of alkaline cleaning and utilizes a more effective cleaning with megahertz sound wave to replace the conventional ultrasonic cleaning to solve the issue of cleaning the lanthanum gallium silicate wafer after a cutting process and to improve surface cleanliness of the lanthanum gallium silicate wafer to get a better cleaning effect.

Methods and apparatus for cleaning a contaminated metal surface on a substrate, including: exposing a substrate including a dielectric surface and a metal surface including metal nitride residues and metal carbide residues to a process gas including an oxidizing agent to form a substrate including a dielectric surface and a metal surface including metal oxides residues; and exposing a substrate including a dielectric surface and a metal surface including metal oxides residues to a process gas including a reducing agent to form a substrate including a dielectric surface and a substantially pure metal surface.

A system and method for cleaning mesa sidewalls of a template. Curable material may be deposited in a cleaning drop pattern onto a non-yielding imprint field of one of: a device yielding substrate; and a non-yielding substrate. The template may be brought into contact with the curable material. The template has: a recessed surface; a mesa extending from the recessed surface; and wherein the mesa sidewalls connect the recessed surface to the mesa. A relative position of the template to the cleaning drop pattern may be such that the curable material spreads up the mesa sidewalls and does not contact the recessed surface. Cured material may be formed by exposing the curable material to actinic radiation after the curable material has spread up the mesa sidewalls, and before the curable material contacts the recessed surface. The template may be separated from the cured material.