A substrate processing method includes: providing a substrate having a pattern formed on a surface layer thereof; setting a temperature of the substrate such that a change in the pattern becomes a predetermined change amount; forming a reaction layer having a thickness corresponding to the temperature set in the setting on the surface layer of the substrate; and applying energy to the substrate formed with the reaction layer thereby removing the reaction layer from the surface layer of the substrate.

In accordance with some embodiments, a semiconductor fabricating system is provided. The semiconductor fabricating system includes a wafer stage and a brush assembly moveable located below the wafer stage. The brush assembly includes a base plate, an inner brush member and an outer brush member. The inner brush member is positioned on the base plate, and the outer brush member surrounds the inner brush member. Inner grooves in the inner brush member are shallower than outer grooves in the outer brush member. The semiconductor fabricating system also includes a shaft and an actuator. The shaft is connected to the base plate, and the actuator is connected to shaft. The semiconductor fabricating system further include a controller programmed to send electric signals to the actuator to drive the base plate to rotate around a rotation axis.

An apparatus and method for cleaning semiconductor wafer are provided. The apparatus includes a brush module, a swing arm, a rotating actuator and an elevating actuator. The brush module has a brush head for providing mechanical force on a surface of a wafer. An end of the swing arm mounts the brush module. The rotating actuator is connected with the other end of the swing arm. The rotating actuator drives the swing arm to swing across the whole surface of the wafer, which brings the brush head moving across the whole surface of the wafer. The elevating actuator is connected with the other end of the swing arm. The elevating actuator drives the swing arm to rise or descend, which brings the brush module rising or descending. The apparatus cleans the semi-conductor wafer by means of the brush head, which improves the cleaning effect.

According to one embodiment, a substrate treatment method of removing an upper end of a protrusion on a substrate is disclosed. An unevenness is formed on a surface of the substrate. The method can supply a first liquid on the surface of the substrate. The unevenness is formed on the surface. The method can form a protective layer. The protective layer covers the surface of the substrate from the first liquid supplied to the surface of the substrate. The method can supply a second liquid onto the protective layer. In addition the method can physically remove the protective layer which is on the upper end of the protrusion, and can bring the second liquid into contact with the upper end of the protrusion. The protective layer is removed from the upper end of the protrusion.

Methods for removing particles from a wafer for photolithography. A method is provided including providing a semiconductor wafer; attaching a polyimide layer to a backside of the semiconductor wafer; and performing an etch on an active surface of the semiconductor wafer; wherein particles that impinge on the backside during the etch are captured by the polyimide layer. In another method, includes attaching a layer of polyimide film to a backside of a semiconductor wafer; dry etching a material on an active surface of the semiconductor wafer; depositing of an additional layer of material on the active surface of the semiconductor wafer; removing the layer of polyimide film from the backside of the semiconductor wafer; patterning the layer of material using an immersion photolithography process to expose a photoresist on the active surface of the wafer; and repeating the attaching, dry etching, depositing, removing and patterning steps.

A substrate processing system comprising a polishing part, a pre-cleaning region, and a cleaning part. The polishing part performs a Chemical Mechanical Polishing (CMP) process on a substrate. The pre-cleaning region is prepared in the polishing part and allows pre-cleaning performed on the substrate having undergone the polishing process. The cleaning part cleans the substrate pre-cleaned in the pre-cleaning region.

A method for effectively removing minute impurities of 1 μm or less in size that are present on a surface of an aluminum nitride single-crystal substrate without etching the surface includes scrubbing a surface of an aluminum nitride single-crystal substrate using a polymer compound material having lower hardness than an aluminum nitride single crystal, and an alkali aqueous solution having 0.01-1 mass % concentration of potassium hydroxide or sodium hydroxide, the alkali aqueous solution being absorbed in the polymer compound material.

A cleaning material, device, and method for predictably cleaning the contact elements and support hardware of a tester interface, such as a probe card and a test socket, in which the cleaning pad has a predetermined configuration appropriate for the particular pin contact elements and a substrate having a defined functionalized surface topology and geometry which can be introduced into the testing apparatus during the normal testing operations. The cleaning material has a predetermined topography with a plurality of functional 3-dimensional (3D) microstructures that provide performance characteristics which are not possible with a non-functionalized and flat surface.

A cleaning apparatus for cleaning a cleaning tool that scrub-cleans a substrate includes a cleaning body. The cleaning body includes a contact portion configured to come into contact with the cleaning tool, and the contact portion includes a suction area configured to remove foreign matter from the cleaning tool.

The present method comprises providing a flexible web substrate (e.g., polymeric flexible web substrates) that forms at least part of a component of a device, coating so as to wet-out on and cover all or a substantial portion of a major surface on one side or both sides of the flexible web substrate with flowable polymeric material, while the flexible web substrate is moving in a down-web direction, and solidifying the polymeric material so as to form one cleaning layer on the major surface of one side or both sides of the flexible web substrate. The present invention can be utilized in a continuous in-line manufacturing process. In applications of the present invention where the flexible web substrate will not form a component of a device, the present invention broadly provides a method for cleaning particles from a flexible web of indefinite length. Each cleaning layer forms a substantially adhesive bond to the major surface that is readily removable without damaging or leaving a substantial residue of cleaning layer material on the major surface. A substantial number of the particles that were on this major surface are captured by and removable with the cleaning layer.