There is provided a substrate processing apparatus comprising a liquid amount detecting part configured to detect a liquid amount of a liquid film formed on a substrate; and a coating state detecting part configured to detect a coating state of the substrate with the liquid film formed thereon.

A substrate processing method of the invention includes: a first step of introducing a processing fluid in a gas phase into a chamber housing a substrate; a second step of changing the processing fluid in the chamber from the gas phase to a supercritical state without intervention of a liquid phase; a third step of changing the processing fluid in the chamber from the supercritical state to a liquid phase; a fourth step of changing the processing fluid in the chamber from the liquid phase to a supercritical state; and a fifth step of changing the processing fluid in the chamber from the supercritical state to a gas phase without intervention of a liquid phase and discharging the processing fluid from the chamber.

A substrate drying device includes: an upper chamber body including an inlet configured to introduce supercritical fluid into a chamber space; a lower chamber body including an outlet configured to discharge the supercritical fluid out of the chamber space; and a plurality of vibration devices including a plurality of vibration modules configured to generate ultrasonic waves having different frequencies from each other, and substrate holders arranged on the plurality of vibration modules and configured to hold a wafer, wherein the plurality of vibration devices are arranged in the chamber space.

Provided is an apparatus and method for supplying a fluid. The substrate treating apparatus comprises a treating unit for treating a substrate and a fluid supply unit for supplying fluid to the treating unit, wherein the fluid supply unit comprises a supply tank in which the fluid is stored, a supply line connecting the supply tank and the treating unit to supply the fluid from the supply tank to the treating unit, a filter installed on the supply line, and an exhaust line branching from the supply line, wherein a branch point of the exhaust line in the supply line is located upstream of the filter.

Provided is a method for treating a substrate which removes particle within a concave portion on a substrate having a thin film on which a pattern having the concave portion on its upper surface is formed. The substrate treating method according the present invention comprises a penetration step for penetrating a treatment liquid containing supercritical organic chemical solution into the concave portion; and a heating step for heating the substrate after the penetration step.

According to one embodiment, a method for cleaning a substrate includes first cleaning process and second cleaning process. The first cleaning process subjects a substrate to a first cleaning method. The second cleaning process subjects the substrate to a second cleaning method that is different from the first cleaning method and is subsequent to the first cleaning process. The first cleaning method includes at least one of acidic cleaning or alkaline cleaning. The second cleaning method includes freeze cleaning.

To dry a substrate formed with a pattern on a front surface satisfactorily and with excellent drying performance, a substrate processing method comprises: a liquid film formation step of forming a liquid film of a processing liquid, in which cyclohexanone oxime is dissolved in a solvent, on a front surface of a substrate formed with a pattern by supplying the processing liquid to the front surface of the substrate; a solidified film formation step of forming a solidified film of the cyclohexanone oxime by solidifying the liquid film of the processing liquid; and a sublimation step of removing the solidified film from the front surface of the substrate by sublimating the solidified film.

Provided is a substrate treating apparatus comprising: a support unit for supporting the substrate; a discharge unit for discharging an organic solvent to the substrate supported on the support unit; and a solvent supply unit for supplying the organic solvent in a liquid state to the discharge unit at atmospheric pressure to a temperature higher than the boiling point of the organic solvent.

Embodiments of the invention generally relate to a method of cleaning a substrate and a substrate processing apparatus that is configured to perform the method of cleaning the substrate. More specifically, embodiments of the present invention relate to a method of cleaning a substrate in a manner that reduces or eliminates the negative effects of line stiction between semiconductor device features. Other embodiments of the present invention relate to a substrate processing apparatus that allows for cleaning of the substrate in a manner that reduces or eliminates line stiction between semiconductor device features formed on the substrate.

Provided is a substrate processing apparatus including a processing container configured to receive a substrate on which a dry preventing liquid is filled and perform a supercritical processing on the substrate; a fluid supply line connected to the processing container and configured to supply a processing fluid to the processing container; a fluid discharge line connected to the processing container and configured to discharge the processing fluid in the processing container; and a first circulation line connected to an upstream side and a downstream side of the processing container, and provided independently from the fluid supply line and the fluid discharge line to circulate the processing fluid in the processing container. The first circulation line is provided with a first reservoir tank that receives the processing fluid from the processing container and has a capacity larger than that of the processing container.