A forming method includes atomizing a raw material solution to form a raw material mist, mixing raw material mist and carrier gas to form a gas mixture, placing substrate on a stage, forming a film on the substrate by supplying gas mixture to substrate from a gas mixture supply means, and exhausting gas mixture after the film formation by exhaust means, in which a channel plate is arranged above substrate and faces the substrate via a space, a gas mixture flow is formed in the space above the substrate flowing linearly from the gas mixture supply means to the exhaust means such that the gas mixture flow flows along at least a part of a main surface of the substrate, and in the forming step and the exhausting step, at least a temperature T1 of the gas mixture supply means, and a temperature T2 of the channel plate are controlled.

A semiconductor device with favorable reliability is provided. The semiconductor device includes a first insulator; a second insulator positioned over the first insulator; an oxide positioned over the second insulator; a first conductor and a second conductor positioned apart from each other over the oxide; a third insulator positioned over the oxide, the first conductor, and the second conductor; a third conductor positioned over the third insulator and at least partly overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned to cover the oxide, the first conductor, the second conductor, the third insulator, and the third conductor; a fifth insulator positioned over the fourth insulator; and a sixth insulator positioned over the fifth insulator. An opening reaching the second insulator is formed in at least part of the fourth insulator; the fifth insulator is in contact with the second insulator through the opening; and the first insulator, the fourth insulator, and the sixth insulator have a lower oxygen permeability than the second insulator.

Described herein is a technique capable of suppressing variations or deterioration in a processing rate between a plurality of substrates due to temperature. According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel constituting at least a part of a process chamber where a substrate is processed; a plasma generator comprising a coil provided to be wound around an outer periphery of the process vessel and a high frequency power supply configured to supply high frequency power to the coil; a substrate support provided in the process chamber and below a lower end of the coil; a heater provided in the substrate support; and a temperature sensor configured to measure a temperature of a portion of the process vessel located above an upper end of the coil.

A system for processing semiconductor wafers, the system including: a processing chamber; a heat source; a substrate holder configured to expose a semiconductor wafer to the heat source; a first electrode configured to be detachably coupled to a first major surface of a semiconductor wafer; and a second electrode coupled to the substrate holder, the first electrode and the second electrode together configured to apply an electric field in the semiconductor wafer.

A light emitting element and display device are disclosed. In one example, a light emitting element includes a first electrode formed on a base body. A first insulation layer is formed on the base body and the first electrode and has an aperture portion in which a part of the first electrode is exposed. A second insulation layer is formed on the first insulation layer and has a protruding end portion protruding from the aperture portion. A third insulation layer is formed on the second insulation layer and has an end portion recessed from the protruding end portion. A charge injection/transport layer is formed over the second insulation layer and the third insulation layer. An organic layer includes a light emitting layer, and a second electrode formed on the organic layer. At least a part of the charge injection/transport layer is discontinuous at the protruding end portion.

A multi-scale manufacturing system comprising a centrally located multi-axis and multi-dimensional first manipulating component associated with a housing for manipulating a substrate and a template, a control subsystem coupled to the first manipulating component for controlling movement thereof, a pre-alignment subsystem for pre-aligning the substrate and the template, an assembly station for applying nanomaterial to the template, an alignment station for aligning the template and the substrate together to form a workpiece assembly, and a transfer subsystem for applying pressure to the workpiece assembly for transferring the nanomaterial from the template to the substrate.

A method for producing a GaN crystal that includes: (i) a seed crystal preparation step of preparing a GaN seed crystal having one or more facets selected from a {10-10} facet and a {10-1-1} facet; and (ii) a growth step of growing GaN from vapor phase on a surface comprising the one or more facets of the GaN seed crystal using GaCl.sub.3 and NH.sub.3 as raw materials.

A gas shower head includes a plate, a plurality of central holes disposed in a central region of the plate, and a plurality of peripheral holes disposed in a peripheral region of the plate. The central holes are configured to form a first portion of a material film, and the peripheral holes are configured to form a second portion of the material film. A hole density in the peripheral region is greater than a hole density in the central region. The first portion of the material film includes a first thickness corresponding to the hole density in central region, and the second portion of the material film includes a second thickness corresponding to the hole density in peripheral region and greater than the first thickness.

A substrate processing method includes: maintaining an atmosphere in contact with at least a surface of a substrate on which a first material that is a metal and a second material that is a material other than the first material are exposed, as a deoxidized atmosphere; supplying a film forming material, which selectively forms a film on the first material among the first material and the second material, to the surface of the substrate in a state where the deoxidized atmosphere is maintained by the maintaining; performing a surface treatment of the second material in a state where the film is formed on a surface of the first material supplied in the supplying the film forming material; and removing the film from the surface of the first material after the performing the surface treatment.

Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes a semiconductive substrate. A donor-supply layer is over the semiconductive substrate. The donor-supply layer includes a top surface. A gate structure, a drain, and a source are over the donor-supply layer. A passivation layer covers conformably over the gate structure and the donor-supply layer. A gate electrode is over the gate structure. A field plate is disposed on the passivation layer between the gate electrode and the drain. The field plate includes a bottom edge. The gate electrode having a first edge in proximity to the field plate, the field plate comprising a second edge facing the first edge, a horizontal distance between the first edge and the second edge is in a range of from about 0.05 to about 0.5 micrometers.