The present disclosure relates to a patterned structure, the structure comprising: i) a substrate, ii) a first layer on top of the substrate, comprising a filler material and a guiding material, wherein at least a top surface of the first layer comprises one or more zones of filler material and one or more zones of guiding material, and iii) a second layer on top of the first layer comprising a pattern of a first material, the pattern being either aligned or anti-aligned with the underlying one or more zones of guiding material; wherein the first material comprises a metal or a ceramic material and wherein the guiding material and the filler material either both comprise or both do not comprise the metal or ceramic material.

The present invention relates to a method for the synthesis and utilization of block copolymer can that form sub-10 nm lamella nanostructures. Such methods have many uses including multiple applications in the semiconductor industry including production of templates for nanoimprint lithography.

The present invention is to form an organic film on a substrate having a pattern formed on a front surface thereof and configured to: apply an organic material onto the substrate; then thermally treat the organic material to form an organic film on the substrate; and then perform ultraviolet irradiation processing on the organic film to remove a surface of the organic film down to a predetermined depth, thereby appropriately and efficiently form the organic film on the substrate.

A method is presented for forming a semiconductor structure. The method includes forming a plurality of vertical fins over a semiconductor layer formed over a substrate, depositing an oxide over the plurality of fins, and applying a cutting mask over a portion of the plurality of fins. The method further includes removing the oxide from the exposed portion of the plurality of fins, depositing a replacement gate stack, and etching portions of the replacement gate stack to remove exposed fins, the exposed fins forming recesses within the semiconductor layer. The method further includes depositing a spacer over the exposed fins and the recesses formed by the removed fins. A portion of the plurality of fins are cut during etching of the replacement gate stack and a portion of the oxide is removed before deposition of the replacement gate stack.

Disclosed is a pattern forming method including: forming an acrylic resin layer on an underlayer; forming an intermediate layer on the acrylic resin layer; forming a patterned EUV resist layer on the intermediate layer; forming a pattern on the acrylic resin layer by etching the intermediate layer and the acrylic resin layer with the EUV resist layer as an etching mask; removing the EUV resist layer and the intermediate layer after the pattern is formed on the acrylic resin layer; and smoothing a surface of the acrylic resin layer after the EUV resist layer and the intermediate layer are removed.

The present invention provides an imprint apparatus including a supply device including discharge ports which discharge a imprint material, and configured to supply the imprint material onto a substrate via the discharge ports, and a controller configured to cause, if there is a defective discharge port of the discharge ports, the supply device to discharge the imprint material from another discharge port, different from the defective discharge port, of the discharge ports, wherein a mold for the molding includes a line pattern, and the controller is configured to control the supply device such that an interval between supply positions of the imprint material do not become larger in a direction orthogonal to a direction along the line pattern than that before change from the defective discharge port to the other discharge port.

According to one embodiment, an imprint method is provided. In the imprint method, a template including a mechanoluminescent material is brought into contact with a resist on a substrate. The posture of the template is adjusted on the basis of the intensity of mechanoluminescence from the template. Light is emitted to the resist to harden the resist. The template is separated from the resist.

Techniques disclosed herein include methods for creating a directed self-assembly tunable neutral layer that works with multiple different block copolymer materials. Techniques herein can include depositing a neutral layer and then post-processing this neutral layer to tune its characteristics so that the neutral layer is compatible with a particular block copolymer scheme or schemes. Post-processing herein of such a neutral layer can modify a ratio of pi and sigma bonds in a given carbon film or other film to approximate a given self-assembly film that will be deposited on this neutral layer. Accordingly, a generic or single material can be used for a neutral layer and modified to match a given block copolymer to be deposited.

A photosensitive resin composition, an organic light emitting display device, and method for manufacturing an organic light emitting device, the composition including a photosensitive compound; a solvent; and a silsesquioxane-based copolymer, the silsesquioxane-based copolymer being obtained by copolymerizing a compound represented by the following Chemical Formula 1 with at least one of a compound represented by the following Chemical Formula 2, and a compound represented by the following Chemical Formula 3;

R.sub.1-R.sub.2—Si(R.sub.3).sub.3  [Chemical Formula 1]

R.sub.4—Si(R.sub.5).sub.3  [Chemical Formula 2]

Si(R.sub.6).sub.4.  [Chemical Formula 3]

An imprint apparatus includes a template holder configured to hold a template that has a pattern formed thereon, the pattern to be transferred to a substrate by an imprinting process, a stage configured to hold the substrate, a liquid ejecting device configured to eject a resin precursor onto the substrate, an electric field plate configured to apply an electric field to the resin precursor on the substrate, and an electric field controller configured to apply a voltage to the electric field plate.