Embodiments of the invention include microelectronic devices and methods of forming such devices. In an embodiment, a microelectronic device, includes one or more pre-patterned features formed into a interconnect layer, with a conformal barrier layer formed over the first wall, and the second wall of one or more of the pre-patterned features. A photoresist layer may formed over the barrier layer and within one or more of the pre-patterned features and a conductive via may be formed in at least one of the pre-patterned features.

There is provided a method of performing an analysis of a defect in a pattern of an imprint material on a substrate that has undergone an imprint process of transferring a pattern of a mold onto the substrate. The method includes obtaining a defect distribution of the pattern on the substrate, obtaining map information indicating an arrangement of the imprint material on the substrate, and determining a type of a defect based on a relationship between a position of the defect in the defect distribution and a position of a gap in the imprint material generated in a process of spreading the imprint material by the imprint process, wherein the position of the gap is predicted based on the map information.

A polymer, an organic layer composition, an organic layer, and a method of forming patterns, the polymer including a moiety represented by the following Chemical Formula 1: ##STR00001##

The present invention provides a positive photosensitive resin composition containing (A) a polymer compound containing a siloxane chain, the polymer compound having a repeating unit shown by the general formula (1) and a weight average molecular weight of 3,000 to 500,000, (B) a photosensitive material capable of generating an acid by light and increasing a dissolution rate in an aqueous alkaline solution, (C) a crosslinking agent, and (D) a solvent. There can be provided a positive photosensitive resin composition that can remedy the problem of delamination caused on a metal wiring such as Cu and Al, an electrode, and a substrate, especially on a substrate such as SiN, and can form a fine pattern having a forward tapered shape without generating a scum and a footing profile in the pattern bottom and on the substrate when a widely used 2.38% TMAH aqueous solution is used as the developer.

##STR00001## ##STR00002##

Disclosed is a method for lithography patterning. The method includes providing a substrate, forming a deposition enhancement layer (DEL) over the substrate, and flowing an organic gas near a surface of the DEL. During the flowing of the organic gas, the method further includes irradiating the DEL and the organic gas with a patterned radiation. Elements of the organic gas polymerize upon the patterned radiation, thereby forming a resist pattern over the DEL. The method further includes etching the DEL with the resist pattern as an etch mask, thereby forming a patterned DEL.

Multifunctional molecules for selective polymer formation on conductive surfaces, and the resulting structures, are described. In an example, an integrated circuit structure includes a lower metallization layer including alternating metal lines and dielectric lines above the substrate. A molecular brush layer is on the metal lines of the lower metallization layer, the molecular brush layer including multifunctional molecules. A triblock copolymer layer is above the lower metallization layer. The triblock copolymer layer includes a first segregated block component over the dielectric lines of the lower metallization layer, and alternating second and third segregated block components on the molecular brush layer on the metal lines of the lower metallization layer, where the third segregated block component is photosensitive.

Provided are: a composition for forming an underlayer film for imprinting, which contains a high-molecular-weight compound having a polymerizable group, a chelating agent, and a solvent, and a method for producing the same; a kit including the composition for forming an underlayer film; a pattern producing method using the composition for forming an underlayer film; and a method for manufacturing a semiconductor element, which includes the pattern producing method as a step.

A method for selectively modifying a base material surface, includes applying a composition on a surface of a base material to form a coating film. The coating film is heated. The base material includes a surface layer which includes a first region including silicon. The composition includes a first polymer and a solvent. The first polymer includes at an end of a main chain or a side chain thereof, a group including a first functional group capable of forming a bond with the silicon. The first region preferably contains a silicon oxide, a silicon nitride, or a silicon oxynitride. The base material preferably further includes a second region that is other than the first region and that contains a metal; and the method preferably further includes, after the heating, removing with a rinse agent a portion formed on the second region, of the coating film.

In order to provide an imprint device capable of reducing pattern defects, the imprint device which brings a mold into contact with an imprint material on a substrate and transfers a shape of a surface of the mold onto the substrate includes: a mold holding part which holds the mold; a substrate holding part which holds the substrate; and a measuring unit which measures a contact force generated when a part of the mold or the mold holding part is brought into contact with a predetermined contact part, wherein the contact part is installed at a position in a predetermined plane different from a position in the predetermined plane of the substrate held by the substrate holding part and is installed at a height position corresponding to a height of a surface of the substrate held by the substrate holding part.

Semiconductor devices, integrated circuits and methods of forming the same are provided. In one embodiment, a semiconductor device includes a metal-insulator-metal structure which includes a bottom conductor plate layer including a first opening and a second opening, a first dielectric layer over the bottom conductor plate layer, a middle conductor plate layer over the first dielectric layer and including a third opening, a first dummy plate disposed within the third opening, and a fourth opening, a second dielectric layer over the middle conductor plate layer, and a top conductor plate layer over the second dielectric layer and including a fifth opening, a second dummy plate disposed within the fifth opening, a sixth opening, and a third dummy plate disposed within the sixth opening. The first opening, the first dummy plate, and the second dummy plate are vertically aligned.