A behavior recognition device for recognizing behaviors of a semiconductor manufacturing apparatus includes a storage device and a control unit. The storage device is configured to store log data of the semiconductor manufacturing apparatus. The control unit is cooperatively connected to the storage device, and configured to build a transition state model based on the log data to analyze behaviors related to wafer transfer sequences and manufacturing operations of the semiconductor manufacturing apparatus.

A method includes determining, based on sensor data, that one or more components of substrate processing equipment are within a pre-failure window that is after a normal operation window. Corresponding data points in the normal operation window are substantially stable along a first health index value. The corresponding data points in the pre-failure window increase from the first health index value to a peak at a second health index value. Responsive to the determining that the one or more components are within the pre-failure window, the method further includes causing performance of a corrective action associated with the one or more components of the substrate processing equipment.

Provided are a thermoelectric material, a method of fabricating the same, and a thermoelectric device. The thermoelectric material includes a first material layer including a chalcogen element; and a second material layer including a reaction compound between the chalcogen element and a metal element, wherein the thermoelectric material has a structure in which the first material layer is inserted in the second material layer.

Provided is a field shaping multi-well detector and method of fabrication thereof. The detector is configured by depositing a pixel electrode on a substrate, depositing a first dielectric layer, depositing a first conductive grid electrode layer on the first dielectric layer, depositing a second dielectric layer on the first conductive grid electrode layer, depositing a second conductive grid electrode layer on the second dielectric layer, depositing a third dielectric layer on the second conductive grid electrode layer, depositing an etch mask on the third dielectric layer. Two pillars are formed by etching the third dielectric layer, the second conductive grid electrode layer, the second dielectric layer, the first conductive grid electrode layer, and the first dielectric layer. A well between the two pillars is formed by etching to the pixel electrode, without etching the pixel electrode, and the well is filled with a-Se.

A method for forming a semiconductor device and a semiconductor device formed by the method are disclosed. In an embodiment, the method includes depositing a dummy dielectric layer on a fin extending from a substrate; depositing a dummy gate seed layer on the dummy dielectric layer; reflowing the dummy gate seed layer; etching the dummy gate seed layer; and selectively depositing a dummy gate material over the dummy gate seed layer, the dummy gate material and the dummy gate seed layer constituting a dummy gate.

A substrate liquid processing apparatus includes a processing liquid storage unit configured to store a processing liquid therein; a processing liquid drain unit configured to drain the processing liquid from the processing liquid storage unit; and a control unit. The control unit performs a first control in a constant concentration mode in which a concentration of the processing liquid in the processing liquid storage unit is regulated to a predetermined set concentration and a second control in a concentration changing mode in which the concentration of the processing liquid is changed. In the second control, a set concentration after concentration change is compared with a set concentration before the concentration change, and when the set concentration after the concentration change is lower, the control unit controls the processing liquid drain unit to start draining of the processing liquid.

A substrate transport apparatus auto-teach system for auto-teaching a substrate station location, the system including a frame, a substrate transport connected to the frame, the substrate transport having an end effector configured to support a substrate, and a controller configured to move the substrate transport so that the substrate transport biases the substrate supported on the end effector against a substrate station feature causing a change in eccentricity between the substrate and the end effector, determine the change in eccentricity, and determine the substrate station location based on at least the change in eccentricity between the substrate and the end effector.

A substrate processing method comprises: a liquid film forming step of forming a liquid film of a rinsing liquid on a pattern forming surface of a substrate formed with a pattern; a liquid pool forming step of forming a liquid pool of an organic solvent by supplying the organic solvent to the liquid film near a center of rotation of the substrate; a replacement step of replacing the rinsing liquid constituting the liquid film with the organic solvent by supplying the organic solvent to the liquid pool while rotating the substrate at a rotational speed higher than in the liquid pool forming step; an application step of applying a filler solution to the pattern forming surface coated with the organic solvent; and a filling step of causing a filler contained in the filler solution and applied to the pattern forming surface to sink and filling concave portions of the pattern with the filler.

A substrate processing method comprises: a liquid film forming step of forming a liquid film of a rinsing liquid on a pattern forming surface of a substrate formed with a pattern; a liquid pool forming step of forming a liquid pool of an organic solvent by supplying the organic solvent to the liquid film near a center of rotation of the substrate; a replacement step of replacing the rinsing liquid constituting the liquid film with the organic solvent by supplying the organic solvent to the liquid pool while rotating the substrate at a rotational speed higher than in the liquid pool forming step; an application step of applying a filler solution to the pattern forming surface coated with the organic solvent; and a filling step of causing a filler contained in the filler solution and applied to the pattern forming surface to sink and filling concave portions of the pattern with the filler.

A substrate processing apparatus according to the present disclosure includes a holding unit, a nozzle, a driving unit, and a controller. The holding unit holds a substrate. The nozzle supplies a processing liquid to the substrate held on the holding unit. The driving unit moves the nozzle. The controller controls the driving unit, so as to move the nozzle while supplying the processing liquid to the substrate from the nozzle. Further, the controller controls the driving unit based on recipe information including step information including positions of first and second points above the substrate, total time for moving the nozzle between the first and second points, and a moving speed of the nozzle, so as to cause reciprocation of the nozzle.