A substrate processing apparatus according to the present disclosure includes a holding unit, a nozzle, a driving unit, and a controller. The holding unit holds a substrate. The nozzle supplies a processing liquid to the substrate held on the holding unit. The driving unit moves the nozzle. The controller controls the driving unit, so as to move the nozzle while supplying the processing liquid to the substrate from the nozzle. Further, the controller controls the driving unit based on recipe information including step information including positions of first and second points above the substrate, total time for moving the nozzle between the first and second points, and a moving speed of the nozzle, so as to cause reciprocation of the nozzle.

A wafer cleaning apparatus for cleaning a circumferential edge of a wafer includes a cleaning unit that jets water toward the circumferential edge of the wafer from an outer side of the circumferential edge of the wafer held by a holding surface of a holding table, to clean the circumferential edge of the wafer. The cleaning unit includes a first nozzle that jets the water to the circumferential edge of the wafer from an outer side of the circumferential edge of the wafer in a direction parallel to the holding surface, a second nozzle that jets the water to the circumferential edge of the wafer in a direction of 45 degrees downward relative to the holding surface, and a third nozzle that jets the water to the circumferential edge of the wafer in a direction of 45 degrees upward relative to the holding surface.

A substrate processing method includes a substrate holding step of holding a substrate in a horizontal attitude, a chemical liquid supply step of supplying a chemical liquid to a main surface of the substrate while rotating the substrate around a vertical rotational axis that passes through a central portion of the substrate, a processing-height maintaining step of maintaining a cylindrical first guard that captures a chemical liquid expelled from the substrate at a processing height position in parallel with the chemical liquid supply step, and a cleaning-height maintaining step of maintaining the first guard at a cleaning height position set below the processing height position in parallel with the chemical liquid supply step after the processing-height maintaining step.

A substrate processing apparatus includes a substrate holder, a first cleaning body, a first moving mechanism, a second cleaning body, a second moving mechanism, and a controller. The first cleaning body cleans one of the upper surface and the lower surface of the substrate held by the substrate holder by ejecting fluid thereto or by coming into contact therewith. The second cleaning body cleans the other one of the upper surface and the lower surface of the substrate held by the substrate holder by coming into contact therewith. The controller controls the first moving mechanism and the second moving mechanism to perform a both-surface cleaning processing in which the first cleaning body which ejects the fluid to one surface or is in contact with the upper surface and the second cleaning body which is in contact with the lower surface are horizontally moved in synchronization with each other.

The present invention relates to a ceramic heater. The ceramic heater of the present invention comprises: a heater plate in which a heating element is disposed and which is made of a ceramic material; a shaft which has a tubular shape with a through-hole and is coupled to the bottom surface of the heater plate and in which a rod for supplying power to the heating element through the through-hole is received; and a continuous or discontinuous air pocket which is provided in a joint with which the heater plate and the shaft come into contact and by which the heater plate and the shaft are coupled to each other, wherein the air pocket is formed along the joining surface of the joint.

A method of fabricating semiconducting tellurium (Te) nanomesh. The method includes the steps of preparing a substrate, vaporizing Te powders under a first temperature; and growing Te nanomesh on the substrate using the vaporized Te powders under a second temperature. The first temperature is higher than the second temperature. The rationally designed nanomesh exhibits exciting properties, such as micrometer-level patterning capacity, excellent field-effect hole mobility, fast photoresponse in the optical communication region, and controllable electronic structure of the mixed-dimensional heterojunctions.

A method of fabricating semiconducting tellurium (Te) nanomesh. The method includes the steps of preparing a substrate, vaporizing Te powders under a first temperature; and growing Te nanomesh on the substrate using the vaporized Te powders under a second temperature. The first temperature is higher than the second temperature. The rationally designed nanomesh exhibits exciting properties, such as micrometer-level patterning capacity, excellent field-effect hole mobility, fast photoresponse in the optical communication region, and controllable electronic structure of the mixed-dimensional heterojunctions.

A workpiece processing system has a cooling chamber enclosing a chamber volume. A workpiece support within the cooling chamber supports a workpiece having a material with an outgassing temperature, above which, the material outgases an outgas material at an outgassing rate that is toxic to personnel. A cooling apparatus selectively cools the workpiece to a predetermined temperature. A vacuum source and purge gas source selectively evacuates and selectively provides a purge gas to the chamber volume. A controller controls the cooling apparatus to cool the workpiece to the predetermined temperature, where the one or more materials are cooled below the outgassing temperature. The vacuum source and purge gas source are controlled to provide a predetermined heat transfer rate while removing the respective outgas material from the chamber volume.

A method of semiconductor packaging includes providing a plurality of substrate units including at least one good known substrate unit on a first adhesive layer of a first carrier. The method includes applying a first activating source to the first adhesive layer in situ such that the first adhesive layer releases from the at least one good known substrate unit without physical contact by an outside source to the at least one good known substrate unit. The method includes transferring the at least one good known substrate unit onto a second adhesive layer of a second carrier, attaching at least one die to the at least one good known substrate unit, and applying a second activating source to the second adhesive layer such that the second adhesive layer releases from the at least one good known substrate unit.

An electrode array including a substrate. The electrode array includes a first plurality of electrodes disposed above a first zone of the substrate, wherein the first plurality of electrodes has a first range of spacing. The electrode array further includes a second plurality of electrodes disposed above a second zone of the substrate, wherein the second plurality of electrodes has a second range of spacing that is less than the first range of spacing.