A method for non-contact measurement of stress in a thin-film deposited on a substrate is disclosed. The method may include measuring first topography data of a substrate having a thin-film deposited thereupon. The method may also include comparing the first topography data with second topography data of the substrate that is measured prior to thin-film deposition. The method may further include obtaining a vertical displacement of the substrate based on the comparison between the first topography data and the second topography data. The method may also include detecting a stress value in the thin-film deposited on the substrate based on a fourth-order polynomial equation and the vertical displacement.

A method for non-contact measurement of stress in a thin-film deposited on a substrate is disclosed. The method may include measuring first topography data of a substrate having a thin-film deposited thereupon. The method may also include comparing the first topography data with second topography data of the substrate that is measured prior to thin-film deposition. The method may further include obtaining a vertical displacement of the substrate based on the comparison between the first topography data and the second topography data. The method may also include detecting a stress value in the thin-film deposited on the substrate based on a fourth-order polynomial equation and the vertical displacement.

The wafer having a retardation distribution measured with a light having a wavelength of 520 nm, wherein an average value of the retardation is 38 nm or less, wherein the wafer comprises a micropipe, and wherein a density of the micropipe is 1.5/cm.sup.2 or less, is disclosed.

The first object of the invention is directed to field-effect gate transistor comprising (a) a substrate, (b) a source terminal, (c) a drain terminal, and (d) a channel between the source terminal and the drain terminal, the channel being a layer of Cu.sub.xCr.sub.yO.sub.2 in which the y/x ratio is superior to 1. The field-effect gate transistor is remarkable in that the channel of Cu.sub.xCr.sub.yO.sub.2 presents a gradient of holes concentration. The second object of the invention is directed to a method for laser annealing a field-effect gate transistor in accordance with the first object of the invention.

A method for planarizing a wafer surface comprising: providing a first wafer and a second wafer, oxidizing the first wafer to form an oxide layer on a surface of the first wafer, injecting a foaming ion to form a peeling layer in the first wafer, bonding the first wafer and the second wafer to form a bonded wafer by using the oxide layer as an intermediate layer, raising a temperature to cause the bonded wafer to crack in the peeling layer, a portion of the first wafer remaining on the surface of the oxide layer being a top silicon layer, and the oxide layer being an insulating buried layer, etching a surface of the top silicon layer with a mixed gas of hydrogen and HCl, wherein the mixed gas is injected from a side of the wafer, wherein a flow rate of the mixed gas in an edge region is less than a flow rate of the mixed gas in a central region.

A method for non-contact measurement of stress in a thin-film deposited on a substrate is disclosed. The method may include measuring first topography data of a substrate having a thin-film deposited thereupon. The method may also include comparing the first topography data with second topography data of the substrate that is measured prior to thin-film deposition. The method may further include obtaining a vertical displacement of the substrate based on the comparison between the first topography data and the second topography data. The method may also include detecting a stress value in the thin-film deposited on the substrate based on a fourth-order polynomial equation and the vertical displacement.

A method for non-contact measurement of stress in a thin-film deposited on a substrate is disclosed. The method may include measuring first topography data of a substrate having a thin-film deposited thereupon. The method may also include comparing the first topography data with second topography data of the substrate that is measured prior to thin-film deposition. The method may further include obtaining a vertical displacement of the substrate based on the comparison between the first topography data and the second topography data. The method may also include detecting a stress value in the thin-film deposited on the substrate based on a fourth-order polynomial equation and the vertical displacement.

The present embodiments provide a transparent electrode having a laminate structure of: a first metal oxide layer having an amorphous structure and electroconductivity, a metal layer made of a metallic material containing silver or copper, a second metal oxide layer having an amorphous structure and electroconductivity, and a third metal oxide layer having an amorphous structure and continuity, stacked in this order.

A flexible display device includes: a flexible substrate; a thin-film transistor on the flexible substrate; a passivation film covering the thin-film transistor; and a display element on the passivation film and electrically connected to the thin-film transistor. The passivation film includes a material exhibiting a shear-thickening phenomenon.

An electronic device includes a semiconductor memory, wherein the semiconductor memory comprises a plurality of memory stacks neighboring each other in a first direction and a second direction, the second direction intersecting the first direction, a plurality of first liner layers covering sidewalls of memory stacks that neighbor each other in the second direction, the plurality of first liner layers extending in the second direction, a plurality of first air gaps located in spaces covered by the first liner layers, and a plurality of second air gaps located between each pair of memory stacks that neighbor each other in the first direction, the plurality of second air gaps extending in the second direction.