A semiconductor device package and a method of manufacturing the same are provided. The semiconductor device package includes a first module, a second module, a first intermediate circuit layer, a first conductive transmission path and a second conductive transmission path. The second module is stacked on the first module. The first intermediate circuit layer is arranged between the first module and the second module. The first conductive transmission is configured to electrically connect the first semiconductor module with the first intermediate circuit layer. The second conductive transmission path is configured to electrically connect the first intermediate circuit layer with the second semiconductor module.

A semiconductor device package and a method of manufacturing the same are provided. The semiconductor device package includes a first module, a second module, a first intermediate circuit layer, a first conductive transmission path and a second conductive transmission path. The second module is stacked on the first module. The first intermediate circuit layer is arranged between the first module and the second module. The first conductive transmission is configured to electrically connect the first semiconductor module with the first intermediate circuit layer. The second conductive transmission path is configured to electrically connect the first intermediate circuit layer with the second semiconductor module.

A support glass substrate of the present invention is a support glass substrate for supporting a substrate to be processed, the support glass substrate including lithium aluminosilicate-based glass, having a content of Li.sub.2O of from 0.02 mol % to 25 mol % in a glass composition, and having an average linear thermal expansion coefficient within a temperature range of from 30° C. to 380° C. of 38×10.sup.−7/° C. or more and 160×10.sup.−7/° C. or less.

A component carrier includes a stack with an electrically conductive layer structure and an electrically insulating layer structure. The electrically conductive layer structure having a first plating structure and a pillar. The pillar has a seed layer portion on the first plating structure and a second plating structure on the seed layer portion. A method of manufacturing such a component carrier and an arrangement including such a component carrier are also disclosed.

Embodiments of three-dimensional (3D) memory devices with embedded dynamic random-access memory (DRAM) and methods for forming the 3D memory devices are disclosed. In an example, a method for operating a 3D memory device is disclosed. The 3D memory device includes an input/output circuit, an array of embedded DRAM cells, and an array of 3D NAND memory strings in a same chip. Data is transferred through the input/output circuit to the array of embedded DRAM cells. The data is buffered in the array of embedded DRAM cells. The data is stored in the array of 3D NAND memory strings from the array of embedded DRAM cells.

Embodiments of three-dimensional (3D) memory devices with embedded dynamic random-access memory (DRAM) and methods for forming the 3D memory devices are disclosed. In an example, a method for operating a 3D memory device is disclosed. The 3D memory device includes an input/output circuit, an array of embedded DRAM cells, and an array of 3D NAND memory strings in a same chip. Data is transferred through the input/output circuit to the array of embedded DRAM cells. The data is buffered in the array of embedded DRAM cells. The data is stored in the array of 3D NAND memory strings from the array of embedded DRAM cells.

Three-dimensional (3D) memory devices with 3D phase-change memory (PCM) and methods for forming and operating the 3D memory devices are disclosed. In an example, a 3D memory device includes a first semiconductor structure including an array of NAND memory cells, and a first bonding layer including first bonding contacts. The 3D memory device also further includes a second semiconductor structure including a second bonding layer including second bonding contacts, a semiconductor layer and a peripheral circuit and an array of PCM cells between the second bonding layer and the semiconductor layer. The 3D memory device further includes a bonding interface between the first and second bonding layers. The first bonding contacts are in contact with the second bonding contacts at the bonding interface.

Microwave packaging uses signal vias and interposers, such as metal lead frame interposers. For example, the microwave circuit die includes signal vias that electrically connect the top side and the bottom side of the die. Microwave signal circuitry on the die have signal paths that are electrically connected to the top side of the signal vias. The microwave signal circuitry typically may have an operating frequency of 300 MHz or faster. The bottom side of the signal vias are electrically connected to corresponding areas on the top side of the interposer. The bottom side of the die may also include a ground plane, with ground vias that electrically connect the top side of the die to the ground plane.

Microwave packaging uses signal vias and interposers, such as metal lead frame interposers. For example, the microwave circuit die includes signal vias that electrically connect the top side and the bottom side of the die. Microwave signal circuitry on the die have signal paths that are electrically connected to the top side of the signal vias. The microwave signal circuitry typically may have an operating frequency of 300 MHz or faster. The bottom side of the signal vias are electrically connected to corresponding areas on the top side of the interposer. The bottom side of the die may also include a ground plane, with ground vias that electrically connect the top side of the die to the ground plane.

A bonding structure includes a first layer of first alloy component disposed on a substrate and a first layer of a second alloy component disposed on the first alloy component. The second alloy component has a lower melting temperature than the first alloy component. A second layer of the first alloy component is disposed on the first layer of the second alloy component and a second layer of the second alloy component is disposed on the second layer of the first alloy component.