A bonding structure includes a first layer of first alloy component disposed on a substrate and a first layer of a second alloy component disposed on the first alloy component. The second alloy component has a lower melting temperature than the first alloy component. A second layer of the first alloy component is disposed on the first layer of the second alloy component and a second layer of the second alloy component is disposed on the second layer of the first alloy component.

When a semiconductor package is stored in a transport tray and when a semiconductor package is transported by a transport tray, the semiconductor package comes into contact with the side wall of the transport tray, so that the end face of the semiconductor package is chipped and dust is generated from the end face of the semiconductor package. Provided is a technology for a semiconductor package that includes a multilayer structure having at least a synthetic resin layer and includes an outermost edge portion such that the end face of the synthetic resin layer protrudes outward compared to the end faces of the other layers constituting the multilayer structure.

When a semiconductor package is stored in a transport tray and when a semiconductor package is transported by a transport tray, the semiconductor package comes into contact with the side wall of the transport tray, so that the end face of the semiconductor package is chipped and dust is generated from the end face of the semiconductor package. Provided is a technology for a semiconductor package that includes a multilayer structure having at least a synthetic resin layer and includes an outermost edge portion such that the end face of the synthetic resin layer protrudes outward compared to the end faces of the other layers constituting the multilayer structure.

A device includes a relative temperature detector configured to determine a temperature difference between a device temperature sensed near a switch device and an ambient temperature sensed outside the switch device. The relative temperature detector is configured to generate a relative temperature output signal based on comparing the temperature difference to a relative temperature threshold. A power detector is configured to generate a power level signal based on comparing an indication of switch power of the switch device to a power threshold. The power level signal specifies whether the indication of switch power is above or below the power threshold. A thermal capacity control is configured to disable the switch device based on the power level signal specifying that the indication of switch power is above the power threshold and based on the relative temperature output signal indicating the temperature difference is above the relative temperature threshold.

A device includes a relative temperature detector configured to determine a temperature difference between a device temperature sensed near a switch device and an ambient temperature sensed outside the switch device. The relative temperature detector is configured to generate a relative temperature output signal based on comparing the temperature difference to a relative temperature threshold. A power detector is configured to generate a power level signal based on comparing an indication of switch power of the switch device to a power threshold. The power level signal specifies whether the indication of switch power is above or below the power threshold. A thermal capacity control is configured to disable the switch device based on the power level signal specifying that the indication of switch power is above the power threshold and based on the relative temperature output signal indicating the temperature difference is above the relative temperature threshold.

Embodiments include a reflowable grid array (RGA) interposer, a semiconductor packaged system, and a method of forming the semiconductor packaged system. The RGA interposer includes a substrate having vias and zones, where the zones have embedded heaters. The heaters may include first traces, second traces, and via filament interconnects. The vias may have a z-height greater than a z-height of the heaters, and each of the zones may have a grid pattern. The RGA interposer may include first and second layers in the substrate, where the first layer includes the first traces, the second layer includes the second traces, and the second layer is over the first layer. The grid pattern may have parallel first traces orthogonal to parallel second traces to form a pattern of squares, where the pattern of squares has the first traces intersect the second traces substantially at right angles.

Embodiments include a reflowable grid array (RGA) interposer, a semiconductor packaged system, and a method of forming the semiconductor packaged system. The RGA interposer includes a substrate having vias and zones, where the zones have embedded heaters. The heaters may include first traces, second traces, and via filament interconnects. The vias may have a z-height greater than a z-height of the heaters, and each of the zones may have a grid pattern. The RGA interposer may include first and second layers in the substrate, where the first layer includes the first traces, the second layer includes the second traces, and the second layer is over the first layer. The grid pattern may have parallel first traces orthogonal to parallel second traces to form a pattern of squares, where the pattern of squares has the first traces intersect the second traces substantially at right angles.

A semiconductor package includes a first interposer, a second interposer, a first die, a second die and at least one bridge structure. The first interposer and the second interposer are embedded by a first dielectric encapsulation. The first die is disposed over and electrically connected to the first interposer. The second die is disposed over and electrically connected to the second interposer. The at least one bridge structure is disposed between the first die and the second die.

A semiconductor package includes a first interposer, a second interposer, a first die, a second die and at least one bridge structure. The first interposer and the second interposer are embedded by a first dielectric encapsulation. The first die is disposed over and electrically connected to the first interposer. The second die is disposed over and electrically connected to the second interposer. The at least one bridge structure is disposed between the first die and the second die.

Example embodiments relate to lead frame based molded radio frequency packages. One example package includes a substrate. The package also includes a first electrical component arranged on the substrate. Additionally, the package includes a second electrical component. Further, the package includes a plurality of leads that are arranged spaced apart from the substrate and fixed in position relative thereto by a solidified molding compound. The leads were part of a lead frame prior to separating the package from the lead frame. The substrate was physically and electrically connected to the lead frame using a plurality of spaced apart connecting members prior to separating the package from the lead frame. During the separating of the package from the lead frame, each connecting member was divided into a first connecting member part and a second connecting member part. In addition, the package includes a frame part.