A multi-chip module (MCM) package includes a leadframe including half-etched lead terminals including a full-thickness and half-etched portion, and second lead terminals including a thermal pad(s). A first die is attached by a dielectric die attach material to the half-etched lead terminals. The first die includes first bond pads coupled to first circuitry configured for receiving a control signal and for outputting a coded signal and a transmitter. The second die includes second bond pads coupled to second circuitry configured for a receiver with a gate driver. The second die is attached by a conductive die attach material to the thermal pad. Bond wires include die-to-die bond wires between a portion of the first and second bond pads. A high-voltage isolation device is between the transmitter and receiver. A mold compound encapsulates the first and the second die.

The power module semiconductor device (2) includes: an insulating substrate (10); a first pattern (10a) (D) disposed on the insulating substrate (10); a semiconductor chip (Q) disposed on the first pattern; a power terminal (ST, DT) and a signal terminal (CS, G, SS) electrically connected to the semiconductor chip; and a resin layer (12) configured to cover the semiconductor chip and the insulating substrate. The signal terminal is disposed so as to be extended in a vertical direction with respect to a main surface of the insulating substrate.

The power module semiconductor device (2) includes: an insulating substrate (10); a first pattern (10a) (D) disposed on the insulating substrate (10); a semiconductor chip (Q) disposed on the first pattern; a power terminal (ST, DT) and a signal terminal (CS, G, SS) electrically connected to the semiconductor chip; and a resin layer (12) configured to cover the semiconductor chip and the insulating substrate. The signal terminal is disposed so as to be extended in a vertical direction with respect to a main surface of the insulating substrate.

The present disclosure provides a semiconductor device package including a substrate having a first surface and a second surface opposite to the first surface, a first package body disposed on the first surface, and a conductive layer covering the first package body and the substrate. The conductive layer includes a first portion on the top surface of the first package body and a second portion on the lateral surface of the first package body and a sidewall of the substrate. The second portion of the conductive layer has a tapered shape. A method for manufacturing a semiconductor device package is also provided.

The present disclosure provides a semiconductor device package including a substrate having a first surface and a second surface opposite to the first surface, a first package body disposed on the first surface, and a conductive layer covering the first package body and the substrate. The conductive layer includes a first portion on the top surface of the first package body and a second portion on the lateral surface of the first package body and a sidewall of the substrate. The second portion of the conductive layer has a tapered shape. A method for manufacturing a semiconductor device package is also provided.

An approach for transferring solder to a laminate structure in IC (integrated circuit) packaging is disclosed. The approach comprises of a device and method of applying the device. The device comprises of a substrate, a laser ablation layer and solder layer. The device is made by depositing a laser ablation layer onto a glass/silicon substrate and plenty of solder powder/solder pillar is further deposited onto the laser ablation layer. The laminate packaging substrate includes pads with a pad surface finishing layer made from gold. The solder layer of the device is bonded to the laminate packaging substrate. Once bonded, using laser to irradiate the laser ablation layer, the substrate is removed from the laminate.

An approach for transferring solder to a laminate structure in IC (integrated circuit) packaging is disclosed. The approach comprises of a device and method of applying the device. The device comprises of a substrate, a laser ablation layer and solder layer. The device is made by depositing a laser ablation layer onto a glass/silicon substrate and plenty of solder powder/solder pillar is further deposited onto the laser ablation layer. The laminate packaging substrate includes pads with a pad surface finishing layer made from gold. The solder layer of the device is bonded to the laminate packaging substrate. Once bonded, using laser to irradiate the laser ablation layer, the substrate is removed from the laminate.

A 2-in-1 power electronics assembly includes a frame with a lower dielectric layer, an upper dielectric layer spaced apart from the lower dielectric layer, and a sidewall disposed between and coupled to the lower dielectric layer and the upper dielectric layer. The lower dielectric layer includes a lower cooling fluid inlet and the upper dielectric layer includes an upper cooling fluid outlet. A first semiconductor device assembly and a second semiconductor device assembly are included and disposed within the frame. The first semiconductor device is disposed between a first lower metal inverse opal (MIO) layer and a first upper MIO layer, and the second semiconductor device is disposed between a second lower MIO layer and a second upper MIO layer. An internal cooling structure that includes the MIO layers provides double sided cooling for the first semiconductor device and the second semiconductor device.

A 2-in-1 power electronics assembly includes a frame with a lower dielectric layer, an upper dielectric layer spaced apart from the lower dielectric layer, and a sidewall disposed between and coupled to the lower dielectric layer and the upper dielectric layer. The lower dielectric layer includes a lower cooling fluid inlet and the upper dielectric layer includes an upper cooling fluid outlet. A first semiconductor device assembly and a second semiconductor device assembly are included and disposed within the frame. The first semiconductor device is disposed between a first lower metal inverse opal (MIO) layer and a first upper MIO layer, and the second semiconductor device is disposed between a second lower MIO layer and a second upper MIO layer. An internal cooling structure that includes the MIO layers provides double sided cooling for the first semiconductor device and the second semiconductor device.

The present invention provides a photosensitive resin multilayer body which is obtained by superposing, on a supporting film, a photosensitive resin layer containing a photosensitive resin composition that contains from 10% by mass to 90% by mass of (A) an alkali-soluble polymer, from 5% by mass to 70% by mass of (B) a compound having an ethylenically unsaturated double bond and from 0.01% by mass to 20% by mass of (C) a photopolymerization initiator; the alkali-soluble polymer (A) contains a copolymer which contains, as a copolymerization component, a (meth)acrylate that has an alkyl group having from 3 to 12 carbon atoms; an acrylate monomer is contained, as the compound (B) having an ethylenically unsaturated double bond, in an amount of from 51% by mass to 100% by mass relative to the total amount of the compound (B) having an ethylenically unsaturated double bond; the absorbance A of the photosensitive resin layer containing the photosensitive resin composition at a wavelength of 365 nm, said photosensitive resin layer having a film thickness T (μm), satisfies the relational expression 0<A/T≤0.007; and the film thickness of the photosensitive resin layer containing the photosensitive resin composition is from 40 μm to 600 μm.