A method for producing a crystal substrate includes preparing, measuring, holding, and machining. The preparing prepares a crystal substrate body including a curved crystal lattice plane. The measuring measures a shape feature of the crystal lattice plane. The holding holds the crystal substrate body in a warped state in accordance with the shape feature measured by the measuring, to more flatten the crystal lattice plane than the crystal lattice plane at the preparing. The machining machines a surface of the crystal substrate body held in the warped state, to flatten the surface.

A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

A semiconductor manufacturing apparatus includes: an execution instruction receiving unit that receives an execution instruction for the semiconductor manufacturing apparatus to execute a predetermined process related to an operation control of the semiconductor manufacturing apparatus; an identification information receiving unit that receives an input of identification information of the semiconductor manufacturing apparatus; and an execution unit that executes the predetermined process according to the execution instruction of the predetermined process when identification information of the semiconductor manufacturing apparatus preset in the semiconductor manufacturing apparatus is the same as the identification information of the semiconductor manufacturing apparatus received by the identification information receiving unit.

A semiconductor process system includes a wafer support and a control system. The wafer support includes a plurality of heating elements and a plurality of temperature sensors. The heating elements heat a semiconductor wafer supported by the support system. The temperature sensors generate sensor signals indicative of a temperature. The control system selectively controls the heating elements responsive to the sensor signals.

A method of manufacturing a semiconductor device includes forming a film on a substrate by overlapping the following during at least a certain period: (a) supplying a first source to the substrate, the first source including at least one of an inorganic source containing a specific element and a halogen element and an organic source containing the specific element and the halogen element; (b) supplying a second source to the substrate, the second source including at least one of amine, organic hydrazine, and hydrogen nitride; and (c) supplying a third source to the substrate, the third source including at least one of amine, organic hydrazine, hydrogen nitride, and organic borane.

A manufacturing method of a monocrystalline silicon includes: a growth step in which a seed crystal having contacted a silicon melt is pulled up and a crucible is rotated and raised to form a straight body of the monocrystalline silicon; a separating step in which the monocrystalline silicon is separated from the silicon melt; a state holding step in which the crucible and the monocrystalline silicon are lowered and the monocrystalline silicon is kept at a level at which an upper end of the straight body is located at the same level as an upper end of a heat shield or is located below the upper end of the heat shield for a predetermined time; and a draw-out step in which the monocrystalline silicon is drawn out of a chamber.

Disclosed herein are methods and apparatuses for electroplating which employ seed layer detection. Such methods and related apparatuses may operate by selecting a wafer for processing, measuring from its surface one or more in-process color signals having one or more color components, calculating one or more metrics, each metric indicative of the difference between one of the in-process color signals and a corresponding set of reference color signals, determining whether an acceptable seed layer is present on the wafer surface based on whether a predetermined number of the one or more metrics are within an associated predetermined range which individually corresponds to that metric, and either electroplating the wafer when an acceptable seed layer is present or otherwise designating the wafer unacceptable for electroplating. The foregoing may then be repeated for one or more additional wafers to electroplate multiple wafers from a set of wafers.

A reticle container for containing a reticle including a base plate having one or more windows. Each of the windows can include mounting recess having a recess sidewall including an undercut defined therein. A transparent substrate can be disposed in the mounting recess and is retained therein by a retention member having an arcuate portion extending between a first end portion and a second end portion. At least the first end portion of the retention member can be positioned in the undercut defined in the recess sidewall such that the arcuate portion of the retention member contacts the transparent substrate to retain the transparent substrate in the mounting recess.

Embodiments described herein relate to a valve for semiconductor processing. The valve includes a valve body having an inlet conduit and an outlet conduit separated by a diaphragm body. The diaphragm body includes a motor, a transmission link coupled to the motor, a rotatable ring surrounding a fixed plate and separated by a dynamic seal, the rotatable ring coupled to the transmission link, and one or more shutter plates movably coupled to the rotatable ring by a respective pivotable fastener, wherein the fixed plate includes an opening and the one or more shutter plates are movable relative to the opening.

A charge volume configuration for use in delivery of gas to a reactor for processing semiconductor wafers is provided. A charge volume includes a chamber that extends between a proximal end and a distal end. A base connected to the proximal end of the chamber, and the base includes an inlet port and an outlet port. A tube is disposed within the chamber. The tube has a tube diameter that is less than a chamber diameter. The tube has a connection end coupled to the inlet port at the proximal end of the chamber and an output end disposed at the distal end of the chamber.