A substrate processing method includes: maintaining an atmosphere in contact with at least a surface of a substrate on which a first material that is a metal and a second material that is a material other than the first material are exposed, as a deoxidized atmosphere; supplying a film forming material, which selectively forms a film on the first material among the first material and the second material, to the surface of the substrate in a state where the deoxidized atmosphere is maintained by the maintaining; performing a surface treatment of the second material in a state where the film is formed on a surface of the first material supplied in the supplying the film forming material; and removing the film from the surface of the first material after the performing the surface treatment.

Imprinting methods and imprinting systems configured to cure formable material between a substrate and a template. With a first spatial light modulator with a first set of modulation elements configured to expose the formable material between the substrate and the template to a first pattern of actinic radiation; and a second spatial light modulator with a second set of modulation elements configured to expose the formable material between the substrate and the template to a second pattern of actinic radiation. At a plane of the formable material, a first set of centers of the first pattern associated with centers of the first set of modulation elements may be offset from a second set of centers of the second pattern associated with centers of the second set of modulation elements.

A substrate support device relating to technology disclosed in the description of the present application includes: a holding plate for opposing a substrate bowable by being heated by irradiation with flash light; and a plurality of substrate support pins provided on the holding plate and being for supporting the substrate, wherein the plurality of substrate support pins are arranged at locations where a volume of a space between the holding plate and the substrate in an unbowed state and a volume of a space between the holding plate and the substrate in a bowed state are equal to each other. Breakage of the substrate can be suppressed in a case where the substrate is bowed by flash light.

Described herein is a technique capable of suppressing a deviation in a thickness of a film formed on a substrate. According to one aspect of the technique of the present disclosure, a substrate processing apparatus includes a substrate retainer capable of supporting substrates; a cylindrical process chamber including a discharge part and supply holes; partition parts arranged in the circumferential direction to partition supply chambers communicating with the process chamber through the supply holes; nozzles provided with an ejection hole; and gas supply pipes. The supply chambers includes a first nozzle chamber and a second nozzle chamber, the process gas includes a source gas and an assist gas, the nozzles includes a first nozzle for the assist gas flows and a second nozzle disposed in the second nozzle chamber and through which the source gas flows, and the first nozzle is disposed adjacent to the second nozzle.

A semiconductor processing device is provided. The device includes a reaction chamber, a first gas inlet mechanism, and a second gas inlet mechanism that includes a gas inlet, a uniform-flow chamber, at least one gas outlet, and at least one switch element. The gas inlet communicates with the uniform-flow chamber and arranged to deliver a process gas into the uniform-flow chamber. The at least one gas outlet is between the reaction chamber and the uniflow-flow chamber. The at least one switch element is disposed in each gas outlet and arranged to enable the uniform-flow chamber to communicate with the reaction chamber when the process gas is being delivered into the uniform-flow chamber through the gas inlet, and to isolate the uniform-flow chamber from the reaction chamber when no process gas is being delivered into the uniform-flow chamber.

A method for sawing a semiconductor wafer is provided. The method includes sawing a semiconductor wafer to form a first opening. In addition, the semiconductor wafer includes a dicing tape and a substrate attached to the dicing tape by a die attach film (DAF), and the first opening is formed in an upper portion of the substrate. The method further includes sawing through the substrate and the DAF of the semiconductor wafer from the first opening to form a middle opening under the first opening and a second opening under the middle opening, so that the semiconductor wafer is divided into two dies. In addition, a slope of a sidewall of the middle opening is different from slopes of sidewalls of the first opening and the second opening.

A method for monitoring gas in a wafer processing system is provided. The method includes producing an exhaust flow in an exhausting conduit from a processing chamber. The method further includes placing a gas sensor in fluid communication with a detection point located in the exhausting conduit via a sampling tube that passes through a through hole formed on the exhausting conduit. The detection point is located away from the through hole. The method also includes detecting a gas condition at the detection point with the gas sensor. In addition, the method also includes analyzing the gas condition detected by the gas sensor to determine if the gas condition in the exhausting conduit is in a range of values.

A method for treating a substrate includes a substrate treating step of treating the substrate by dispensing a treating liquid onto the substrate while rotating the substrate supported on a support plate in a processing space of a processing vessel and a vessel cleaning step of cleaning the processing vessel by dispensing a cleaning solution onto a jig while rotating the jig supported on the support plate. In the substrate treating step, the substrate is clamped to the support plate by a first vacuum pressure applied to the substrate. The vessel cleaning step includes a first clamping step of clamping the jig to the support plate by applying a second vacuum pressure to the jig. The first vacuum pressure and the second vacuum pressure are different from each other.

An apparatus including a dot matrix transfer head that includes an impact wire housing. A plurality of impact wires are disposed within the impact wire housing and extend out of the impact wire housing. A splaying element attached to a bottom surface of the impact wire housing. The plurality of impact wires extend into and through the splaying element. A guide head attached to a bottom surface of the splaying element. The guide head includes multiple holes that arrange the plurality of impact wires in a matrix configuration. The splaying element is designed to direct the plurality of impact wires toward the multiple holes in the guide head.

A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes providing a substrate; forming a silicon layer on the substrate, wherein an edge region of the top surface of the substrate is exposed from the silicon layer; epitaxially growing a GaN-based semiconductor material on the silicon layer and the substrate to form a GaN-based semiconductor layer on the silicon layer and a plurality of GaN-based nodules on the edge region of the top surface of the substrate; and performing a first dry etch step to remove the GaN-based nodules, wherein performing the first dry etch step includes applying a first bias power that is equal to or higher than 1500 W.