A method for producing a crystal substrate includes preparing, measuring, holding, and machining. The preparing prepares a crystal substrate body including a curved crystal lattice plane. The measuring measures a shape feature of the crystal lattice plane. The holding holds the crystal substrate body in a warped state in accordance with the shape feature measured by the measuring, to more flatten the crystal lattice plane than the crystal lattice plane at the preparing. The machining machines a surface of the crystal substrate body held in the warped state, to flatten the surface.

Vapor accumulator reservoirs for semiconductor processing operations, such as atomic layer deposition operations, are provided. Such vapor accumulator reservoirs may include an optical beam port to allow an optical beam to transit through the vapor and allow measurement of the vapor concentration in the reservoir. In some implementations, the reservoir may be integrated with a vacuum pumping manifold and the reservoir and manifold may be heated by a common heating system to prevent condensation of the vapor.

An instrumented substrate apparatus is configured to measure wavelength-resolved radiation, such as extreme ultraviolet radiation. The instrumented substrate apparatus includes a substrate and photoelectric sensors on the substrate. The photoelectric sensors include a photoemissive material, a photoelectron collector, and a measurement circuit. The measurement circuit is electrically coupled to the photoemissive material and the photoelectron collector. The measurement circuit is configured to measure a current generated by the photoelectron collectors by a current meter. Such current is used to determine the wavelength-resolved EUV measurement information by a controller on the instrumented substrate apparatus, or by communicating the current to a factory automation system.

A temperature control system comprises an enclosure having an intake aperture and an exhaust aperture. An air amplifier disposed inside the enclosure. A gas supply line is connected to the air amplifier through the intake aperture. The gas supply line supplies a first flow of gas to the air amplifier. The air amplifier amplifies the first flow of gas to a second flow of gas inside the enclosure. The second flow of gas exits through the exhaust aperture.

A temperature control device includes a moving stage allowed to be heated and configured to mount a processing target object on a top surface thereof; a cooling body allowed to be cooled and fixed at a position under the moving stage; a shaft, having one end connected to the moving stage; the other end positioned under the cooling body; a first flange provided at the other end; and a second flange provided between the first flange and the cooling body, extended between the one end and the other end; a driving plate, provided between the first flange and the second flange, having a top surface facing the second flange and a bottom surface opposite to the top surface; an elastic body provided between the bottom surface of the driving plate and the first flange; and a driving unit configured to move the driving plate up and down.

A valve assembly for controlling fluid flow rate comprising a valve block, a valve, a sensor chip package, and a controller interface. The valve block having an upstream reservoir, a downstream reservoir, and a valve seat for communicating fluid from an upstream location to a downstream location. The valve having a moveable member. The sensor chip package having at least one sensor coupled with the valve. The controller interface is communicable coupled to a control unit, the valve, and the sensor chip package. The controller interface sends at least one parametric value provided by the sensor chip package to the control unit. The controller interface receives a control signal used to adjust valve stroke of the valve. The control signal of the valve is determined based on the at least one measured parametric value and at least one other parametric value provided by a fluid processing system.

The present disclosure provides an apparatus. The apparatus according to the present disclosure comprises: at least one first light source configured to irradiate illumination light to an object on a reference surface; at least one second light source configured to irradiate pattern light to the object, a plurality of cameras configured to capture one or more illumination images and one or more pattern images; and one or more processors configured to determine a plurality of outlines indicating edges of the object based on two or more images captured in different directions among the one or more illumination images and the one or more pattern images; determine a virtual plane corresponding to an upper surface of the object based on the plurality of outlines; and determine an angle between the virtual plane and the reference plane.

A method of manufacturing a flip chip package includes forming a plurality of semiconductor chips and bonding the semiconductor chips to a package substrate. The method further includes electrically testing the plurality of semiconductor chips on the package substrate, molding the tested semiconductor chips, and singulating the molded chips. Electrically testing the semiconductor chips includes covering the semiconductor chips with a protection member.

Panel level packaging (PLP) with high accuracy and high scalability is disclosed. The PLP employs an alignment carrier with a low coefficient of expansion which is configured with die regions having local die alignment marks. For example, local die alignment marks are provided for each die attach region. Depending on the size of the panel, it may be segmented into blocks, each with die regions with local die alignment marks. In addition, a block includes an alignment die region configured for attaching an alignment die. Linear and non-linear positional errors are reduced due to local die alignment marks and alignment dies. The use of local die alignment marks and alignment dies results in increase yields as well as scaling, thereby improving throughput and decreasing overall costs.

Methods of and systems for performing leak checks of gas-phase reactor systems are disclosed. Exemplary systems include a first exhaust system coupled to a reaction chamber via a first exhaust line, a bypass line coupled to a gas supply unit and to the first exhaust system, a gas detector coupled to the bypass line via a connecting line, a connecting line valve coupled to the connecting line, and a second exhaust system coupled to the connecting line. Methods include using the second exhaust system to exhaust the connecting line to thereby remove residual gas in the connecting line that may otherwise affect the accuracy of the gas detector.