In an embodiment, a system includes: a warehousing apparatus configured to interface with a semiconductor die processing tool configured to process a semiconductor die singulated from a wafer, wherein the semiconductor die processing tool comprise an in-port and an out-port, wherein the warehousing apparatus is configured to: move a first die vessel that contains the semiconductor die to the in-port from a first die vessel container, wherein the first die vessel container is configured to house the first die vessel; move the first die vessel from the in-port to a buffer region; and move a second die vessel from the buffer region to the out-port.

A surface treatment apparatus and a surface treatment system having the same are disclosed. The surface treatment apparatus includes a process chamber in which the surface treatment process is conducted, a plasma generator for generating process radicals as a plasma state for the surface treatment process, the plasma generator being positioned outside of the process chamber and connected to the process chamber by a supply duct, a heat exchanger arranged on the supply duct and cooling down temperature of the process radicals passing through the supply duct and a flow controller controlling the process radicals to flow out of the process chamber. The flow controller is connected to a discharge duct through which the process radicals are discharged outside the process chamber. The plasma surface treatment process is conducted to the package structure having minute mounting gap without the damages to the IC chip and the board.

A holding device for holding a plurality of substrates for plasma-enhanced deposition of a layer from the gas phase on the substrates, having: inner carrier plates, arranged parallel to one another and designed to carry substrates on mutually opposite sides; outer carrier plates, arranged parallel to the inner carrier plates and having an inner side facing the inner carrier plates, and an outer side facing away from the inner carrier plates, wherein each outer carrier plate is designed to carry one or more substrates on its inner side and to be free of substrates on its outer side; and shielding plates which are each arranged at a distance from the outer side of the outer carrier plate such that, as seen in a plan view of the outer carrier plates, the shielding plates at least predominantly shield the outer carrier plates, wherein each shielding plate is free of substrates.

Substrates can be suppressed from being separated from supporting grooves. A substrate processing apparatus includes a substrate holding unit and a processing tub. The substrate holding unit is configured to hold multiple substrates. The processing tub is configured to store a processing liquid therein. The substrate holding unit includes a supporting body, an elevating device and a restriction unit. The supporting body has multiple supporting grooves and is configured to support the multiple substrates with a vertically standing posture from below in the multiple supporting grooves, respectively. The elevating device is configured to move the supporting body between a standby position above the processing tub and a processing position within the processing tub. The restriction unit is configured to be moved up and down along with the supporting body by the elevating device and configured to restrict an upward movement of the substrates with respect to the supporting body.

A method includes aligning and positioning a carrier in a predetermined orientation and location within a first front opening pod (FOUP) of a cluster tool, transferring the carrier to a charging station of the cluster tool, transferring a substrate from a second front opening pod (FOUP) of the cluster tool to the charging station and chucking the substrate onto the carrier, transferring the carrier having the substrate thereon from the charging station to a factory interface of the cluster tool, aligning the carrier having the substrate thereon in the factory interface of the cluster tool such that during substrate processing within a processing platform of the cluster tool the carrier is properly oriented and positioned relative to components of the processing platform, where the processing platform comprises one or more processing chambers, transferring the aligned carrier having the substrate thereon from the factory interface to the processing platform of the cluster tool for substrate processing, and transferring the aligned carrier having the processed substrate thereon from the processing platform to the factory interface.

An apparatus for treating a substrate is provided. The apparatus for treating the substrate includes a first process chamber to perform a liquid treatment process with respect to the substrate, a second process chamber to perform a drying treatment process with respect to the substrate which is liquid treated in the first process chamber, a first hand to introduce the substrate to the first process chamber, before the liquid treatment process is performed, a second hand to withdraw the substrate from the first process chamber after the liquid treatment process is performed and to introduce the substrate into the second process chamber, and a third hand to withdraw the substrate from the second process chamber after the drying treatment process is performed.

Various embodiments herein relate to carriers for supporting one or more substrate as the substrates are passed through a processing apparatus. In many cases, the substrates are oriented in a vertical manner. The carrier may include a frame and vertical support bars that secure the glass to the frame. The carrier may lack horizontal support bars. The carrier may allow for thermal expansion and contraction of the substrates, without any need to provide precise gaps between adjacent pairs of substrates. The carriers described herein substantially reduce the risk of breaking the processing apparatus and substrates, thereby achieving a more efficient process. Certain embodiments herein relate to methods of loading substrates onto a carrier.

Exemplary semiconductor substrate carrier frames may include a frame body defining a central aperture. The frames may include a plurality of fingers that are coupled with the frame body. Each of the plurality of fingers may extend into the central aperture. Each of the plurality of fingers may include a substrate receiving interface. At least one of the plurality of fingers may include an actuator that manipulates a respective one of the at least one of the plurality of fingers between a substrate holding position and an open position.

A surface treatment apparatus and a surface treatment system having the same are disclosed. The surface treatment apparatus includes a process chamber in which the surface treatment process is conducted, a plasma generator for generating process radicals as a plasma state for the surface treatment process, the plasma generator being positioned outside of the process chamber and connected to the process chamber by a supply duct, a heat exchanger arranged on the supply duct and cooling down temperature of the process radicals passing through the supply duct and a flow controller controlling the process radicals to flow out of the process chamber. The flow controller is connected to a discharge duct through which the process radicals are discharged outside the process chamber. The plasma surface treatment process is conducted to the package structure having minute mounting gap without the damages to the IC chip and the board.

A substrate processing method using a substrate processing apparatus which comprises a process chamber in which a reaction space is formed to process a substrate in which a composite layer pattern having a plurality of first insulating layers and a plurality of second insulating layers alternately stacked thereon is formed, a substrate support unit, a gas distribution unit, and a plasma reactor, the method comprising the steps of: heating the substrate support unit and the gas distribution unit such that a temperature of the gas distribution unit is maintained equal to or lower than a temperature of the substrate support unit; supplying a reactive gas including a halogen-containing gas to the plasma reactor; generating radicals by applying power to the plasma reactor to activate the halogen-containing gas; and at least partially etching the plurality of first insulating layers in a lateral direction selectively with respect to the plurality of second insulating layers by supplying the radicals onto the substrate mounted on the substrate support unit through the gas distribution unit.