In a described example, a method for forming a capacitor includes: forming a capacitor first plate over a non-conductive substrate; flowing ammonia and nitrogen gas into a plasma enhanced chemical vapor deposition (PECVD) chamber containing the non-conductive substrate; stabilizing a pressure and a temperature in the PECVD chamber; turning on radio frequency high frequency (RF-HF) power to the PECVD chamber; pretreating the capacitor first plate for at least 60 seconds; depositing a capacitor dielectric on the capacitor first plate; and depositing a capacitor second plate on the capacitor dielectric.

A vapor deposition device is provided that can correct a positional offset of a carrier in a rotation direction relative to a wafer when the vapor deposition device is viewed in a plan view. The vapor deposition device includes a load-lock chamber provided with a holder for supporting the carrier, and the carrier and the holder are provided with a correction mechanism that corrects a position of the carrier in a rotation direction when the vapor deposition device is viewed in a plan view.

A material processing path selection method includes calculating a plurality of candidate material processing paths, determining a bottleneck process tank, and for each of the plurality of candidate material processing paths, calculating a bottleneck process tank utilization rate to select a candidate material processing path with a highest bottleneck process tank utilization rate in the plurality of candidate material processing paths as a target material processing path. The bottleneck process tank is a process tank having a highest use frequency among all process tanks, A use frequency of the process tank is equal to a total process time length of all materials that need to be transferred to the process tank divided by a number of all the materials that need to be transferred to the process tank.

There is provided a system for processing a substrate under a depressurized environment. The system comprises: a processing chamber configured to perform desired processing on a substrate; a transfer chamber having a transfer mechanism configured to import or export the substrate into or from the processing chamber; and a controller configured to control a processing process in the processing chamber. The transfer mechanism comprises: a fork configured to hold the substrate on an upper surface; and a sensor provided in the fork and configured to measure an internal state of the processing chamber. The controller is configured to control the processing process in the processing chamber on the basis of the internal state of the processing chamber measured by the sensor.

A processing method of a workpiece in which the workpiece with a plate shape is processed by using a vacuum chamber is provided. In the processing method of a workpiece, a negative pressure is caused to act on a holding surface from a suction path, and suction holding of the workpiece is executed by a chuck table. Then, the gas pressure in the vacuum chamber is reduced to at least 50 Pa and at most 5000 Pa. Then, while the suction holding of the workpiece is executed, an inert gas in a plasma state is supplied to the workpiece, and voltages are applied to electrodes disposed in the chuck table to execute electrostatic adhesion of the workpiece by the chuck table. Then, a processing gas in a plasma state is supplied, and dry etching of the workpiece is executed.

There is provided a configuration that includes: an intake damper and an intake fan configured to communicate with an intake port that sucks air to a transfer chamber connected to a process chamber; a valve of an inert gas introduction pipe configured to supply an inert gas to the transfer chamber; an exhaust fan and a first exhaust valve installed in the transfer chamber; a switch configured to select one of an atmospheric mode in which an atmosphere of the transfer chamber is an air atmosphere and a purge mode in which the atmosphere of the transfer chamber is an inert gas atmosphere; and a controller configured to control each of the intake damper, the intake fan, the valve of the inert gas introduction pipe, the exhaust fan, and the first exhaust valve to execute one of the atmospheric mode and the purge mode.

A substrate processing apparatus includes: a substrate retainer configured to support a substrate; a heat-insulating unit; a transfer chamber; and a gas supply mechanism configured to supply a gas into the transfer chamber, the gas supply mechanism including: a first gas supply mechanism configured to supply the gas into an upper region of the transfer chamber, where the substrate retainer is disposed such that the gas flows horizontally through the upper region; and a second gas supply mechanism configured to supply the gas into a lower region of the transfer chamber, where the heat-insulating unit is provided such that the gas flows downward through the lower region, wherein the first gas supply mechanism and the second gas supply mechanism are disposed along a first sidewall of the transfer chamber, and the second gas supply mechanism is disposed lower than the first gas supply mechanism.

A substrate treating method for treating substrates with a substrate treating apparatus having an indexer section, a treating section and an interface section includes performing resist film forming treatment in parallel on a plurality of stories provided in the treating section and performing developing treatment in parallel on a plurality of stories provided in the treating section.

Disclosed is a substrate treating apparatus that performs a heat treatment to a substrate. The apparatus includes the following elements: a heat treating plate; a casing that produces a heat treatment atmosphere by the heat treating plate; a movable top board that is movable between a ceiling surface of the casing and the heat treating plate; and a controller that causes the movable top board to be moved to a raised position when the substrate is loaded/unloaded, and causes the movable top board to be moved to a lowered position when the substrate is placed on the heat treating plate for performing the heat treatment, thereby controlling the lowered position for every substrate.

Examples of the present invention provide an apparatus for transferring substrates and confining a processing environment in a chamber. One example provides a hoop assembly for use in a processing chamber. The hoop assembly includes a confinement ring defining a confinement region therein. A hoop body mates with the confinement ring. The hoop body is slanted to reduce a thickness across a diameter of the hoop body. Three or more lifting fingers are attached to the hoop body and extend downwards. Each of the three or more lifting fingers has a contact tip positioned radially inward from the hoop body to form a substrate support surface below and spaced apart from the confinement region.