An improved fluid delivery system and method that directly controls the concentration of constituent components in a fluid mixture delivered, for example, to a process chamber. Pressure of the fluid mixture can also be directly controlled. A concentration sensor capable of measuring concentration of all of the constituent components in a fluid mixture is used to provide signals used to vary the flow rate of constituent gases under a closed loop feedback system. The signal output of one or more pressure sensors can also be used to provide a signal used to vary the flow rate of constituent gases under a closed loop feedback system. By directly controlling these two extremely important process variables, embodiments of the present invention provide a significant advantage in measurement accuracy over the prior art, enable real-time process control, reduce system level response time, and allow for a system with a significant footprint reduction.

A chip-transferring system and a chip-transferring method are provided. The chip-transferring system includes a substrate-carrying module for carrying a chip-carrying structure, a chip-transferring module, and a system control module. The chip-carrying structure includes a circuit substrate for carrying a plurality of conductive materials, a plurality of micro heaters, and a micro heater control chip. The chip-transferring module is configured for transferring a chip onto two corresponding ones of the conductive materials, and the chip-transferring module includes a motion sensing chip. When chip movement information of the chip that is provided by the motion sensing chip is transmitted to the system control module, the micro heater control chip is configured to control a corresponding one of the micro heaters to start or stop heating the two corresponding conductive materials by control of the system control module according to the chip movement information of the chip.

A semiconductor-machine automatic leveling apparatus includes an inclination adjusting gear, a motor, a driving gear, an inclination acquisition mechanism and a controller. The inclination adjusting gear is configured to drive one side of a tabletop of a wafer transfer machine to move up and down. The driving gear is mounted on a rotation shaft of the motor and engaged with the inclination adjusting gear. The inclination acquisition mechanism is configured to acquire inclination information of the tabletop of the wafer transfer machine and electrically connected to the controller. The controller is electrically connected to the motor and configured to control the motor to operate according to the inclination information.

A vapor deposition system comprises a vacuum chamber and two or more process modules each configured for processing a semiconductor substrate. Each process module is removably connected to a respective port of the vacuum chamber such that each process module is in vacuum communication with the vacuum chamber when connected to the respective port. A port sealing mechanism is configured to create a vacuum seal at each port such that when a first port is sealed and a first process module is disconnected from the first port, a vacuum condition is maintained within the vacuum chamber while the first process module is open to atmospheric pressure.

A substrate processing system is disclosed which includes a processing chamber comprising a susceptor having a first surface and a second surface opposite to the first surface, a groove formed in the first surface adjacent to a perimeter thereof, and a substrate support structure including a plurality of carrier lift pins, each of the plurality of carrier lift pins movably disposed in an opening formed from the second surface to the first surface, wherein the opening is recessed from the groove.

An improved fluid delivery system and method that directly controls the concentration of constituent components in a fluid mixture delivered, for example, to a process chamber. Pressure of the fluid mixture can also be directly controlled. A concentration sensor capable of measuring concentration of all of the constituent components in a fluid mixture is used to provide signals used to vary the flow rate of constituent gases under a closed loop feedback system. The signal output of one or more pressure sensors can also be used to provide a signal used to vary the flow rate of constituent gases under a closed loop feedback system. By directly controlling these two extremely important process variables, embodiments of the present invention provide a significant advantage in measurement accuracy over the prior art, enable real-time process control, reduce system level response time, and allow for a system with a significant footprint reduction.

A gate valve apparatus and a semiconductor manufacturing apparatus, in which a volume of a drive portion for driving a valve body is reduced, are provided. The gate valve apparatus includes a housing having an opening, a valve body configured to open and close the opening, and a drive portion configured to drive the valve body, in which the drive portion includes a first crankshaft including a first input shaft rotatably supported by a side wall of the housing and a first output shaft rotatably supported by the valve body, a second crankshaft including a second input shaft rotatably supported by the side wall of the housing and a second output shaft rotatably supported by the valve body, a rotation transmission portion configured to transmit rotation of the first input shaft to the second input shaft, and an actuator configured to rotate the first input shaft.

A method for particle abatement in a wafer processing tool implements at least one cleaning-purposed mobile electrostatic carrier (MESC) including electrostatic field generating (EFG) circuits. Each EFG circuit is charged with the cleaning-purposed MESC. The cleaning-purposed MESC is then loaded into the wafer processing tool in a facedown orientation. A normal-purposed MESC is loaded into the wafer processing tool in a faceup orientation. Next, foreign materials are bonded to the cleaning-purposed MESC as the cleaning-purposed MESC is moved along a processing path through the wafer processing tool in the facedown orientation. The normal-purposed MESC travels the processing path during normal operation of the wafer processing tool in the faceup orientation. The cleaning-purposed MESC is then unloaded from the wafer processing tool. Next, the foreign materials are debonded from the cleaning-purposed MESC by discharging each EFG circuit with the cleaning-purposed MESC. Finally, the foreign materials are removed off the cleaning-purposed MESC.

The present disclosure relates to a substrate processing apparatus, and more specifically, to a substrate processing apparatus capable of blocking the introduction of external air and external particles into a chamber by forming an air curtain at a loading/unloading part when the chamber is open. The substrate processing apparatus of the present disclosure includes a chamber in which a space is formed, and a fluid injection part configured to inject a fluid from an outer side of a substrate loading/unloading part of the chamber through which a substrate is loaded and unloaded.

A technique for reducing cooling time for a substrate includes a substrate processing apparatus that may include: a substrate retainer configured to support a substrate; a heat-insulating unit; a transfer chamber; and a gas supply mechanism to supply a gas into the transfer chamber, the gas supply mechanism including: a first gas supply mechanism to supply the gas into an upper region of the transfer chamber. The substrate retainer is disposed such that the gas flows horizontally through the upper region; and a second gas supply mechanism to supply the gas into a lower region of the transfer chamber. The heat-insulating unit is provided such that the gas flows downward through the lower region. The first gas supply mechanism and the second gas supply mechanism are disposed along a first sidewall of the transfer chamber, and the second gas supply mechanism is disposed lower than the first gas supply mechanism.