A method, a non-transitory computer readable medium and a system for reducing a temperature difference between a sample and a chuck of an electron beam tool. The method may include determining a target temperature of samples located at the load port of the electron beam tool; setting a temperature of the samples, located at the load port, to the target temperature; moving the sample from the load port to the chuck, the chuck is located within a vacuum chamber, the sample belongs to the samples; and positioning the sample on the chuck, wherein when positioned on the chuck, a temperature of the sample substantially equals a temperature of the chuck.

A substrate processing system includes a substrate processing apparatus configured to process a substrate, a substrate transfer mechanism including a substrate holder configured to hold the substrate, an imaging device provided in the substrate transfer mechanism and configured to image a monitoring target member inside the substrate processing apparatus, and a controller. The controller is configured to cause the imaging device to image multiple portions of the monitoring target member, including a central portion facing a center of the substrate during processing and a peripheral edge portion facing a peripheral edge side of the substrate during the processing, by moving the substrate holder, and calculate, for each of the multiple portions of the monitoring target member, a physical amount indicating a state of the corresponding portion based on an imaging result.

A substrate processing system includes manufacturing process equipment including a plurality of process chambers and a control server configured to control the manufacturing process equipment. When a transporting order of semiconductor substrates is transmitted from the control server to the manufacturing process equipment, the control server provides, to the manufacturing process equipment performing an Nth process cycle (where N is a natural number) in a first transporting order, a command to switch to a second transporting order from an N+1th process cycle immediately when a restriction on at least one process chamber, into which insertion of the semiconductor substrate is restricted, is lifted.

In an embodiment, a semiconductor processing tool for implementing hybrid laser and plasma dicing of a substrate is provided. The semiconductor processing tool comprises a transfer module, where the transfer module comprises a track robot for handling the substrate, and a loadlock attached to the transfer module. In an embodiment, the loadlock comprises a linear transfer system for handling the substrate. In an embodiment, the processing tool further comprises a processing chamber attached to the loadlock, wherein the linear transfer system of the loadlock is configured to insert and remove the substrate from the processing chamber.

A method for etching a surface including obtaining a substrate comprising a material; reacting a surface of a substrate with a reactant, comprising a gas or a plasma, to form a reactive layer on the substrate, the reactive layer comprising a chemical compound including the reactant and the material; and wet etching or dissolving the reactive layer with a liquid wet etchant of solvent that selectively etches or dissolves the reactive layer but not the substrate.

Authentication information is acquired from a storage medium through near field communication in one authentication device. Whether the authentication information corresponds to one substrate processing apparatus at which the authentication device is provided is determined. In a case where the authentication information corresponds to the one substrate processing apparatus, access information is transmitted from the authentication device through near field communication. An instruction terminal receives the access information through near field communication. The instruction terminal accesses a maintenance instruction device based on the access information, whereby a maintenance screen is displayed on a display of the instruction terminal. The instruction terminal has an operation unit to be operated by a user in order to provide an instruction for performing a maintenance operation.

An improved fluid delivery system and method that directly controls the concentration of constituent components in a fluid mixture delivered, for example, to a process chamber. Pressure of the fluid mixture can also be directly controlled. A concentration sensor capable of measuring concentration of all of the constituent components in a fluid mixture is used to provide signals used to vary the flow rate of constituent gases under a closed loop feedback system. The signal output of one or more pressure sensors can also be used to provide a signal used to vary the flow rate of constituent gases under a closed loop feedback system. By directly controlling these two extremely important process variables, embodiments of the present invention provide a significant advantage in measurement accuracy over the prior art, enable real-time process control, reduce system level response time, and allow for a system with a significant footprint reduction.

Embodiments disclosed herein are directed to forming MOSFET devices. In particular, one or more pre-silicide treatments are performed on a substrate prior to the deposition of the metal-silicide layer to improve the density and performance of the metal-silicide layer in the MOSFETs. The metal-silicide formation formed with the pre-silicide treatment(s) can occur before or after the formation of metal gates during MOSFET fabrication.

Provided are a cleaning device and a method for driving the cleaning device which cleans a wafer after chemical mechanical polishing. The cleaning device includes a cleaning modules and a running beam, the running beam including a first blade and a second blade to insert or remove the wafer with respect to one of the cleaning modules in a second direction, the first blade and the second blade being fixed to the running beam and movable in the second direction, and the cleaning modules including an input module, a megasonic module, a first brush module, a second brush module and a drying module. The driving method includes performing an operation of inserting or removing the wafer in the second direction using the first blade in a first area; and performing an operation of inserting or removing the wafer in the second direction using the second blade in a second area.

A side surface unit of a heat treatment space S is formed by a shutter member 250 including an outer shutter 260 and an inner shutter 270. Supply air A is supplied as a horizontal laminar flow toward a wafer W from a lower end side of the shutter member 250, that is, from a gap d.sub.1 located on the level with the wafer W placed on a heat plate 211 of a mounting table 210. Supply air B is supplied into the heat treatment space S from an upper end side of the shutter member 250, that is, from a gap d.sub.2 positioned higher than the wafer W. A ratio between a flow rate of the supply air A and a flow rate of the supply air B is 4:1.