Disclosed are semiconductor packages and their fabricating methods. The semiconductor package includes a lower structure and an upper redistribution layer. The lower structure includes a first bump layer, a lower redistribution layer, a semiconductor chip, a molding layer, a conductive pillar, and an under pad layer. The upper redistribution layer includes a second bump layer and second redistribution layers. The first redistribution layer includes a lower redistribution pattern including a first line part and a first via part. A width of the first via part increases in a direction toward the first line part from a bottom surface of the first via part. The second redistribution layer includes an upper redistribution pattern including a second line part and the second via part. A width of the second via part increases in a direction toward the second line part from a top surface of the second via part.

A method includes forming a plurality of dielectric layers, forming a plurality of redistribution lines in the plurality of dielectric layers, etching the plurality of dielectric layers to form an opening, filling the opening to form a through-dielectric via penetrating through the plurality of dielectric layers, forming an insulation layer over the through-dielectric via and the plurality of dielectric layers, forming a plurality of bond pads in the dielectric layer, and bonding a device to the insulation layer and a portion of the plurality of bond pads through hybrid bonding.

A temporary substrate, which is detachable at a detachment temperature higher than 1000° C. comprises: a semiconductor working layer extending along a main plane, a carrier substrate, an intermediate layer having a thickness less than 20 nm arranged between the working layer and the carrier substrate, a bonding interface located in or adjacent the intermediate layer, gaseous atomic species distributed according to a concentration profile along the axis normal to the main plane, the atoms remaining trapped in the intermediate layer and/or in an adjacent layer of the carrier substrate with a thickness less than or equal to 10 nm and/or in an adjacent sublayer of the working layer with a thickness less than or equal to 10 nm when the temporary substrate is subjected to a temperature lower than the detachment temperature.

A method for transferring a thin layer onto a carrier substrate comprises preparing a carrier substrate using a preparation method involving supplying a base substrate having, on a main face, a charge-trapping layer and forming a dielectric layer having a thickness greater than 200 nm on the charge-trapping layer. Once the dielectric layer is formed, the ionized deposition and sputtering of the dielectric layer are simultaneously performed. The transfer method also comprises assembling, by way of molecular adhesion and with an unpolished free face of the dielectric layer, a donor substrate to the dielectric layer of the carrier substrate, the donor substrate having an embrittlement plane defining the thin layer. Finally, the method comprises splitting the donor substrate at the embrittlement plane to release the thin layer and to transfer it onto the carrier substrate.

A semiconductor device such as a chip-scale package is provided. Aspects of the present disclosure further relate to a method for manufacturing such a device. According to an aspect of the present disclosure, a semiconductor device is provided that includes a conformal coating arranged on its sidewalls and on the perimeter part of the semiconductor die of the semiconductor device. To prevent the conformal coating from covering unwanted areas, such as electrical terminals, a sacrificial layer is arranged prior to arranging the conformal coating. By removing the sacrificial layer, the conformal coating can be removed locally. The conformal coating covers the perimeter part of the semiconductor die by the semiconductor device, in which part a remainder of a sawing line or dicing street is provided.

This disclosure is related to integrating pixelated microdevices into a system substrate to develop a functional system such as display, sensors, and other optoelectronic devices. The process may involve having a structure of release layers in the housing and then using different decoupling mechanisms for release. The release layers are not limited to but can be a combination of chemical or optical or mechanical release layers.

A method for transferring a thin layer onto a destination substrate having a face with an adhesive layer includes formation of a polymer material interface layer on a second face of a thin layer, opposite a first face on which an adhesive is present. The method also includes assembly by gluing the interface layer and the adhesive layer and separation of the thin layer relative to a temporary support.

The present disclosure concerns a method of manufacturing an electronic component and the obtained component, comprising a substrate, comprising the successive steps of: depositing a first layer of a first resin activated by abrasion to become electrically conductive, on a first surface of said substrate comprising at least one electric contact and, at least partially, on the lateral flanks of said substrate; partially abrading said first layer on the flanks of said substrate.

A semiconductor device, the device including: a first level including control circuits, where the control circuits include a plurality of first transistors and a plurality of metal layers; and a memory level disposed on top of the first level, where the memory level includes an array of memory cells, where each of the memory cells includes at least one second transistor, where the control circuits control access to the array of memory cells, where the first level is bonded to the memory level, where the bonded includes oxide to oxide bonding regions and a plurality of metal to metal bonding regions, and where at least a portion of the array of memory cells is disposed directly above at least one of the plurality of metal to metal bonding regions.

A semiconductor device includes an electronic circuit within a device layer; wherein the device layer is between a thin layer of wiring for signal connections having a first thickness and a thick layer of wiring for power having a second thickness, the second thickness being greater than the first thickness; a silicon layer above the device layer, the thin layer of wiring, and the thick layer of wiring; a first via connection from a top of the semiconductor device to the thin layer of wiring; a second via connection from the top of the semiconductor device to the thick layer of wiring; and a packaging substrate with a connection to the thick layer of wiring.