An upper holding device holds a substrate in a horizontal attitude without rotating the substrate. A lower holding device rotates a substrate while holding the substrate by suction. A substrate held by the upper holding device is cleaned with use of a cleaning liquid, and a substrate held by the lower holding device is cleaned with use of a cleaning liquid. Gas in a processing space is exhausted by exhaust equipment of a factory through an exhaust system. When a substrate is held by the upper holding device, gas in the processing space is not exhausted or gas in the processing space is exhausted at a first flow rate. Gas in the processing space is exhausted at a second or third flow rate that is higher than the first flow rate when the substrate is held by the lower holding device.

A treatment apparatus including a chuck table, a table base, a servo motor that rotates the table base, and a determination unit that determines the kind of the chuck table mounted to the table base is provided. The determination unit includes a torque recording section in which a torque outputted by the servo motor when rotating the table base is recorded on the basis of the kind of the chuck table, and a determination section that collates the torque outputted by the servo motor with the torque recording section, to thereby determine the kind of the chuck table.

A method includes placing a first wafer on a first wafer stage, placing a second wafer on a second wafer stage, and pushing a center portion of the first wafer to contact the second wafer. A bonding wave propagates from the center portion to edge portions of the first wafer and the second wafer. When the bonding wave propagates from the center portion to the edge portions of the first wafer and the second wafer, a stage gap between the top wafer stage and the bottom wafer stage is reduced.

The present invention provides a substrate treating apparatus, including: a treatment container having a treatment space therein; a support unit for supporting and rotating the substrate in the treatment space; and a liquid supply unit for supplying a liquid onto the substrate, in which wherein the support unit includes: a body on which the substrate is seated; and a support shaft coupled to the body, and an upper surface of the body is provided with a central portion including a center of the body and an edge portion surrounding the central portion, and a vacuum hole is formed in the central portion, and a groove is formed in the edge portion.

Embodiments of the present disclosure provide a heated support pedestal including a body comprising a ceramic material, a support arm extending radially outward from a periphery of the body that is coupled to a shaft, and a vacuum conduit disposed within the shaft and through the body to connect with a surface of the body.

A die placement system provides a tip body and die placement head to ensure planarity of a die to substrate without the need for calibration prior to each pick and place operation. A self-aligning tip incorporated into a tip body aids in die placement/attachment. This tip provides for global correction of planarity errors that exist between a die and substrate, regardless of whether those errors stem from gantry (i.e. die-side misalignment) or machine deck tool (i.e. substrate-side misalignment) misalignment.

A method for bonding a contact surface of a first substrate to a contact surface of a second substrate comprising of the steps of: positioning the first substrate on a first receiving surface of a first receiving apparatus and positioning the second substrate on a second receiving surface of a second receiving apparatus; establishing contact of the contact surfaces at a bond initiation site; and bonding the first substrate to the second substrate along a bonding wave which is travelling from the bond initiation site to the side edges of the substrates, wherein the first substrate and/or the second substrate is/are deformed for alignment of the contact surfaces.

The present invention provides a conveyance apparatus that conveys an object to a processing space in which processing is performed using the object, including a hand configured to hold the object, and a moving unit configured to freely move the hand in the processing space, wherein the hand includes a suction hole provided in a surface different from a holding surface configured to come into contact with the object and hold the object, and a first flow path configured to allow the suction hole and an exhaust source to communicate with each other, and exhaust an atmosphere around the suction hole sucked via the exhaust source and the suction hole to an outside.

Embodiments of the present disclosure provide a device for adjusting a wafer, a reaction chamber, and a method for adjusting a wafer. The device for adjusting a wafer includes: a lifting module, the lifting module including a first carrier surface configured to carry a wafer, and the first carrier surface ascending to a preset highest position or descending to a preset lowest position relative to a reference surface; a carrier module, the carrier module including a second carrier surface, a position of the second carrier surface being higher than the preset lowest position and being lower than the preset highest position, and the second carrier surface being configured to receive and carry the wafer carried on the first carrier surface; and a suction module, the suction module including a first suction opening facing the wafer and surrounded by the second carrier surface.

A machine and a wafer processing apparatus are provided; the machine includes a body and an adjustment part. The body is configured to bear a wafer; the adjustment part is disposed in the body, and the adjustment part uses a vacuum suction to adjust a levelness of an in-process wafer.