An apparatus includes a substrate; a group III-Nitride barrier layer; a source electrically coupled to the group III-Nitride barrier layer; a gate on the group III-Nitride barrier layer; a drain electrically coupled to the group III-Nitride barrier layer; a p-region being arranged at or below the group III-Nitride barrier layer; and a recovery enhancement circuit configured to reduce an impact of an overload received by the gate. Additionally, at least a portion of the p-region is arranged vertically below at least one of the following: the source, the gate, an area between the gate and the drain.

A semiconductor device wafer includes a plurality of device patterns formed in or over a semiconductor substrate, and a scribe area from which the device patterns are excluded. A plurality of dummy features are located in at least one material level in the scribe area, including over laser scribe dots formed in the semiconductor substrate.

A semiconductor device wafer includes a plurality of device patterns formed in or over a semiconductor substrate, and a scribe area from which the device patterns are excluded. A plurality of dummy features are located in at least one material level in the scribe area, including over laser scribe dots formed in the semiconductor substrate.

A electronic component including a first protective layer covering the substrate and the conductive tract, a second protective layer covering at least a portion of the first protective layer, wherein the second protective layer includes Parylene, and a third protective layer covering at least a portion of the second protective layer.

An apparatus for cleaning semiconductor substrates including a chamber, a chuck, a liquid collector, an enclosing wall, at least one driving mechanism, at least one internal dispenser, and at least one external dispenser. The chamber has a top wall, a side wall and a bottom wall. The chuck is disposed in the chamber. The liquid collector surrounds the chuck. The enclosing wall surrounds the liquid collector. The driving mechanism drives the enclosing wall to move up and down, wherein when the enclosing wall is driven to move up, a seal room is formed by the liquid collector, the enclosing wall, the top wall and bottom wall of the chamber. The internal dispenser is disposed inside the seal room. The external dispenser is disposed outside the seal room and capable of getting in and out of the seal room after the enclosing wall is driven to move down.

A semiconductor structure includes first and second source/drain (S/D) features, one or more semiconductor channel layers connecting the first and second S/D features, a gate structure engaging the one or more semiconductor channel layers, a metal wiring layer at a backside of the semiconductor structure, an S/D contact electrically connecting the first S/D feature to the metal wiring layer, and a seal layer between the metal wiring layer and the gate structure. The seal layer is spaced away from the gate structure by an air gap therebetween.

A semiconductor structure includes first and second source/drain (S/D) features, one or more semiconductor channel layers connecting the first and second S/D features, a gate structure engaging the one or more semiconductor channel layers, a metal wiring layer at a backside of the semiconductor structure, an S/D contact electrically connecting the first S/D feature to the metal wiring layer, and a seal layer between the metal wiring layer and the gate structure. The seal layer is spaced away from the gate structure by an air gap therebetween.

Provided are a method for transferring a compound semiconductor single crystal thin film layer and a method for preparing a single crystal GaAs—OI composite wafer, including: preparing a graphite transition layer on a first substrate; growing the compound semiconductor single crystal thin film layer on the graphite transition layer; preparing a first dielectric layer on the compound semiconductor single crystal thin film layer; preparing a second dielectric layer on a second substrate; combining the first substrate and the second substrate by bonding the first dielectric layer and the second dielectric layer; applying a lateral external pressure, such that the compound semiconductor single crystal thin film layer and the first substrate are transversely split at the graphite transition layer, and the compound semiconductor single crystal thin film layer is transferred to the second substrate.

A long channel field-effect transistor is incorporated in a semiconductor structure. A semiconductor fin forming a channel region is configured as a loop having an opening therein. A dielectric isolation region is within the opening. Source/drain regions epitaxially grown on fin end portions within the opening are electrically isolated by the isolation region. The source/drain regions, the isolation region and the channel are arranged as a closed loop. The semiconductor structure may further include a short channel, vertical transport field-effect transistor.

A long channel field-effect transistor is incorporated in a semiconductor structure. A semiconductor fin forming a channel region is configured as a loop having an opening therein. A dielectric isolation region is within the opening. Source/drain regions epitaxially grown on fin end portions within the opening are electrically isolated by the isolation region. The source/drain regions, the isolation region and the channel are arranged as a closed loop. The semiconductor structure may further include a short channel, vertical transport field-effect transistor.