The present disclosure provides a semiconductor device structure with a manganese-containing interconnect structure and a method for forming the semiconductor device structure. The semiconductor device structure includes a first interconnect structure disposed in a semiconductor substrate, a dielectric layer disposed over the semiconductor substrate, and a second interconnect structure disposed in the dielectric layer and electrically connected to the first interconnect structure. The first interconnect structure includes a first conductive line, and a first manganese-containing layer disposed over the first conductive line. The second interconnect structure includes a second conductive line, and a second manganese-containing layer disposed between the second conductive line and the dielectric layer.

Interconnect structures that maximize integrated circuit (IC) density and corresponding formation techniques are disclosed. An exemplary IC device includes a gate layer extending along a first direction. An interconnect structure disposed over the gate layer includes odd-numbered interconnect routing layers oriented along a second direction that is substantially perpendicular to the first direction and even-numbered interconnect routing layers oriented along a third direction that is substantially parallel to the first direction. In some implementations, a ratio of a gate pitch of the gate layer to a pitch of a first of the even-numbered interconnect routing layers to a pitch of a third of the even-numbered interconnect routing layers is 3:2:4. In some implementations, a pitch of a first of the odd-numbered interconnect routing layers to a pitch of a third of the odd-numbered interconnect routing layers to a pitch of a seventh of the odd-numbered interconnect routing layers is 1:1:2.

A film forming method of forming a carbon film includes: cleaning an interior of a processing container by using oxygen-containing plasma in a state in which no substrate is present inside the processing container; subsequently, extracting and removing oxygen inside the processing container by using plasma in the state in which no substrate is present inside the processing container; and subsequently, loading a substrate into the processing container and forming the carbon film on the substrate through plasma CVD using a processing gas including a carbon-containing gas, wherein the cleaning, the extracting and removing the oxygen, and the forming the carbon film are repeatedly performed.

A film forming method includes: providing the substrate into the processing container; forming a metal-based film on the substrate within the processing container; and subsequently, supplying a Si-containing gas into the processing container in a state in which the substrate is provided within the processing container.

A cryo-compatible quantum computing arrangement includes a microelectronic quantum computing component having a substrate structure, a plurality of first contact elements and a plurality of conductive feedthroughs through the substrate structure, wherein the conductive feedthroughs are electrically connected on a first main surface area of the substrate structure to associated first contact elements of the microelectronic quantum computing component, and a further microelectronic component having a plurality of second contact elements, wherein on a second main surface area of the substrate structure, the conductive feedthroughs are electrically connected to associated second contact elements of the further microelectronic component, and wherein the conductive feedthroughs each include, between the first and second contact elements, a layer element including a first material that is superconducting at a quantum computing operating temperature, and a filling element including a second material that is electrically conductive.

The present technique relates to an imaging element and a distance measurement module capable of reducing parasitic capacity._A distance measurement module includes: a first wiring that connects predetermined transistors in first adjacent pixels to a via formed in one of first adjacent pixels and connected to a wiring formed in another layer; and a second wiring that connects predetermined transistors in second adjacent pixels to a via formed in a pixel that is adjacent to one of second adjacent pixels and connected to a wiring formed in another layer, in which the first wiring is connected to a redundant wiring. The present technique can be applied to a distance measurement sensor that performs distance measurement, for example.

A semiconductor device includes: a semiconductor substrate; an upper surface electrode formed on an upper surface side of the semiconductor substrate; an insulating film formed on the upper surface side of the semiconductor substrate; and a lower surface electrode formed on a lower surface side of the semiconductor substrate and having a larger area than that of the upper surface electrode, wherein the upper surface electrode and the lower surface electrode are electrodes having a compressive stress.

A method includes forming a gate structure over a substrate; forming a source/drain region adjacent the gate structure; forming a first interlayer dielectric (ILD) over the source/drain region; forming a contact plug extending through the first ILD that electrically contacts the source/drain region; forming a silicide layer on the contact plug; forming a second ILD extending over the first ILD and the silicide layer; etching an opening extending through the second ILD and the silicide layer to expose the contact plug, wherein the silicide layer is used as an etch stop during the etching of the opening; and forming a conductive feature in the opening that electrically contacts the contact plug.

A semiconductor structure and method of manufacturing a semiconductor structure are provided. The semiconductor structure comprises at least one two-dimensional (2D) conductive structure; a dielectric layer disposed on the 2D conductive structure; and at least one interconnect structure disposed in the dielectric layer and extending into the 2D conductive structure, wherein the interconnect structure laterally connects to at least one edge of the 2D conductive structure.

Various embodiments of the present disclosure are directed towards methods for forming conductive lines and conductive sockets using mandrels with turns, as well as the resulting conductive lines and sockets. A conductive socket of the present disclosure may have a top layout with at least one turn and with a width that is substantially the same as that of conductive lines along the at least one turn. Such a top layout may reduce loading during formation of the conductive socket. Conductive lines of the present disclosure may comprise outer conductive lines and inner conductive lines having ends laterally offset from ends of the outer conductive lines along lengths of the conductive lines. Formation of the inner and outer conductive lines using a mandrel with a turn may enlarge a process window while cutting ends of a sidewall spacer structure from which the inner and outer conductive lines are formed.