Disclosed is a display device that includes an array substrate that includes a display region and a first non-display region, and includes a signal line connected to a pixel in the display region; a first signal transfer line that is at the first non-display region and transfers a test signal, and a second signal transfer line that transfers a test enable signal; a connection pattern connected to the first signal transfer line; a test transistor that is connected between the signal line and the connection pattern, and is connected to the second signal transfer line; and an electrostatic induction element that includes a dummy device in the form of either a dummy pattern and/or a dummy test transistor, the dummy pattern including a dummy connection pattern connected to the first signal transfer line, the dummy test transistor connected to the second signal transfer line.

Integrated circuits and methods for fabricating integrated circuits are provided. An exemplary method for fabricating an integrated circuit includes providing a substrate including a semiconductor layer over an insulator layer. The method includes selectively replacing portions of the semiconductor layer with insulator material to define an isolated semiconductor layer region. Further, the method includes selectively forming a relaxed layer on the isolated semiconductor layer region. Also, the method includes selectively forming a strained layer on the relaxed layer. The method forms a device over the strained layer.

An electronic device and manufacturing method of the electronic device are disclosed. The manufacturing method includes: providing a substrate; forming a thin film circuit on the substrate, wherein the thin film circuit comprises at least one thin film transistor and at least one conductive trace; forming at least one first connection pad on the substrate, wherein the first connection pad is electrically connected with the thin film transistor through the conductive trace; disposing the substrate on a driving circuit board, wherein the driving circuit board comprises at least one second connection pad adjacent to and corresponding to the first connection pad; and forming a conductive member covering at least a part of the second connection pad and the first connection pad, wherein the second connection pad is electrically connected with the first connection pad through the conductive member.

A TFT array substrate, its manufacturing method and a corresponding display device are disclosed. The TFT array substrate, includes a bearing substrate, a gate line and a data line arranged across each other on the bearing substrate, a pixel region defined by the gate line and the data line, and a thin film transistor, a pixel electrode and an active layer disposed in the pixel region. Specifically, a gate of the thin film transistor is connected to the gate line, a source thereof is connected to the data line and a drain thereof is connected to the pixel electrode. Further, an insulating layer is also formed above the source of the thin film transistor, and a drain trench is formed in the insulating layer. In addition, the drain of the thin film transistor is in the drain trench and is connected to the source through the active layer.

The present disclosure provides an array substrate for a display device and a manufacturing method thereof. A transparent electrode pattern (ITO) may be formed between a source/drain metal pattern and a passivation layer located above the source/drain metal pattern, which are formed in a passivation hole area of a non-active area of the array substrate. Accordingly, it may be possible to prevent display failure caused by a delamination phenomenon or peel-off of a material of the passivation layer due to the lack of adhesion strength between a metal layer and the passivation layer in the passivation hole area.

In formation of a gate electrode, a metal film forming a gate electrode of TFT is formed on a gate insulating film covering a semiconductor layer having an island shape, the gate electrode is formed on the metal film by dry etching, and the exposed gate electrode is subjected to a plasma treatment using oxygen or nitrogen. This prevents formation of needle-shaped or granular crystal while a reduction in production efficiency is suppressed.

The present disclosure provides a TFT substrate and a manufacturing method thereof and a manufacturing method of an OLED panel. In the manufacturing method of the TFT substrate of the present disclosure, firstly formed a first inter layer dielectric covering the gate and the active layer on the buffer layer, wherein material of the first inter layer dielectric is provided as silicon oxynitride; Further, forming a second inter layer dielectric on the first inter layer dielectric, wherein material of the second inter layer dielectric is provided as silicon oxide, which can prevent excessive hydrogen elements from being introduced into the active layer, improve the working stability of the TFT device. The TFT substrate of the present disclosure is manufactured by using the above manufacturing method of a TFT substrate, the gate and the active layer have stable performance, and the TFT device has better working stability.

A laser crystallization apparatus includes: a plurality of laser generators which generates an incident laser beam; an optical system which optically converts the incident laser beam to an output laser beam; a process chamber in which a thin film formed on a substrate is crystallized by the output laser beam radiated thereto; a first monitoring device which detects a synthesized pulse of the output laser beam; a second monitoring device which detects individual pulses of the incident laser beam; and a controller which controls oscillation times of the plurality of laser generators. The controller generates a plurality of synthesized pulses by combining the individual pulses of the incident laser beam, and derives an optimal synthesized pulse from the plurality of synthesized pulses.

A peeling method at low cost with high mass productivity is provided. A silicon layer having a function of releasing hydrogen by irradiation with light is formed over a formation substrate, a first layer is formed using a photosensitive material over the silicon layer, an opening is formed in a portion of the first layer that overlaps with the silicon layer by a photolithography method and the first layer is heated to form a resin layer having an opening, a transistor including an oxide semiconductor in a channel formation region is formed over the resin layer, a conductive layer is formed to overlap with the opening of the resin layer and the silicon layer, the silicon layer is irradiated with light using a laser, and the transistor and the formation substrate are separated from each other.

The present application discloses a mother substrate comprising a first region comprising a plurality of display substrate units; and a second region; the first region comprises a buffer layer on and in contact with a base substrate, the second region comprises a mat layer on and in contact with the base substrate for reducing segment difference between the first region and the second region.