Methods for fabricating an IC structure, e.g., for fabricating a metallization stack portion of an IC structure, as well as related semiconductor devices, are disclosed. An example fabrication method includes splitting metal lines that are supposed to be included at a tight pitch in a single metallization layer into two vertically-stacked layers (hence the term “vertical metal splitting”) by using helmets and wrap-around dielectric spacers. Metal lines split into two such layers may be arranged at a looser pitch in each layer, compared to the pitch at which metal lines of the same size would have to be arranged if there were included in a single layer. Increasing the pitch of metal lines may advantageously allow decreasing the parasitic metal-to-metal capacitance associated with the metallization stack.

Provided is a semiconductor module including: an insulating circuit board that includes an insulating board and a conductive circuit pattern provided on an upper surface of the insulating board; a semiconductor chip that is provided above the insulating circuit board; a solder portion that bonds the circuit pattern and the semiconductor chip; and one or more temperature gradient adjustment portions configured to be bonded to the insulating circuit board and have at least one surface disposed to face at least one surface of the solder portion. The insulating circuit board is warped in a first direction. At least one of the temperature gradient adjustment portions is disposed at a place where an amount of warpage of the insulating circuit board in the first direction is smaller than an average amount of warpage of the insulating circuit board in the first direction.

An insulating component includes an insulating substrate, a metal layer, a bond, and a lead terminal. The plate-like insulating substrate has a groove continuous from its upper to side surfaces. The metal layer includes a first metal layer on the upper surface of the insulating substrate and a second metal layer on an inner surface of the groove continuous with the first metal layer. The bond is on an upper surface of the metal layer. The lead terminal is on an upper surface of the first metal layer with the bond in between, and overlaps the groove. The bond includes a first bond fixing the lead terminal to the first metal layer and a second bond on an upper surface of the second metal layer continuous with the first bond. The groove includes an inner wall having a ridge. The second bond is between the ridge and the lead terminal.

An electronic package structure and its manufacturing method are provided. The electronic package structure includes an interposer, a circuit board, a chip, and a circuit structure. The interposer includes an interposer substrate and a coaxial conductive element located in the interposer substrate. The interposer substrate includes a cavity. The coaxial conductive element includes a first conductive structure, a second conductive structure surrounding the first conductive structure, and a first insulation structure. The first insulation structure is disposed between the first and second conductive structures. The circuit board is disposed on a lower surface of the interposer substrate and electrically connected to the coaxial conductive element. The chip is disposed in the cavity and located on the circuit board, so as to be electrically connected to the circuit board. The circuit structure is disposed on an upper surface of the interposer substrate and electrically connected to the coaxial conductive element.

A semiconductor device including an insulated circuit board. The insulated circuit board includes an insulating board having an outer edge and a plurality of corners, and a plurality of circuit patterns formed on a front surface of the insulating board. The plurality of circuit patterns have a plurality of outer-edge corners facing the outer edge of the insulating board, among which outer-edge corners corresponding to the corners of the insulating board are smaller in curvature than outer-edge corners that do not correspond to the corners of the insulating board.

A substrate structure, a package structure, and a method for manufacturing an electronic package structure provided. The substrate structure includes a dielectric layer, a trace layer, and at least one wettable flank. The dielectric layer has a first surface and a second surface opposite to the first surface. The trace layer is embedded in the dielectric layer and exposed from the first surface of the dielectric layer. The at least one wettable flank is stacked with a portion of the trace layer embedded in the dielectric layer.

The disclosure provides a low-cost near-hermetic package, which may a substrate configured to support one or more internal components. The package may also include an enclosure comprising a cavity surrounding the one or more internal components and a first sidewall extending upward from the substrate. The first sidewall may be coupled to the substrate. The package may further include a first flexible circuit comprising conductive traces configured to connect to the one or more internal components. The first flexible circuit may include a first section outside the first sidewall of the enclosure, a second section inside the enclosure, and a third section between the first section and the second section joining to the enclosure and the substrate.

Provided is a semiconductor module including: an insulating circuit board that includes an insulating board and a conductive circuit pattern provided on an upper surface of the insulating board; a semiconductor chip that is provided above the insulating circuit board; a solder portion that bonds the circuit pattern and the semiconductor chip; and one or more temperature gradient adjustment portions configured to be bonded to the insulating circuit board and have at least one surface disposed to face at least one surface of the solder portion. The insulating circuit board is warped in a first direction. At least one of the temperature gradient adjustment portions is disposed at a place where an amount of warpage of the insulating circuit board in the first direction is smaller than an average amount of warpage of the insulating circuit board in the first direction.

A heat radiating substrate (10) (circuit board) includes: an insulating layer (11) (insulating substrate); and a circuit pattern (20) of a metal provided on the insulating layer (11) in direct contact with the insulating layer (11), in which the circuit pattern (20) has a first circuit pattern formed in a first region on the insulating layer (11) and a second circuit pattern (120) formed in a second region on the insulating layer (11), and the first region (that is, the first circuit pattern) surrounds and closes the second region (that is, second circuit pattern (120)) when viewed in a top view.

In some examples, a sensor package includes a semiconductor die having a sensor; a mold compound covering a portion of the semiconductor die; and a cavity formed in a top surface of the mold compound, the sensor being in the cavity. The sensor package includes an adhesive abutting the top surface of the mold compound, and a semi-permeable film abutting the adhesive and covering the cavity. The semi-permeable film is approximately flush with at least four edges of the top surface of the mold compound.