A packaging structure and a power amplifier, the packaging structure including a first component, a second component, a printed circuit board, and a metal plate having an etched pattern. The printed circuit board is disposed on the metal plate, and the printed circuit board has an open slot. The first component is disposed in the open slot, and the first component is disposed on the metal plate. The first component is connected to the printed circuit board, the second component is disposed on the printed circuit board, and the second component is connected to the printed circuit board.

A circuit board is provided, including: a core board, defining a plurality of slots, the plurality of slots including a plurality of first sub-slots and a plurality of second sub-slots disposed beneath the first sub-slots. Each of the second sub-slots is located beneath a corresponding first sub-slot of the first sub-slots; and a plurality of chip assemblies, arranged in the slots and including a plurality of first chips located in the first sub-slots and a plurality of second chips located in the second sub-slots. Each of the first chips is connected in series with one of the second chips at a corresponding position to form a plurality of chipsets; the chipsets are connected in parallel with each other; an end of the chipsets is connected to a first power signal layer, and the other end of the plurality of chipsets is connected to a ground layer.

A heat radiating substrate includes an insulating layer (11) (insulating substrate) and a circuit pattern (20) of a metal provided on the insulating layer (11) in direct contact with the insulating layer (11), in which a contour line of the circuit pattern (20) has a corner portion (27) that forms a curved line exhibiting a circular arc with a radius of 0.2 mm or more and 5 mm or less when viewed in a top view.

An electronic module for a half-bridge circuit includes a base substrate with an insulating layer between a first metal layer and a second metal layer. A trench formed through the first metal layer electrically isolates first, second, and third portions of the first metal layer from one another. A high-side switch includes an enhancement-mode transistor and a depletion-mode transistor. The depletion-mode transistor includes a III-N material structure on an electrically conductive substrate. A drain electrode of the depletion-mode transistor is connected to the first portion, a source electrode of the enhancement-mode transistor is connected to the second portion, a drain electrode of the enhancement-mode transistor is connected to a source electrode of the depletion-mode transistor, a gate electrode of the depletion-mode transistor is connected to the electrically conductive substrate, and the electrically conductive substrate is connected to the second portion.

According to one or more embodiments, a semiconductor device includes a support having a recess. A plurality of semiconductor chips are stacked on each other in the recess. A plurality of columnar electrodes in the recess extend from the semiconductor chips toward an opening of the support. A wiring layer is disposed over the opening. The recess is filled with an insulating material to cover the semiconductor chips and the columnar electrodes.

A semiconductor module includes a semiconductor device having a gate runner extending in a first direction at an upper surface of the semiconductor device, and a metal wiring plate having a first bonding portion with a bonding surface to which the upper surface of the semiconductor device is bonded via a first bonding material. The first bonding portion has a plurality of first protrusions at the bonding surface. Each first protrusion protrudes toward the semiconductor device, and is provided in a position away from the gate runner by a first distance in a plan view of the semiconductor module.

A semiconductor apparatus includes a metal base plate, an upper surface ceramic substrate provided on an upper surface of the metal base plate, a semiconductor device provided on the upper surface ceramic substrate, and a substrate that is provided in the metal base plate and includes an embedded ceramic substrate, an upper surface metal pattern provided on an upper surface of the embedded ceramic substrate, and a lower surface metal pattern provided on a lower surface of the embedded ceramic substrate, wherein a thermal conductivity of the upper surface metal pattern and a thermal conductivity of the lower surface metal pattern are larger than a thermal conductivity of the metal base plate.

A semiconductor device includes: a first conductive plate having a first obverse face facing in a thickness direction; a second conductive plate located apart from the first conductive plate in a first direction crossing the thickness direction and having a second obverse face facing in the same direction as the first obverse face; semiconductor elements joined to the first obverse face; and a conductive member. The semiconductor elements each include an electrode opposite to the first obverse face. The conductive member includes a main body portion, first junction portions individually and electrically joined to the electrodes of the semiconductor elements, and a second junction portion electrically joined to the second obverse face. Moreover, the conductive member includes a first connection portion connecting the main body portion and the first junction portions, and a second connection portion connecting the main body portion and the second junction portion.

The invention, which relates to the technical field of circuit boards, specifically discloses a method for manufacturing an embedded circuit board, an embedded circuit board, and an application thereof. The method includes: providing a substrate, wherein an electronic component is embedded in the substrate, a pad is arranged on a side surface of the electronic component, and an end surface of the pad is flush with a same side surface of the substrate; forming a metallic layer on a side surface of the substrate adjacent to the pad by sputtering, evaporation, electroplating or chemical vapor deposition; and patterning the metallic layer to obtain a circuit board covered with the metallic layer on the pad, wherein the metallic layer on the pad protrudes beyond the same side surface of the substrate.

A semiconductor apparatus includes a heatsink plate, a substrate disposed on the heatsink plate, a circuit pattern disposed on the substrate, a semiconductor chip disposed on the circuit pattern, a case fixed to the heatsink plate and surrounding an outer perimeter of the substrate, a terminal attached to the case, and a wire configured to electrically connect the terminal to the circuit pattern or to the semiconductor chip. In a plan view as viewed in the thickness direction of the heatsink plate, a portion of the circuit pattern overlaps the terminal.