A semiconductor device package is disclosed. The package according to one example includes a base having a main surface made of a metal, a dielectric side wall having a bottom surface facing the main surface, a joining material containing silver (Ag) and joining the main surface of the base and the bottom surface of the side wall to each other, a lead made of a metal joined to an upper surface of the side wall on a side opposite to the bottom surface, and a conductive layer not containing silver (Ag). The conductive layer is provided between the bottom surface and the upper surface of the side wall at a position overlapping the lead when viewed from a normal direction of the main surface. The conductive layer is electrically connected to the joining material, extends along the bottom surface, and is exposed from a lateral surface of the side wall.

A heat sink board according to an embodiment of the present invention includes a heat sink layer, an insulated layer formed on the heat sink layer, and a metal layer formed on the insulated layer, wherein both end parts of the heat sink layer and both end parts of the insulated layer are respectively projected further than the both end parts of the metal layer.

Provided a package substrate including an insulation substrate, a conductive layer provided in the insulation substrate, upper pads provided on an upper surface of the insulation substrate and electrically connected to the conductive layer, lower pads provided on a lower surface of the insulation substrate and electrically connected to the conductive layer, and at least one trench provided at a portion of the insulation substrate adjacent to at least one of the upper pads and configured to block stress, which is generated by an expansion of the insulation substrate, from spreading to the at least one of the upper pads.

Embodiments disclosed herein include electronic packages and methods of forming such electronic packages. In an embodiment, an electronic package comprises a package substrate, and a die on the package substrate. In an embodiment, the electronic package further comprises a voltage regulator on the package substrate adjacent to the die, and a metal printed circuit board (PCB) heat spreader. In an embodiment, a trace on the metal PCB heat spreader couples the die to the voltage regulator.

The invention relates to an electrical circuit, for example of the printed circuit type, for producing a module intended to be integrated into a chip card. This module has electrical contact—or connector—areas for the connection and communication of the chip to and with a read/write system. In order to give them a different colour from the gilded or silvered ones generally used, these electrical contact areas are at least partially covered with a surface layer comprising a compound of XpOqNrCs type, in which X may be Hf, Ta, Zr, Nb, Mo, Cr, V, Ti or Sc, with p, q>0 and r≥0 and/or s≥0. The invention also relates to a method for manufacturing such an electrical circuit.

An electronic module for a half-bridge circuit includes a base substrate with an insulating layer between a first metal layer and a second metal layer. A trench formed through the first metal layer electrically isolates first, second, and third portions of the first metal layer from one another. A high-side switch includes an enhancement-mode transistor and a depletion-mode transistor. The depletion-mode transistor includes a III-N material structure on an electrically conductive substrate. A drain electrode of the depletion-mode transistor is connected to the first portion, a source electrode of the enhancement-mode transistor is connected to the second portion, a drain electrode of the enhancement-mode transistor is connected to a source electrode of the depletion-mode transistor, a gate electrode of the depletion-mode transistor is connected to the electrically conductive substrate, and the electrically conductive substrate is connected to the second portion.

An inductor assembly and a manufacturing method for an inductor assembly are provided. The inductor assembly includes a circuit board, a magnetic component, and a winding wire. The circuit board defines a groove body, the magnetic component is embedded in the groove body, and the winding wire is arranged on the magnetic component, surrounds along a thickness direction of the magnetic component, and is electrically connected to the circuit board

In some examples, a sensor package includes a semiconductor die having a sensor; a mold compound covering a portion of the semiconductor die; and a cavity formed in a top surface of the mold compound, the sensor being in the cavity. The sensor package includes an adhesive abutting the top surface of the mold compound, and a semi-permeable film abutting the adhesive and covering the cavity. The semi-permeable film is approximately flush with at least four edges of the top surface of the mold compound.

In a ceramic/aluminum bonded body according to the present invention, a ceramic member and an aluminum member formed of aluminum or an aluminum alloy are bonded to each other, the ceramic member has a ceramic main body formed of silicon nitride, and an aluminum nitride layer or an aluminum oxide layer formed on the surface of the ceramic main body to which the aluminum member is bonded, the ceramic member and the aluminum member are bonded to each other through the aluminum nitride layer or the aluminum oxide layer, the ceramic main body is provided with silicon nitride phases and a glass phase formed between the silicon nitride phases, Al is present in a portion of the glass phase of the ceramic main body at an interface with the aluminum nitride layer or aluminum oxide layer.

To improve cooling capability, power conversion apparatus 1 that converts a direct current voltage into an alternating current voltage includes: first substrate 100 on which power conversion circuit 2 is mounted; second substrate 200 on which driving circuit 3 that drives power conversion circuit 2 is mounted; and shield plate 300 that is disposed between first substrate 100 and second substrate 200, and first substrate 100 is a metal substrate.