A cryogenic multilayer interconnect structure has a substrate including a molybdenum layer, a first insulating layer on the substrate and a first superconducting layer on the first insulating layer. The molybdenum layer has a coefficient of thermal expansion (CTE) that is well matched with the CTE of cryogenic electronic chips that are to be attached to the cryogenic multilayer interconnect structure. The substrate may be a copper clad molybdenum substrate that provide the CTE advantages provided by the molybdenum layer while also providing an increased thermal conductivity to improve the dissipation of heat generated by cryogenic electronic chips coupled to the substrate.

Generally, the present disclosure provides example embodiments relating to a package that may be attached to a printed circuit board (PCB). In an embodiment, a structure includes a package. The package includes one or more dies and metal pads on an exterior surface of the package. At least some of the metal pads are first solder ball pads. The structure further includes pins, and each of the pins is attached to a respective one of the metal pads.

To improve cooling capability, power conversion apparatus 1 that converts a direct current voltage into an alternating current voltage includes: first substrate 100 on which power conversion circuit 2 is mounted; second substrate 200 on which driving circuit 3 that drives power conversion circuit 2 is mounted; and shield plate 300 that is disposed between first substrate 100 and second substrate 200, and first substrate 100 is a metal substrate.

A semiconductor device includes channel region, first and second two-dimensional metallic contacts, a gate structure, and first and second metal contacts. The channel region includes a two-dimensional semiconductor material. The first two-dimensional metallic contact is disposed at a side of the channel region and includes a two-dimensional metallic material. The second two-dimensional metallic contact is disposed at an opposite side of the channel region and includes the two-dimensional metallic material. The gate structure is disposed on the channel region in between the first and second two-dimensional metallic contacts. The first metal contact is disposed at an opposite side of the first two-dimensional metallic contact with respect to the channel region. The second metal contact is disposed at an opposite side of the second two-dimensional metallic contact with respect to the channel region. The first and second two-dimensional metallic contacts contact sideways the channel region to form lateral semiconductor-metallic junctions.

An electronic component mounting package is provided with a metal substrate including a first surface, a recessed portion opening on the first surface, and a mounting portion for an electronic component in the recessed portion, and a wiring conductor located on the first surface via an insulation layer other than at the opening of the recessed portion, and a metal oxide film is included on at least a part of the inner side surface of the recessed portion.

A radio frequency (“RF”) transistor amplifier die includes a semiconductor layer structure having a plurality of transistor cells, and an insulating layer on a surface of the semiconductor layer structure. Conductive pillar structures protrude from the insulating layer opposite the surface of the semiconductor layer structure, and are configured to provide input signal, output signal, or ground connections to the transistor cells. The ground connections are arranged between the input and/or output signal connections to the transistor cells. Related devices and packages are also discussed.

A radio frequency module in which the loop shape of a wire can be stable by disposing a protruding electrode at a bonding ending-point portion when a bonding wire forms a shield between components is provided. A radio frequency module includes a multilayer wiring board, components to mounted on an upper surface of the multilayer wiring board, a shield member formed of a plurality of bonding wires to cover the component, and a protruding electrode provided at a bonding ending-point portion of each of the bonding wires. Since the protruding electrode is provided at the bonding ending-point portion of each of the bonding wires, undesired bending can be prevented on a second bond side of the bonding wire. The shield member to cover side surfaces and a top surface of the component can be easily formed.

Circuit board includes conductive plate, core dielectric layer, metallization layer, first build-up stack, second build-up stack. Conductive plate has channels extending from top surface to bottom surface. Core dielectric layer extends on covering top surface and side surfaces of conductive plate. Metallization layer extends on core dielectric layer and within channels of conductive plate. Core dielectric layer insulates metallization layer from conductive plate. First build-up stack is disposed on top surface of conductive plate and includes conductive layers alternately stacked with dielectric layers. Conductive layers electrically connect to metallization layer. Second build-up stack is disposed on bottom surface of conductive plate. Second build-up stack includes bottommost dielectric layer and bottommost conductive layer. Bottommost dielectric layer covers bottom surface of conductive plate. Bottommost conductive layer is disposed on bottommost dielectric layer and electrically connects to metallization layer. First build-up stack includes more conductive and dielectric layers than second build-up stack.

The present disclosure provides a circuit board and a method for manufacturing the circuit board. The circuit board may include: a base board, an embedded component, and an attached component. The base board may define a groove, the embedded component can be disposed in the groove. The attached component can be attached to at least one surface of the base board and connected to the embedded component.

A device includes an electrically conductive substrate, one or more intermediate layer(s) in contact with the electrically conductive substrate and/or one or more interconnect layer, and a surface mounted electrical component contacting the interconnect layer.