The invention, which relates to the technical field of circuit boards, specifically discloses a method for manufacturing an embedded circuit board, an embedded circuit board, and an application thereof. The method includes: providing a substrate, wherein an electronic component is embedded in the substrate, a pad is arranged on a side surface of the electronic component, and an end surface of the pad is flush with a same side surface of the substrate; forming a metallic layer on a side surface of the substrate adjacent to the pad by sputtering, evaporation, electroplating or chemical vapor deposition; and patterning the metallic layer to obtain a circuit board covered with the metallic layer on the pad, wherein the metallic layer on the pad protrudes beyond the same side surface of the substrate.

A bonded body has a structure in which an insulating resin member made of an insulating resin and a metal part made of a metal are bonded. In the bonded body, a bonded interface between the insulating resin member and the metal part has an uneven shape including a protrusion in which the metal part protrudes toward an insulating resin member side and a recess in which the metal part retracts from the insulating resin member side, at least one of a kurtosis Rku of contour curve at the bonded interface of the metal part and a kurtosis Sku of contour surface at the bonded interface of the metal part is in a range of 2.75 or more and 6.00 or less, and an overhang rate that indicates a length ratio of regions overlapping in a lamination direction in a direction along the bonded interface is 7% or more.

A substrate for light emitting elements includes: a resin layer having a sheet shape, a first surface, and a second surface located opposite to the first surface. The second surface has one or more groove portions that includes a first groove portion. The second surface is divided by the first groove portion into a plurality of regions that include the first region and the second region. The resin layer includes a plurality of fiber bundles and a resin. The substrate includes a first electrically-conductive layer located in the first region of the resin layer; and a second electrically-conductive layer located in the second region of the resin layer. In a plan view, the at least one continuous fiber bundle extends inside the resin layer across the first region, a portion below the first groove portion, and the second region.

A metal base substrate of the present invention is a metal base substrate including a metal substrate, an insulating layer laminated on one surface of the metal substrate, and a circuit layer laminated on a surface of the insulating layer opposite to the metal substrate side, in which the circuit layer is made of a metal having a semi-softening temperature of 100° C. or higher and 150° C. or lower, the insulating layer contains a resin, and a relationship between a thickness t (μm) of the insulating layer and an elastic modulus E (GPa) of the insulating layer at 100° C. satisfies a following formula (1).

10<t/E  (1)

A semiconductor sensor includes a substrate, a dielectric layer on the substrate, a first electrode on the dielectric layer, and a second electrode spaced apart from the first electrode and on the dielectric layer, a semiconductor sheet between the first electrode and the second electrode on the dielectric layer and electrically connecting the first electrode and the second electrode to each other, a third electrode at least a portion of which is covered by the dielectric layer and faces the semiconductor sheet with the dielectric layer interposed therebetween, and multiple first attraction portions at least on a surface of the third electrode or in or on the dielectric layer on the surface of the third electrode and attracting an object to be detected.

A semiconductor device is made by: forming a metal film containing Al on a surface of a substrate product including a substrate and a nitride semiconductor layer on the substrate, the metal film covering a via hole forming predetermined region, and the surface of the substrate product being located on the nitride semiconductor layer side, forming an etching mask having an opening for exposing the via hole forming predetermined region on a back surface of the substrate product, the back surface of the substrate product being located on the substrate side, and forming a via hole in the substrate product by reactive ion etching, the via hole reaching the surface from the back surface and exposing the metal film. In the forming of the via hole, a reaction gas containing fluorine is used during a period at least including a termination of etching.

A semiconductor package includes: an electrically insulating core and an electrically conductive first via extending through a periphery region of the core, the core having glass fibres interwoven with epoxy material and one or more regions where the glass fibres are exposed from the epoxy material; a power semiconductor die embedded in an opening in the core and having a first load terminal bond pad which faces a same direction as a first side of the core, a second load terminal bond pad which faces a same direction as a second side of the core, and a control terminal bond pad; a resin that encases the power semiconductor die; a first contact pad plated on the first via at the second side of the core; and a second contact pad plated on the first load terminal bond pad of the power semiconductor die at the first side of the core.

A power module includes a mount layer, a control layer, and a drive layer that are formed on an electrically insulative substrate and multiple power semiconductor elements mounted on the mount layer in one direction and each including a first drive electrode connected to the mount layer, a second drive electrode connected to the drive layer, and a control electrode connected to the control layer. A control terminal is connected to the control layer and a detection terminal is connected to the drive layer. At least one of the control layer and the drive layer includes a detour portion that detours to reduce a difference between the power semiconductor elements in a sum of a length of a first conductive path between the control electrode and the control terminal and a length of a second conductive path between the second drive electrode and the detection terminal.

A heat radiating substrate (10) includes an insulating layer (11) and a circuit pattern (20) of a metal formed on the insulating layer (11) in direct contact with the insulating layer (11), in which a side surface (that is, metal layer side surface (23)) of the circuit pattern (20) has a region in which an angle θ formed by a surface (insulating layer upper surface (11a)) of the insulating layer (11) (insulating substrate) and a tangential line L at a middle portion (X1) in a height direction in a cross-sectional view perpendicular to an extending direction of the metal is 80 degrees or more and 100 degrees or less.

An article including a magnetic-containing layer having a first surface and a second surface opposite the first; a first reflector layer external to the first surface of the magnetic-containing layer; a second reflector layer external to the second surface of the magnetic-containing layer; a first selective light modulator layer external to the first reflector layer; a second selective light modulator layer external to the second reflector layer; a first absorber layer external to the first selective light modulator layer; and a second absorber layer external to the second selective light modulator layer; wherein at least one of the first and second selective light modulator layers comprises at least one of a curing agent, and at least one coating aid is disclosed. Methods of making the disclosed article are also disclosed.