A semiconductor device includes a first insulation member, a first drive conductive layer, a first semiconductor element, a second insulation member, a second drive conductive layer, a second semiconductor element, a connection member, and an encapsulation resin. The encapsulation resin encapsulates the first semiconductor element, the second semiconductor element, and the connection member. The connection member has a higher thermal conductivity than the encapsulation resin. The connection member forms a heat conduction path between the first insulation member and/or the first drive conductive layer and the second insulation member and/or the second drive conductive layer. The connection member has a higher thermal conductivity than the encapsulation resin.

A semiconductor device includes a first insulation member, a first drive conductive layer, a first semiconductor element, a second insulation member, a second drive conductive layer, a second semiconductor element, a connection member, and an encapsulation resin. The encapsulation resin encapsulates the first semiconductor element, the second semiconductor element, and the connection member. The connection member has a higher thermal conductivity than the encapsulation resin. The connection member forms a heat conduction path between the first insulation member and/or the first drive conductive layer and the second insulation member and/or the second drive conductive layer. The connection member has a higher thermal conductivity than the encapsulation resin.

Embodiments described herein may be related to apparatuses, processes, and techniques related to a vertical high-speed bridge placed within a BGA field of a microelectronic package. In embodiments, the bridge is used for high-speed signaling and may include plated through hole vias that are at a smaller pitch than the pitch of the BGA field. In embodiments, the vertical high-speed bridge may be constructed from a glass wafer or a glass panel using a laser-assisted etching of glass interconnects process. Other embodiments may be described and/or claimed.

A connector may include: a first substrate having a top surface, a bottom surface opposite to the top surface of the top substrate and a side surface joining an edge of the top surface of the first substrate and joining an edge of the bottom surface of the first substrate; a second substrate having a top surface, a bottom surface opposite to the top surface of the second substrate and a side surface joining an edge of the top surface of the second substrate and joining an edge of the bottom surface of the second substrate, wherein the side surface of the second substrate faces the side surface of the first substrate, wherein the top surfaces of the first and second substrates are coplanar with each other at a top of the connector and the bottom surfaces of the first and second substrates are coplanar with each other at a bottom of the connector; and a plurality of metal traces between, in a first horizontal direction, the side surfaces of the first and second substrates, wherein each of the plurality of metal traces has a top end at the top of the connector and a bottom end at the bottom of the connector.

A semiconductor package structure includes a first electronic component, a conductive element and a first redistribution structure. The first electronic component has a first surface and a second surface opposite to the first surface, and includes a first conductive via. The first conductive via has a first surface exposed from the first surface of the first electronic component. The conductive element is disposed adjacent to the first electronic component. The conductive element has a first surface substantially coplanar with the first surface of the first conductive via of the first electronic component. The first redistribution structure is configured to electrically connect the first conductive via of the first electronic component and the conductive element.

In examples, a semiconductor package comprises a ceramic substrate and first and second metal layers covered by the ceramic substrate. The first metal layer is configured to carry signals at least in a 20 GHz to 28 GHz frequency range. The package comprises a semiconductor die positioned above the first and second metal layers and coupled to the first metal layer. The package comprises a ground shield positioned in a horizontal plane between the semiconductor die and the first metal layer, the ground shield including an orifice above a portion of the first metal layer. The package includes a metal seal ring coupled to a top surface of the ceramic substrate, the metal seal ring having a segment that is vertically aligned with a segment of the ground shield. The segment of the ground shield is between the orifice of the ground shield and a horizontal center of the ground shield. The package comprises a metal lid coupled to a top surface of the metal seal ring.

A semiconductor packaging structure includes: a substrate, a redistribution layer having one conductive plugs, metal bumps disposed on the redistribution layer, and electrically connected with the redistribution layer including the conductive plug; a semiconductor chip over the redistribution layer and aligned to and electrically connected with the conductive plug; an underfill layer filling a gap between the redistribution layer and the semiconductor chip and the conductive plugs; a polymer layer on the redistribution layer, over the plurality of metal bumps, the underfill layer and the semiconductor chip, exposing only top parts of the plurality of metal bumps and top part of the semiconductor chip; and an antenna module disposed on the second surface of the substrate.

A semiconductor packaging structure includes: a substrate, a redistribution layer having one conductive plugs, metal bumps disposed on the redistribution layer, and electrically connected with the redistribution layer including the conductive plug; a semiconductor chip over the redistribution layer and aligned to and electrically connected with the conductive plug; an underfill layer filling a gap between the redistribution layer and the semiconductor chip and the conductive plugs; a polymer layer on the redistribution layer, over the plurality of metal bumps, the underfill layer and the semiconductor chip, exposing only top parts of the plurality of metal bumps and top part of the semiconductor chip; and an antenna module disposed on the second surface of the substrate.

To provide a wiring substrate, an electronic device, and an electronic module the size of which can be easily reduced and the strength of which can be maintained. A wiring substrate includes an insulation substrate and an electrical wiring structure. The insulation substrate includes a recess section in one surface. A frame portion of the insulation substrate that forms a side surface which connects an opened surface and a bottom surface of the recess section to each other includes a first conductive portion having a plate shape in the frame portion.

A glass circuit board includes, on a glass substrate, a stress relief layer, a seed layer, and an electroplated layer including copper plating. The stress relief layer is an insulator formed by dry coating method and applies a compressive residual stress to the glass substrate at room temperature. The stress relief layer thus reduces cracking, fracturing or warpage of the glass substrate caused by thermal expansion and shrinkage of the copper plating due to heating and cooling of the glass circuit board during manufacturing or thermal cycling, ensuring high connection reliability of the glass circuit board.