A semiconductor device of embodiments includes an insulating substrate, a first main terminal, a second main terminal, an output terminal, a first metal layer connected to the first main terminal, a second metal layer connected to the second main terminal, a third metal layer disposed between the first metal layer and the second metal layer and connected to the output terminal, a first semiconductor chip and a second semiconductor chip provided on the first metal layer, a third semiconductor chip and a fourth semiconductor chip provided on the third metal layer, and a conductive member on the second metal layer. Then, the second metal layer includes a slit. The conductive member is provided between the end portion of the second metal layer and the slit.

A semiconductor power module comprises an insulating interposer comprising an insulative layer disposed between a lower metal layer, a first upper metal layer and a second upper metal layer, a semiconductor transistor die disposed on the first upper metal layer, an electrical connector connecting the semiconductor transistor die with the second upper metal layer, a housing enclosing the insulating interposer and the semiconductor transistor die, a first potting material covering at least selective portions of the semiconductor transistor die and the electrical connector; and a second potting material applied onto the first potting material, wherein the first and second potting materials are different from each other.

An electronic package, in which a heat dissipation structure is disposed on a carrier structure to form a packaging space for electronic components to be accommodated in the packaging space, and the electronic components are completely encapsulated by a heat dissipation material to prevent the electronic components exposing from the heat dissipation material so as to improve the heat dissipation effect.

A method is disclosed for producing a power semiconductor module that includes a substrate, at least one semiconductor body, a connecting element and a contact element. The method includes: arranging the substrate in a housing having walls; at least partly filling a capacity formed by the walls of the housing and the substrate with an encapsulation material; hardening the encapsulation material to form a hard encapsulation; and closing the housing, wherein the contact element extends from the connecting element through an interior of the housing and through an opening in a cover of the housing to an outside of the housing in a direction perpendicular to a first surface of a first metallization layer of the substrate.

A method is disclosed for producing a power semiconductor module that includes a substrate, at least one semiconductor body, a connecting element and a contact element. The method includes: arranging the substrate in a housing having walls; at least partly filling a capacity formed by the walls of the housing and the substrate with an encapsulation material; hardening the encapsulation material to form a hard encapsulation; and closing the housing, wherein the contact element extends from the connecting element through an interior of the housing and through an opening in a cover of the housing to an outside of the housing in a direction perpendicular to a first surface of a first metallization layer of the substrate.

A semiconductor device package includes a substrate having a surface, a conductive element disposed on the surface of the substrate, and an encapsulant disposed on the surface of the substrate and covering the conductive element. The conductive element has an upper surface facing away from the substrate and exposed from the encapsulant. Further, a roughness of the upper surface of the conductive element is greater than a roughness of a side surface of the conductive element.

A semiconductor package includes a package substrate, at least one semiconductor chip mounted on the package substrate, a molding member on the package substrate to cover at least a portion of the semiconductor chip, and a mechanical reinforcing member provided around the semiconductor chip within the molding member and extending in at least one direction.

A semiconductor package includes a package substrate, at least one semiconductor chip mounted on the package substrate, a molding member on the package substrate to cover at least a portion of the semiconductor chip, and a mechanical reinforcing member provided around the semiconductor chip within the molding member and extending in at least one direction.

A semiconductor device includes: a substrate; a semiconductor element arranged on the substrate; a plate-like member electrically connected to the semiconductor element; a first electrode formed on the semiconductor element and joined to the plate-like member with solder; a second electrode formed on the semiconductor element and spaced from the first electrode, and including a metal capable of forming an alloy with the solder; and a metal film formed on the semiconductor element and spaced from the second electrode in a region on the first electrode side as seen from the second electrode, in a two-dimensional view of the semiconductor element as seen from the plate-like member, and including a metal capable of forming an alloy with the solder.

A semiconductor device in which occurrence of peeling between a filling member and a metal terminal is suppressed is obtained. The semiconductor device includes: an insulating substrate having a front surface and a back surface, and having a semiconductor element joined to the front surface; a base plate joined to the back surface of insulating substrate; a case member surrounding insulating substrate; a filling member having an upper surface, covering insulating substrate, and filling a region surrounded by base plate and case member; and a metal member having a plate shape that leans toward an upper surface side of filling member inside filling member, has one end joined to the front surface of insulating substrate and another end separated from an inner wall of case member, and is exposed from the upper surface of filling member.