Various embodiments disclosed relate to methods of making omni-directional semiconductor interconnect bridges. The present disclosure includes semiconductor assemblies including a mold layer having mold material, a first filler material dispersed in the mold material, and a second filler material dispersed in the mold material, wherein the second filler material is heterogeneously dispersed.

A module includes an electronic component, an enclosure at least partially enclosing the electronic component and defining a module interface at which the module is configured to be mounted on a mounting base, and a gas flow-inhibiting sealing at the module interface and configured to inhibit gas from propagating from an exterior of the module towards the electronic component. An electronic device that includes the module and a method of manufacturing the module are also described.

A module includes an electronic component, an enclosure at least partially enclosing the electronic component and defining a module interface at which the module is configured to be mounted on a mounting base, and a gas flow-inhibiting sealing at the module interface and configured to inhibit gas from propagating from an exterior of the module towards the electronic component. An electronic device that includes the module and a method of manufacturing the module are also described.

An electroluminescent device, includes: a base substrate; a light emitting unit provided on the base substrate; a first accommodating structure surrounding the light emitting unit and provided on the base substrate; a first color rendering material filled in the first accommodating structure; a first inorganic thin film encapsulation layer covering the light emitting unit and the first color rendering material; a second accommodating structure provided on one side of the first inorganic thin film encapsulation layer distal to the first color rendering material; a second color rendering material filled in the second accommodating structure; and a second inorganic thin film encapsulation layer sealing the second color rendering material in the second accommodating structure; wherein the first color rendering material and the second color rendering material are capable of producing a color development reaction after mixture.

An electroluminescent device, includes: a base substrate; a light emitting unit provided on the base substrate; a first accommodating structure surrounding the light emitting unit and provided on the base substrate; a first color rendering material filled in the first accommodating structure; a first inorganic thin film encapsulation layer covering the light emitting unit and the first color rendering material; a second accommodating structure provided on one side of the first inorganic thin film encapsulation layer distal to the first color rendering material; a second color rendering material filled in the second accommodating structure; and a second inorganic thin film encapsulation layer sealing the second color rendering material in the second accommodating structure; wherein the first color rendering material and the second color rendering material are capable of producing a color development reaction after mixture.

The disclosure relates to an array substrate and a method for fabricating an array substrate. The array substrate includes a base substrate, a cover layer on the base substrate, an opening at least partially passing through the cover layer, a stress buffer structure adjacent to the opening and on a side of the cover layer facing the base substrate, wherein the stress buffer structure includes a phase change material, wherein a height of a portion of the cover layer on the phase change material is lower than a height of a portion of the cover layer adjacent to the phase change material.

The disclosure relates to an array substrate and a method for fabricating an array substrate. The array substrate includes a base substrate, a cover layer on the base substrate, an opening at least partially passing through the cover layer, a stress buffer structure adjacent to the opening and on a side of the cover layer facing the base substrate, wherein the stress buffer structure includes a phase change material, wherein a height of a portion of the cover layer on the phase change material is lower than a height of a portion of the cover layer adjacent to the phase change material.

A method of manufacturing a microelectromechanical system includes forming of an electromechanical element on a substrate. The method further includes preparation of an encapsulation package to form a sealed cavity integrating the electromechanical element, with the sealed cavity having a volume smaller than 10 mm.sup.3. The method includes physical vapor deposition of a getter film on the substrate or on a wall of the encapsulation package so that the getter film has a specific absorption surface area smaller than 8 m.sup.2/g, and sealing of the encapsulation package on the substrate by means of a thermal sealing cycle having a temperature enabling to activate said getter film.

A method of manufacturing a microelectromechanical system includes forming of an electromechanical element on a substrate. The method further includes preparation of an encapsulation package to form a sealed cavity integrating the electromechanical element, with the sealed cavity having a volume smaller than 10 mm.sup.3. The method includes physical vapor deposition of a getter film on the substrate or on a wall of the encapsulation package so that the getter film has a specific absorption surface area smaller than 8 m.sup.2/g, and sealing of the encapsulation package on the substrate by means of a thermal sealing cycle having a temperature enabling to activate said getter film.

A method of manufacturing a microelectromechanical system includes forming of an electromechanical element on a substrate. The method further includes preparation of an encapsulation package to form a sealed cavity integrating the electromechanical element, with the sealed cavity having a volume smaller than 10 mm.sup.3. The method includes physical vapor deposition of a getter film on the substrate or on a wall of the encapsulation package so that the getter film has a specific absorption surface area smaller than 8 m.sup.2/g, and sealing of the encapsulation package on the substrate by means of a thermal sealing cycle having a temperature enabling to activate said getter film.