The invention discloses a display panel, comprising: a first substrate including a display region and a peripheral region adjacent to each other; a plurality of pixel units disposed on the first substrate and located in the display region; a planarization layer disposed on the first substrate and located in the display region and the peripheral region; and an organic passivation layer disposed on the first substrate, covering the planarization layer and located in the display region and the peripheral region; wherein the planarization layer further comprises a first region planarization layer located in the display region, and a second region planarization layer located in the peripheral region, the first region planarization layer is formed with a first sidewall in a boundary region between the display region and the peripheral region, and a height of the first sidewall is greater than a height of the first region planarization layer. The invention can effectively reduce probability of the organic passivation layer on sidewalls of the passivation layers, and can better avoid moisture from penetrating the organic material into the display panel.

The present disclosure relates to a method for manufacturing a semiconductor package including vacuum-laminating a non-conductive film on a substrate on which a plurality of through silicon vias are provided and bump electrodes are formed, and then performing UV irradiation, wherein an increase in melt viscosity before and after UV irradiation can be adjusted to 30% or less, whereby a bonding can be performed without voids during thermo-compression bonding, and resin-insertion phenomenon between solders can be prevented, fillets can be minimized and reliability can be improved.

The present application provides a film containing: a compound (A) containing at least one selected from the group consisting of a maleimide compound and a citraconimide compound; an organic peroxide (B) containing at least one selected from the group consisting of organic peroxides represented by specific formulae; and an imidazole compound (C) represented by a specific formula.

A protective film forming agent that, in dicing of a semiconductor wafer, is used to form a protective film on the surface of the semiconductor wafer, can form a protective film that has excellent laser processability, and has excellent solubility of a light-absorbing agent; and a method for producing a semiconductor chip using the protective film forming agent. The protective film forming agent includes a water-soluble resin, a light-absorbing agent, a basic compound, and a solvent. The basic compound is an alkylamine, an alkanolamine, an imidazole compound, ammonia, or an alkali metal hydroxide. The light-absorbing agent content of the protective film forming agent is 0.1-10 mass % (inclusive).

It is an object to provide technology enabling suppression of contact deformation of pin fins during assembly of a semiconductor device and the like. A semiconductor device includes a base plate, a semiconductor element, and a resin member. The base plate has a plurality of pin fins on a lower surface thereof. The semiconductor element is mounted on an upper side of the base plate. The resin member covers at least a side surface of the semiconductor element. The resin member has a rib covering a side surface of the base plate, and a lower end of the rib is located below lower ends of the plurality of pin fins.

A semiconductor die is disclosed. The semiconductor die includes a semiconductor body, a metallization over part of the semiconductor body and including a noble metal at a top surface of the metallization, a bondwire having a foot bonded to the top surface of the metallization, and a sealing material covering the foot of the bondwire, the top surface of the metallization, and one or more areas outside the top surface of the metallization where oxide and/or hydroxide-groups would be present if exposed to air. The sealing material adheres to the foot of the bondwire and the one or more areas outside the top surface of the metallization where the oxide and/or hydroxide-groups would be present if exposed to air.

A protective film substance for laser processing includes a solution including a water-soluble resin, an organic solvent, and a light absorbent. The solution has an absorbance, i.e., an absorbance converted for a solution diluted 200 times, equal to 0.05 or more per an optical path length of 1 cm at a wavelength of 532 nm. Alternatively, the protective film substance for laser processing includes a solution including a water-soluble resin, an organic solvent, and a polyhydroxyanthraquinone derivative.

Disclosed herein are transistor electrode-channel arrangements, and related methods and devices. For example, in some embodiments, a transistor electrode-channel arrangement may include a channel material, source/drain electrodes provided over the channel material, and a sealant at least partially enclosing one or more of the source/drain electrodes, wherein the sealant includes one or more metallic conductive materials.

A resin composition containing a bismaleimide compound (A) containing a constituent unit represented by the following formula (1) and maleimide groups at both ends of the molecular chain, a radical polymerizable resin or compound (B) other than the bismaleimide compound (A), and a curing accelerator (C), wherein the radical polymerizable resin or compound (B) contains at least one selected from the group consisting of a citraconimide group, a vinyl group, a maleimide group, a (meth)acryloyl group and an allyl group.

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A semiconductor packaging structure includes: a substrate, a redistribution layer having one conductive plugs, metal bumps disposed on the redistribution layer, and electrically connected with the redistribution layer including the conductive plug; a semiconductor chip over the redistribution layer and aligned to and electrically connected with the conductive plug; an underfill layer filling a gap between the redistribution layer and the semiconductor chip and the conductive plugs; a polymer layer on the redistribution layer, over the plurality of metal bumps, the underfill layer and the semiconductor chip, exposing only top parts of the plurality of metal bumps and top part of the semiconductor chip; and an antenna module disposed on the second surface of the substrate.