In examples, a sensor package includes a semiconductor die, a sensor on the semiconductor die, and a mold compound covering the semiconductor die. The mold compound includes a sensor cavity over the sensor. The sensor package includes a polymer film member on the sensor and circumscribed by a wall of the mold compound forming the sensor cavity. The polymer film member is exposed to an exterior environment of the sensor package.

A semiconductor package includes: a first package substrate; a first semiconductor device mounted on the first package substrate; a second package substrate arranged on an upper part of the first semiconductor device; and a heat-dissipating material layer arranged between the first semiconductor device and the second package substrate and having a thermal conductivity of approximately 0.5 W/m.Math.K to approximately 20 W/m.Math.K, wherein the heat-dissipating material layer is in direct contact with an upper surface of the first semiconductor device and a conductor of the second package substrate.

[Problems] An object of the present invention is to provide a crystalline radical polymerizable composition which is excellent in flowability and is easy to handle. [Solution Means] The crystalline radical polymerizable composition for sealing electrical and electronic component according to the present invention is characterized by comprising at least a crystalline radical polymerizable compound, an inorganic filler, a silane coupling agent, and a radical polymerization initiator. In addition, in a preferred embodiment of the crystalline radical polymerizable composition for sealing electrical and electronic component according to the present invention, the crystalline radical polymerizable compound is characterized by comprising one or more selected from unsaturated polyester, epoxy (meth) acrylate, urethane (meth) acrylate, polyester (meth) acrylate, -polyether (meth) acrylate, radical polymerizable monomer and radical polymerizable polymer.

In an embodiment, a device includes: a first redistribution structure including a first dielectric layer; a die adhered to a first side of the first redistribution structure; an encapsulant laterally encapsulating the die, the encapsulant being bonded to the first dielectric layer with first covalent bonds; a through via extending through the encapsulant; and first conductive connectors electrically connected to a second side of the first redistribution structure, a subset of the first conductive connectors overlapping an interface of the encapsulant and the die.

A package substrate based on a molding process may include an encapsulation layer, a support frame located in the encapsulation layer, a base, a device located on an upper surface of the base, a copper boss located on a lower surface of the base, a conductive copper pillar layer penetrating the encapsulation layer in the height direction, and a first circuit layer and a second circuit layer over and under the encapsulation layer. The second circuit layer includes a second conductive circuit and a heat dissipation circuit, the first circuit layer and the second conductive circuit are connected conductively through the conductive copper pillar layer, the heat dissipation circuit is connected to one side of the device through the copper boss and the base, and the first circuit layer is connected to the other side of the device.

The present application provides a film containing: a compound (A) containing at least one selected from the group consisting of a maleimide compound and a citraconimide compound; an organic peroxide (B) containing at least one selected from the group consisting of organic peroxides represented by specific formulae; and a hydroperoxide (C).

Embodiments described herein may be related to apparatuses, processes, and techniques directed to a protective coating for an edge of a glass layer, in particular a glass core within a substrate of a package, where the protective coating serves to protect the edge of the glass core and fill in cracks at the edges of the glass. This protective coating will decrease cracking during stresses applied to the glass layer during manufacturing or operation. Other embodiments may be described and/or claimed.

An electronic device comprises a mold layer that includes multiple integrated circuit (IC) dice having contact pads, a glass core patch embedded in encapsulating material that surrounds the top, bottom, and sides of the glass core patch, and a first redistribution layer arranged between the first mold layer and the glass core patch. The first redistribution layer includes electrically conductive interconnect that electrically connects one or more contact pads of the IC dice to the glass core patch.

A flip chip package unit and associated packaging method. The flip chip package unit may include an integrated circuit (“IC”) die having a plurality of metal pillars formed on its first surface and attached to a rewiring substrate with the first surface of the IC die facing to the rewiring substrate, an under-fill material filling gaps between the first surface of the IC die and the rewiring substrate, and a back protective film attached to a second surface of the IC die. The back protective film may have good UV sensitivity to change from non-solid to solid after UV irradiation while maintaining its viscosity with the IC die not reduced after UV irradiation. The back protective film may be uneasy to deform and to peel off from the IC die and can provide physical protection and effective heat dissipation path to the IC die.

The present disclosure describes a structure with a controlled polyimide profile and a method for forming such a structure. The method includes depositing, on a substrate, a photoresist containing polyimide and performing a first anneal at a first temperature. The method further includes exposing the photoresist to a radiation source through a photomask having a pattern associated with a shape of a polyimide opening. The method further includes performing a second anneal at a second temperature and removing a portion of the photoresist to form the polyimide opening. The method further includes performing a third anneal at a third temperature and cleaning the polyimide opening by ashing.